Abstract: Provided are a novel method for manufacturing a stack of carbon nanotube and graphene that can improve a capacitor characteristic, an electrode material including the stack of carbon nanotube and graphene, and an electric double-layer capacitor using the same. A method for manufacturing a stack of graphene and carbon nanotube includes a step of dispersing the graphene in an aqueous MOH solution (M represents an element selected from a group consisting of Li, Na, and K) to adsorb MOH on the graphene, a step of heating the graphene with MOH adsorbed thereon that is obtained in the adsorption step in vacuum or in an inert atmosphere in a temperature range of 400° C. or more and 900° C. or less to form pores in the graphene, and a step of dispersing the carbon nanotube and the graphene with the pores that are obtained in the step of forming the pores in a dispersion medium to stack the carbon nanotube and the graphene with the pores.

Abstract: The problem addressed by the present invention is to provide an apparatus for preparing ultrathin graphene pieces capable of preparing ultrathin graphene pieces in which less than 10 pieces of graphene are overlapped in large quantities, a method for preparing ultrathin graphene pieces capable of preparing the ultrathin graphene pieces with high yield, an ultrathin graphene piece in which less than 10 pieces of graphene are overlapped, a capacitor having high performance by using the ultrathin graphene piece as an electrode, and an efficient method of manufacturing the capacitor.

Abstract: Provided are a novel method for manufacturing a stack of carbon nanotube and graphene that can improve a capacitor characteristic, an electrode material including the stack of carbon nanotube and graphene, and an electric double-layer capacitor using the same. A method for manufacturing a stack of graphene and carbon nanotube includes a step of dispersing the graphene in an aqueous MOH solution (M represents an element selected from a group consisting of Li, Na, and K) to adsorb MOH on the graphene, a step of heating the graphene with MOH adsorbed thereon that is obtained in the adsorption step in vacuum or in an inert atmosphere in a temperature range of 400° C. or more and 900° C. or less to form pores in the graphene, and a step of dispersing the carbon nanotube and the graphene with the pores that are obtained in the step of forming the pores in a dispersion medium to stack the carbon nanotube and the graphene with the pores.

Abstract: The problem addressed by the present invention is to provide an apparatus for preparing ultrathin graphene pieces capable of preparing ultrathin graphene pieces in which less than 10 pieces of graphene are overlapped in large quantities, a method for preparing ultrathin graphene pieces capable of preparing the ultrathin graphene pieces with high yield, an ultrathin graphene piece in which less than 10 pieces of graphene are overlapped, a capacitor having high performance by using the ultrathin graphene piece as an electrode, and an efficient method of manufacturing the capacitor.

Abstract: The object of the present invention is to provide linked stacks of reduced graphene, in which excellent electrical property on the surface of graphene may be utilized, a method for producing the same, powder comprising the same, and film comprising the same. The object may be solved by using linked stacks of partly reduced graphene 11 comprising two or more stacks of partly reduced graphene 21 to 24 linked together, in which the stack of partly reduced graphene 21 has two or more sheets of partly reduced graphene 31 and a nanosubstance 32 held between the sheets of partly reduced graphene 31, the partly reduced graphene 31 has no carbonyl groups and has carboxyl groups 31a and hydroxyl groups 31b, and different stacks of partly reduced graphene 21 to 24 are linked to each other by an ester bond 34.

Abstract: The problem addressed by the present invention is to provide an apparatus for preparing ultrathin graphene pieces capable of preparing ultrathin graphene pieces in which less than 10 pieces of graphene are overlapped in large quantities, a method for preparing ultrathin graphene pieces capable of preparing the ultrathin graphene pieces with high yield, an ultrathin graphene piece in which less than 10 pieces of graphene are overlapped, a capacitor having high performance by using the ultrathin graphene piece as an electrode, and an efficient method of manufacturing the capacitor.

Abstract: The object of the present invention is to provide linked stacks of reduced graphene, in which excellent electrical property on the surface of graphene may be utilized, a method for producing the same, powder comprising the same, and film comprising the same. The object may be solved by using linked stacks of partly reduced graphene 11 comprising two or more stacks of partly reduced graphene 21 to 24 linked together, in which the stack of partly reduced graphene 21 has two or more sheets of partly reduced graphene 31 and a nanosubstance 32 held between the sheets of partly reduced graphene 31, the partly reduced graphene 31 has no carbonyl groups and has carboxyl groups 31a and hydroxyl groups 31b, and different stacks of partly reduced graphene 21 to 24 are linked to each other by an ester bond 34.

Abstract: A metal hexaboride nanowire such as LaB6 with the formed metal-terminated (100) plane at the tip has a small work function, and can emit a very narrow electron beam from the (100) plane. In such emitters, contamination occurs in a very short time period, and the output current greatly decreases when used under low temperature. The cold field emitter of the present invention overcomes this problem with a stabilization process that exposes the metal-terminated (100) plane of the tip to hydrogen at low temperature, and can stably operate over extended time periods.

Abstract: A graphene sheet film as a film-like assembly of two or more graphene sheets 11 to 25 is provided. The graphene sheet film uses a graphene sheet assembly 101 that includes: first carbon nanotubes 31 to 48 that join the graphene sheets 11 to 25 to each other and form graphene sheet laminates 61 to 65 in which the graphene sheets 11 to 25 are laminated with the sheet planes being paralleled to each other; and second carbon nanotubes 51 to 56 that connect the graphene sheet laminates 61 to 65 to each other. This makes it possible to provide a graphene sheet film having high capacitor performance with respect to energy density and output density, a method for producing the same, and a graphene sheet capacitor using such graphene sheet films.

Abstract: A process for arranging a number of micro-bodies efficiently and precisely as one on one spot on a substrate. Charged spots are formed by a converging ion beam or the like on a substrate having an insulating property or the like, and micro-bodies having a size of 200 microns or less are attracted and stuck to the charged spots.

Abstract: A process for arranging a number of micro-bodies efficiently and precisely as one on one spot on a substrate. Charged spots are formed by a converging ion beam or the like on a substrate having an insulating property or the like, and micro-bodies having a size of 200 microns or less are attracted and stuck to the charged spots.

Abstract: The present invention provides a thermomechanical treatment means for a Fe—Mn—Si-based shape memory alloy having specified components with Nb, C addition with simple deformation prior to aging. Such deformation treatment prior to aging is carried out in the inventions of the prior applications in a temperature range of from 500° C. to 800° C. According to the present invention, however, the deformation treatment prior to the aging treatment can be successfully carried out not at high temperature but at room temperature, if the deformation ratio is in a specified range. The technical meaning of the present invention must be clearly understood as compared to the prior art and the inventions of the prior applications because the present invention allows the treatment at room temperature while the others require troublesome treatment at high temperature so that there is significant difference therebetween.

Abstract: A process for arranging a number of micro-bodies efficiently and precisely as one on one spot on a substrate. Charged spots are formed by a converging ion beam or the like on a substrate having an insulating property or the like, and micro-bodies having a size of 200 microns or less are attracted and stuck to the charged spots.

Abstract: A NbC-added Fe—Mn—Si-based shape memory alloy is provided, showing a shape memory property even if a special treatment such as training is not performed. A Fe—Mn—Si-based shape memory alloy containing Nb and C is rolled by 10 to 30% in a temperature range of 500 to 800° C. under austenite condition, then, subjected to an aging treatment by heating in a temperature range of 400 to 1000° C. for 1 minute to 2 hours.

Abstract: A NbC-added Fe—Mn—Si-based shape memory alloy is provided, showing a shape memory property even if a special treatment such as training is not performed.

Abstract: A process for arranging a number of micro-bodies efficiently and precisely as one on one spot on a substrate.

Abstract: A novel patterned thin film forming method is capable of realizing formation of nanometer-scale patterned thin films with high controllability by an easy and low-cost process. To form a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, an electric charge pattern is formed on the insulating substrate, and then the insulating substrate is dipped in the precursor solution to deposit the film-forming substance on the electric charge pattern formed on the insulating substrate.

Abstract: A novel shape memory alloy of Fe—Mn—Si system containing at least Fe, Mn, and Si wherein the alloy contains niobium carbide in the structure and is improved in that a sufficiently satisfactory shape memory effect is provided without carrying out a special treatment termed training.

Abstract: A novel patterned thin film forming method is capable of realizing formation of nanometer-scale patterned thin films with high controllability by an easy and low-cost process. To form a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, an electric charge pattern is formed on the insulating substrate, and then the insulating substrate is dipped in the precursor solution to deposit the film-forming substance on the electric charge pattern formed on the insulating substrate.

Abstract: A process for arranging a number of micro-bodies efficiently and precisely as one on one spot on a substrate.