Abstract: Using a switching signal from a coarse/fine switching and operation mode switching circuit, the width of change of a counter control value during power up is increased, and the width of change is reduced once a steady state is reached. In the steady state, the frequency of updating is limited by a control signal from an update permit control circuit. In the steady state, the frequency band of a current source in an LD driving circuit is reduced in width.

Abstract: A terminal A which is an owner of contents transmits a request to share contents downloaded from a contents provider with terminals B and C to an ASP. The ASP obtains permission that a license can be shared from the contents provider, and notifies the terminal A of the information. The ASP calls the terminals B and C and provides the license for them.

Abstract: A mobile information terminal communicates with a terminal of another party by utilizing a prescribed network from among a plurality of networks. During communication with the other party by utilizing a first network, another network or deterioration of reception conditions is detected. When another network or deterioration of reception conditions is detected, a server system automatically selects a network for continuing communication (i.e., an ASP makes the selection automatically) or presents recommended networks on a display unit of the mobile information terminal so that the network for continuing communication may be selected on the side of the mobile information terminal and reported to the server system (i.e., the user makes the selection). Communication is continued via the selected network under the control of the server system.

Abstract: When a service requested by a user is provided by communication, a mapping unit uses a prescribed function to map (convert) information that has been entered the auser in order that the user may receive provision of service, or information that has been gathered or acquired in the course of execution of a call connection or communication service. A service generating unit, which generates a service for the user, generates added value (e.g., content) based upon the result of mapping, applies this added value to the service requested by the user and provides the service to the user. Alternatively, on the basis of a converted value obtained, a modification is applied to a service provided by an information provider or to the specifics of the service, and the modified service is supplied to the user.

Abstract: There is provided a semiconductor device structured so as to be mounted jointly with other devices on one chip, and capable of controlling a large current in spite of a small device area while having small on-resistance, thereby enabling a high voltage resistance to be obtained. In the case of NLDMOS, the semiconductor device comprises an N well layer, formed on a p-type semiconductor substrate, a P well layer formed in the N well layer, a source electrode formed in a source trench cavity within the P well layer, a gate electrode formed in at least one of gate trench cavities within the P well layer, through the intermediary of an oxide film, and a drain electrode formed in a drain trench cavity within the N well layer, and further, N+ diffused layers are formed, around the source trench cavity, the drain trench cavity, respectively.

Abstract: There is provided a semiconductor device structured so as to be mounted jointly with other devices on one chip, and capable of controlling a large current in spite of a small device area while having small on-resistance, thereby enabling a high voltage resistance to be obtained. In the case of NLDMOS, the semiconductor device comprises an N well layer, formed on a p-type semiconductor substrate, a P well layer formed in the N well layer, a source electrode formed in a source trench cavity within the P well layer, a gate electrode formed in at least one of gate trench cavities within the P well layer, through the intermediary of an oxide film, and a drain electrode formed in a drain trench cavity within the N well layer, and further, N+ diffused layers are formed around the source trench cavity, the drain trench cavity, respectively.

Abstract: An information provider instructs a server system of an information distribution region and attributes of service users, monitors, based upon position information from service users, the state of distribution of service users who have the above-mentioned attributes and are present in the information distribution region designated by the information provider, and distributes prescribed information to mobile information terminals of the service users based upon the state of distribution of the service users.

Abstract: In an information distribution service system comprising a plurality of mobile information terminals, a computer system and a plurality of information-provider terminals, the computer system is provided with a user-information database for registration information categories provided for the mobile information terminals' users each serving as a recipient of an information distribution service rendered by the information distribution service system, an information-provider database for registering locations of the information-provider terminals and information to be distributed by the information-provider terminals as notifications, and a location management unit provided for the purpose of inferring changes in location of each mobile information terminal in a time series by using an inference formula provided in advance for predicting the particular mobile information terminal's moving direction and location on the basis of information on locations of the particular mobile information terminal, and the purpos

Abstract: A light output control circuit to update light output synchronously with input data in burst signal transmission system is disclosed. The circuit has a function of issuing light deterioration warning unerringly, which includes: a monitoring portion to detect light output emitted from a light emission element driven in accordance with transmission data; a level comparator to compare a monitoring signal outputted from the monitoring portion with a reference signal; a data detection portion to detect the existence of the transmission data; and an output controller to determine whether a light output deterioration warning is to be issued using an output signal of the data detection portion and an output signal of the level comparator.

Abstract: To present a SOI type MOS element excellent in yield, performance and characteristic, easy in manufacture, and low in cost, and a method of manufacturing the same. A SOI type MOS transistor structure comprising polysilicon electrodes 128 for gate, source and drain composed by burying into trench holes 120a, 120b, 120c respectively formed in a semiconductor substrate 110, a gate oxide film 122 formed in the entire inside of the trench hole 120a, N− diffusion layer 124 and N+ diffusion layer 126 formed in the entire inside of the trench holes 120b and 120c, and a thick SiO2 film 114 in a trench hole 113 formed in the semiconductor substrate 110 so as to surround the transistor.

Abstract: A power MOS transistor that permits a large current to flow without a broad gate width being employed. The power MOS transistor includes a substrate of a first conductivity type; a well region of a second conductivity type; a first electrode region whose impurity concentration is higher than the well region; a region of a first conductivity type; and a second electrode region. The first electrode region, first-conductivity-type region and second electrode region are respectively arranged in this order spaced apart from one another in a first direction. The first-conductivity-type region includes a plurality of first-conductivity-type sub-regions, which are provided spaced apart from one another in a second direction that is orthogonal to the first direction. A surface channel region is formed between adjacent first-conductivity-type sub-regions.

Abstract: To present a SOI type MOS element excellent in yield, performance and characteristic, easy in manufacture, and low in cost, and a method of manufacturing the same. A SOI type MOS transistor structure comprising polysilicon electrodes 128 for gate, source and drain composed by burying into trench holes 120a, 120b, 120c respectively formed in a semiconductor substrate 110, a gate oxide film 122 formed in the entire inside of the trench hole 120a, N− diffusion layer 124 and N+ diffusion layer 126 formed in the entire inside of the trench holes 120b and 120c, and a thick SiO2 film 114 in a trench hole 113 formed in the semiconductor substrate 110 so as to surround the transistor.

Abstract: A Web site access service control apparatus as a computer system includes a module for transmitting a content menu of a Web site provided by a non-contract common carrier of a user to a communications terminal of the user in response to a request given from the user via the communications terminal, a module for obtaining content data corresponding to the content menu of the non-contract common carrier selected by the user, and transmitting the content data to the communications terminal, a module for transmitting, to the communications terminal of the user, a menu in which the non-contact common carrier is arbitrarily selected corresponding to the contract-common carrier of the user, and a module for converting display data in accordance with an attribute of the communications terminal of the user.

Abstract: An electronic commerce server enables an orderer to given an order of purchasing a commercial article at a virtual shop existing on a network by accessing the virtual shop from a communication terminal used by the orderer, and to receive the purchase target article at an agency service trader's place other than the home. This server includes a receiving unit receiving from the virtual shop apiece of order information of the purchase target article and a piece of information for specifying a desired agency service trader's place for receiving the purchase target article, of which respective notifications are given via the communication terminal used by the orderer, an issuing unit issuing a piece of identification information unique to both of every orderer and every purchase target article on the basis of the order information, and a confirmation unit confirming the identification information received by the communication terminal used by the orderer through the agency service trader's place.

Abstract: To present a SOI type MOS element excellent in yield, performance and characteristic, easy in manufacture, and low in cost, and a method of manufacturing the same. A SOI type MOS transistor structure comprising polysilicon electrodes 128 for gate, source and drain composed by burying into trench holes 120a, 120b, 120c respectively formed in a semiconductor substrate 110, a gate oxide film 122 formed in the entire inside of the trench hole 120a, N-diffusion layer 124 and N+ diffusion layer 126 formed in the entire inside of the trench holes 120b and 120c, and a thick SiO2 film 114 in a trench hole 113 formed in the semiconductor substrate 110 so as to surround the transistor.

Abstract: The present invention relates to a power MOS transistor that permits a large current to flow without a broad gate width being employed. A power MOS transistor of this kind comprises a substrate of a first conductivity type; a well region of a second conductivity type; a first electrode region whose impurity concentration is higher than that of the well region; a region of a first conductivity type; and a second electrode region. The first electrode region, first-conductivity-type region and second electrode region are respectively arranged in this order so as to be spaced apart from one another in a first direction. The first-conductivity-type region is constituted by a plurality of first-conductivity-type sub-regions, which are provided so as to be spaced apart from one another in a second direction that is orthogonal to the first direction. A surface channel region is formed between adjacent first-conductivity-type sub-regions.

Abstract: A server stores terminal information including an address of each terminal device belonging to a group constituted by a plurality of terminal devices. The server receives, from a terminal device belonging to the group, a distribution request including access information and distribution destination information. The server accesses the distribution information based on the access information, and receives the distribution information. The server specifies an address of a distribution destination terminal device based on the distribution destination information, and distributes the received distribution information to the destination terminal device.

Abstract: The server system comprises a data base for storing the information of a specific area where the information distribution service is provided to registered users of the portable mobile information terminals, the prepared information to be distributed and the distribution conditions thereof provided by a sponsor, and each registered user and the conditions for receiving the prepared information. The position information is received from a portable mobile information terminal, and it is determined whether the portable mobile information terminal is located in the specific area and, in the case where the portable mobile information terminal is located in the specific area, individual and specific information satisfying both the distribution conditions and the receiving conditions are distributed to the particular portable mobile information terminal.

Abstract: To present a SOI type MOS element excellent in yield, performance and characteristic, easy in manufacture, and low in cost, and a method of manufacturing the same. A SOI type MOS transistor structure comprising polysilicon electrodes 128 for gate, source and drain composed by burying into trench holes 120a, 120b, 120c respectively formed in a semiconductor substrate 110, a gate oxide film 122 formed in the entire inside of the trench hole 120a, N-diffusion layer 124 and N+ diffusion layer 126 formed in the entire inside of the trench holes 120b and 120c, and a thick SiO2 film 114 in a trench hole 113 formed in the semiconductor substrate 110 so as to surround the transistor.

Abstract: At a portion below a gate electrode of a vertical type MOS transistor having a gate electrode and source electrodes formed over the surface of a semiconductor substrate and a drain electrode formed over the back thereof, a P type impurity diffusion layer spaced away from P well diffusion layers which surround sources, is formed in the semiconductor substrate which serves as a drain region.