Abstract: The invention provides a method for fabricating a semiconductor device comprising the steps of: forming an insulating layer on a semiconductor substrate; selectively forming an oxidation preventive film on the surface of said insulating layer; depositing polycrystalline silicon on the entire surface of said substrate including said oxidation preventive film; selectively etching said polycrystalline silicon so as to leave said polycrystalline silicon only around the sides of said oxidation preventive film by an etching method having a directivity perpendicular to the surface of said substrate; ion-implanting an impurity for preventing inversion in said substrate using as a mask said oxidation preventive film and said polycrystalline silicon remaining therearound; and forming a field insulator film including an oxide of said polycrystalline silicon by oxidizing the surface of said substrate. A higher integration and a higher reliability of elements may be attained according to the method of the invention.

Abstract: A suction air volume detecting means to be provided in a suction system in an engine, in particular an automotive engine to electrically detect the air volume to be sucked into the engine is mounted within a suction air expansion chamber of the suction system provided to reduce the pulsation of the suctioned air for the purpose that the electrical circuit elements of the suction air volume detecting means, in particular, transistors, etc. are protected from being heated by heat radiated from the engine and from being caused to misoperate by external electrical waves.

Abstract: An information recording medium comprises a silicon substrate, a silicon dioxide film formed on one principal surface of the semiconductor substrate and a silicon nitride film formed on the silicon dioxide film. A recording electrode stylus is moved relative to and along the surface of the silicon nitride film while applying a recording signal voltage between the stylus and substrate, thus causing charges corresponding to the recording signal voltage to be passed through the silicon dioxide film by the tunnel effect and stored in the silicon nitride film.

Abstract: A fuel feed device for an engine comprises an electric control to control opening and closing of a fuel injection valve in accordance with electric signals output from an operating condition detector prior to the electric signals from an air flow rate detecting device, when the engine is operated under a specific driving condition such as a low speed and high load driving condition. Another electric control can control opening and closing of the fuel injection valve in accordance with the electric signal output from the air flow rate detecting device when the engine is under other driving conditions, so that the present invention has the advantage that highly reliable electronically controlled fuel feed is effected.

Abstract: A method for manufacturing semiconductor integrated circuits such as metal oxide semiconductor field effect transistors having source and drain regions to which contact holes are made such that not only the contact parts of the source and the drain regions, but also both surface parts of a field oxide layer which are adjacent to the outer edges of source and drain regions, are exposed and contacted.

Abstract: A fuel feed device for an engine capable of electronically controlling the fuel feed rate corresponding to the suction air flow rate in the intake passage, comprising an air flow rate detecting device for generating electric signals of frequencies proportional to suction air rate, a plurality of electromagnetic valves with a different fuel passage section from one another disposed at a suitable position in the intake passage and adapted so as to permit supplying through a fuel pressure regulator the fuel of a fixed pressure differential with the suction pressure near a fuel outlet, and an electric control means for driving the electromagnetic valves selectively in synchronism with or to follow the frequency of the electric signals or a divided frequency thereof in accordance with the engine operating condition. Thus an accurate and highly reliable fuel supply is achieved over a wide range of engine operating condition from idling to maximum speed operation.

Abstract: A fuel feed device for an engine capable of electronically controlling the fuel feed rate corresponding to the suction air flow rate in the intake passage, comprising an air flow rate detecting device for generating electric signals of frequencies proportional to suction air rate, a plurality of electromagnetic valves disposed at a suitable position in the intake passage and adapted so as to permit supplying through a fuel pressure regulator the fuel of a fixed pressure differential with the suction pressure near a fuel outlet, and an electric control means for driving the electromagnetic valves with a shifted phase with one another to control the respective opening times thereof in accordance with the engine operating condition. Thus the accurate and highly reliable fuel supply is achieved over the wide range of engine operating condition from the idling to the maximum speed operation.

Abstract: A non-volatile semiconductor memory device includes source and drain regions formed on a semiconductor substrate to define p-n junctions with the substrate and a gate layer having a silicon oxide film and a silicon nitride film. A high impurity concentration diffusion layers are formed around at least one of the source and drain regions, which have the same conductivity type as the substrate, an impurity concentration of above 10.sup.17 atoms cm.sup.-.sup.3 and a width of below 1 .mu.m.