Abstract: In a method for fabricating a semiconductor device, interconnect grooves are formed in an insulating film on a substrate, and then a copper film is formed on the insulating film to fill the interconnect grooves. Subsequently, portions of the copper film existing outside the interconnect grooves are polished to form interconnects, and then a cleaning process is performed on the resulting substrate. Thereafter, moisture remaining around a portion of the insulating film exposed between the interconnects is removed in a vacuum.

Abstract: The method of fabricating a semiconductor device according to the present invention is applied to a semiconductor device fabricated by forming a seed film in recesses formed in an interlayer film and forming a thick film embedded in the recesses by electrolytic plating using the seed film as an electrode. In this fabrication method, the maximum length of time until the electrolytic plating is started after the completion of the seed film is limited based on the formation of the seed film in the recesses. The maximum time is reduced as the recesses have higher aspect ratios, preventing a void from being formed in the recesses during the plating, thereby obtaining highly reliable wiring.

Abstract: An apparatus for manufacturing a semiconductor device performs wet cleaning of a semiconductor wafer in a cleaning chamber, transfer of the wet-cleaned semiconductor wafer into a drying chamber and drying of the semiconductor wafer in the drying chamber. The apparatus includes an atmosphere control means for controlling the atmosphere near the surface of the semiconductor wafer by introducing liquid inert gas onto the surface of the semiconductor wafer which has been wet-cleaned in the cleaning chamber and a transfer means for transferring the semiconductor wafer into the drying chamber in the atmosphere controlled by the atmosphere control means. The atmosphere control means introduces the liquid inert gas such that the surface of the semiconductor wafer is covered with the liquid inert gas and evaporated liquid inert gas.

Abstract: A local cleaning system comprises a plurality of transport rails arranged below a ceiling of a clean room to form a grid, and a self-traveling fan filter unit that can be moved along the transport rails. The self-traveling fan filter unit is moved to a predetermined region of the clean room using the transport rails, thereby forming a locally cleaned region having a higher cleanliness level than a region of the clean room excluding the predetermined region.

Abstract: A stocker for semiconductor substrates comprises a container that is for containing the semiconductor substrates and composed of a casing having an open side and a removable lid for sealing the casing at the open side, an atmosphere control unit having a cavity through which a clean gas is passed to keep the inside pressure higher than the outside atmospheric pressure and a gas supply system for supplying the gas to the cavity, and a loadport for connecting the cavity with the container to prevent outside air from entering into the inside of the container. The loadport comprises a port door and a lid placement/removing unit. The lid placement/removing unit is configured to remove the lid from the container into communication between the cavity and the container, thereby allowing the inside of the container to have the same atmosphere as the cavity.

Abstract: In a method for fabricating a semiconductor device, interconnect grooves are formed in an insulating film on a substrate, and then a copper film is formed on the insulating film to fill the interconnect grooves. Subsequently, portions of the copper film existing outside the interconnect grooves are polished to form interconnects, and then a cleaning process is performed on the resulting substrate. Thereafter, moisture remaining around a portion of the insulating film exposed between the interconnects is removed in a vacuum.