Abstract: A light-emitting system includes an optical fiber, a first light source unit, a second light source unit, and a light-guiding member. The optical fiber includes a wavelength-converting portion containing a wavelength-converting element. The wavelength-converting element may be excited by excitation light to produce a spontaneous emission of light having a longer wavelength than the excitation light and may also be excited by an amplified spontaneous emission of light. The first light source unit makes the excitation light incident on the optical fiber. The second light source unit makes seed light, causing the wavelength-converting element that has been excited by either the excitation light or the amplified spontaneous emission of light to produce a stimulated emission of light, incident on the optical fiber. The light-guiding member guides the light coming from the optical fiber and lets the light emerge therefrom.

Abstract: A projection system includes a light source unit, a spatial light modulation unit, and a projection optical system. Light source unit includes an optical fiber, a first light source part, and a second light source part. Optical fiber includes a light incident portion, a light emerging portion and a wavelength-converting portion. Wavelength-converting portion is disposed between light incident portion and light emerging portion. Wavelength-converting portion includes wavelength-converting elements. Wavelength-converting elements are able to be excited by excitation light to produce spontaneous emission of light having a longer wavelength than excitation light, and also excited by amplified spontaneous emission of light. First light source part makes excitation light incident on light incident portion. Second light source part makes seed light incident on light incident portion.

Abstract: In a lighting system an optical fiber includes a light incident portion, a light emerging portion, and a wavelength-converting portion. The wavelength-converting portion is provided between the light incident portion and the light emerging portion. The wavelength-converting portion contains a wavelength-converting element which is excited by excitation light and amplifies a spontaneous emission of light, having a longer wavelength than the excitation light, with an amplified spontaneous emission of light. A first light source unit makes the excitation light incident on the light incident portion. A second light source unit makes seed light, which causes the wavelength-converting element excited by the excitation light and the amplified spontaneous emission of light to produce a stimulated emission of light, incident on the light incident portion. A lighting unit, into an external space, light emerging from the light emerging portion of the optical fiber.

Abstract: A light-emitting system includes an optical fiber, a first light source unit, a second light source unit, and a light-guiding member. The optical fiber includes a wavelength-converting portion containing a wavelength-converting element. The wavelength-converting element may be excited by excitation light to produce a spontaneous emission of light having a longer wavelength than the excitation light and may also be excited by an amplified spontaneous emission of light. The first light source unit makes the excitation light incident on the optical fiber. The second light source unit makes seed light, causing the wavelength-converting element that has been excited by either the excitation light or the amplified spontaneous emission of light to produce a stimulated emission of light, incident on the optical fiber. The light-guiding member guides the light coming from the optical fiber and lets the light emerge therefrom.

Abstract: An operation switch includes: a capacitance sensor that generates three or more detection signals in response to approach or contact of an object to respective three or more electrodes; a determination circuit that determines whether or not the object is a living body based on one or more detection signals selected from the three or more detection signals, the one or more detection signals excluding a detection signal having a maximum intensity among the three or more detection signals; and a controller that, when the object is determined to be a living body, generates an operation signal for operating a predetermined device.

Abstract: An operation switch includes: a capacitance sensor that generates three or more detection signals in response to approach or contact of an object to respective three or more electrodes; a determination circuit that determines whether or not the object is a living body based on one or more detection signals selected from the three or more detection signals, the one or more detection signals excluding a detection signal having a maximum intensity among the three or more detection signals; and a controller that, when the object is determined to be a living body, generates an operation signal for operating a predetermined device.

Abstract: A control switch for controlling a level of an operation of an apparatus among operating levels including first, second, and third operating levels includes: sensors each of which, in operation, senses an object, the sensors including first, second, and third sensors arranged along one direction, the first, second, and third sensors being assigned first, second, and third level values, respectively; an acquisition circuit that, in operation, acquires a moving velocity of the object along the direction with the first, second, and third sensors; a change circuit that, in operation, changes at least two of the first, second, and third level values according to the moving velocity; and a control circuit that, in operation, causes the apparatus to operate at an operating level corresponding to the level value assigned to one of the first, second, and third sensors which has sensed the object.

Abstract: A control switch for controlling a level of an operation of an apparatus among operating levels including first, second, and third operating levels includes: sensors each of which, in operation, senses an object, the sensors including first, second, and third sensors arranged along one direction, the first, second, and third sensors being assigned first, second, and third level values, respectively; an acquisition circuit that, in operation, acquires a moving velocity of the object along the direction with the first, second, and third sensors; a change circuit that, in operation, changes at least two of the first, second, and third level values according to the moving velocity; and a control circuit that, in operation, causes the apparatus to operate at an operating level corresponding to the level value assigned to one of the first, second, and third sensors which has sensed the object.

Abstract: A thin film transistor according to the present disclosure including: a gate electrode above a substrate; a gate insulating layer covering the gate electrode; a semiconductor layer above the gate insulating layer; and a source electrode and a drain electrode which are above the gate insulating layer, and electrically connected to the semiconductor layer, in which the gate insulating layer includes a first area and a second area, the first area being above the gate electrode, the second area being different from an area above the gate electrode, and made of a same substance as the first area, and the first area has a higher density than a density of the second area.

Abstract: In a method for producing a display panel, a base substrate having an upper surface on which an electrode is located is prepared. A first layer having a first opening overlapping with the electrode in plan-view is formed on the base substrate. A second layer having a second opening overlapping with the first opening in plan-view is formed on the first layer. The second opening has a smaller area than the first opening in plan-view. A wiring layer is formed in the first opening and the second opening, in contact with the electrode. The second layer includes a portion located on an upper surface of the first layer and a portion located in the first opening. The portion of the second layer located in the first opening covers an internal side surface of the first layer located around the first opening.

Abstract: A method of manufacturing a display panel includes a sub-step of forming a photosensitive material layer for formation of a second layer on a first layer, a sub-step of disposing, over the photosensitive material layer, a photomask having a different degree of transparency in a first region and a second region thereof, the first region overlapping the photosensitive material layer, in plan view, at a location for formation of a second aperture, and the second region being a remainder of the photomask other than the first region, and a sub-step of exposing the photosensitive material layer via the photomask. In plan view, the area of the first region in the photomask is larger than the area of a first aperture in the first layer.

Abstract: In a method for producing a display panel, a base substrate having an upper surface on which an electrode is located is prepared. A first layer having a first opening overlapping with the electrode in plan-view is formed on the base substrate. A second layer having a second opening overlapping with the first opening in plan-view is formed on the first layer. The second opening has a smaller area than the first opening in plan-view. A wiring layer is formed in the first opening and the second opening, in contact with the electrode. The second layer includes a portion located on an upper surface of the first layer and a portion located in the first opening. The portion of the second layer located in the first opening covers an internal side surface of the first layer located around the first opening.

Abstract: A thin film transistor according to the present disclosure including: a gate electrode above a substrate; a gate insulating layer covering the gate electrode; a semiconductor layer above the gate insulating layer; and a source electrode and a drain electrode which are above the gate insulating layer, and electrically connected to the semiconductor layer, in which the gate insulating layer includes a first area and a second area, the first area being above the gate electrode, the second area being different from an area above the gate electrode, and made of a same substance as the first area, and the first area has a higher density than a density of the second area.

Abstract: A nanowire transistor according to the present invention includes: at least one nanowire 13 including a core portion 13a that functions as a channel region and an insulating shell portion 13b that covers the surface of the core portion 13a; source and drain electrodes 14 and 15, which are connected to the nanowire 13; and a gate electrode 21 for controlling conductivity in at least a part of the core portion 13a of the nanowire 13. The core portion 13a is made of semiconductor single crystals including Si and has a cross section with a curved profile on a plane that intersects with the longitudinal axis thereof. The insulating shell portion 13b is made of an insulator including Si and functions as at least a portion of a gate insulating film.

Abstract: A nanowire transistor according to the present invention includes: at least one nanowire 13 including a core portion 13a that functions as a channel region and an insulating shell portion 13b that covers the surface of the core portion 13a; source and drain electrodes 14 and 15, which are connected to the nanowire 13; and a gate electrode 21 for controlling conductivity in at least a part of the core portion 13a of the nanowire 13. The core portion 13a is made of semiconductor single crystals including Si and has a cross section with a curved profile on a plane that intersects with the longitudinal axis thereof. The insulating shell portion 13b is made of an insulator including Si and functions as at least a portion of a gate insulating film.

Abstract: In a display apparatus according to the present invention, a pixel is driven by using a thin film transistor (10) including an organic material in at least an active layer. The thin film transistor unit (10) and a display element unit (20) are laminated on a substrate (11) in this order, and a pixel electrode (15) formed on a substrate (10) side of the display element unit (20) also functions as a drain electrode of the thin film transistor (10). Therefore, when an organic material is used for a transistor for driving a display apparatus, there is provided a display apparatus that can provide effective protection without increasing the number of constituent members.

Abstract: A field effect transistor according to the present invention has a semiconductor layer through which carriers injected from a source region travel toward a drain region, the semiconductor layer being formed from a composite material including an organic semiconductor material and nanotubes. The nanotubes may be nanotubes including plural ones joined with each other.

Abstract: An organic thin film transistor of the present invention includes a substrate (11) and a semiconductor layer (14) made of an organic semiconductor and formed on the substrate (11). The semiconductor layer (14) is composed of crystals of the organic semiconductor, and a crystal phase of the crystals is the same as a crystal phase of energetically most stable bulk crystals of the organic semiconductor. A method for manufacturing the organic thin film transistor of the present invention includes forming the semiconductor layer (14) by depositing an organic semiconductor on the substrate (11). The organic semiconductor is deposited at a deposition rate of 0.1 to 1 nm/min while maintaining the temperature of the substrate (11) in the range of 40 to 150° C.

Abstract: A thin-film transistor (100) of the present invention comprises a semiconductor layer (4), and a source region (5), a drain region (6), and a gate region (2) which formed on the semiconductor layer to be separated from each other. Said semiconductor layer is made of composite material, and said composite material comprises organic semiconductive material and at least one kind of inorganic material particles dispersed inside the organic semiconductive material.

Abstract: A thin film transistor of the present invention is a thin film transistor (100) having a semiconductor layer (14), a source region (15) and a drain region (16) provided to be isolated from each other so as to mutually oppose the semiconductor layer. The semiconductor layer has ?-conjugated organic semiconductor molecules as its main component. The ?-conjugated organic semiconductor molecules are oriented so that ? orbitals substantially oppose each other and that the molecular axis of the main chains is oriented to be inclined with respect to a direction of electric field in a channel formed in the semiconductor layer.