Abstract: According to one embodiment, a nonvolatile memory device includes a memory cell. The memory cell includes a stacked film structure. The stacked film structure is capable of maintaining a first state or a second state. The first state includes a lower electrode film, a first memory element film provided on the lower electrode film and containing a first oxide and an upper electrode film provided on the first memory element film. The second state includes the lower electrode film, the first memory element film provided on the lower electrode film, a second memory element film provided on the first memory element film and containing a second oxide and the upper electrode film provided on the second memory element film.

Abstract: A phase-change optical recording medium includes a phase-change optical recording film that permits reversible phase change between a crystalline phase and an amorphous phase upon irradiation with light, and an interface film formed of hafnium oxide, or a mixture of hafnium oxide and at least one oxide selected from the group consisting of cerium oxide, titanium oxide and zirconium oxide, and formed in contact with at least one surface of the phase-change optical recording film.

Abstract: There is provided an optical recording medium capable of preventing cross erase and increasing its recording density. The optical recording medium includes: a reflecting film; a first transparent film provided on the reflecting film; a first semitransparent film provided on the first transparent film; a second transparent film provided on the first semitransparent film; a recording film provided on the second transparent film, the recording film being capable of reversibly changing an atomic arrangement; and a third transparent film provided on the recording film. The first semitransparent film has a complex refractive index of n?ik satisfying relationships of 0<n<1 and 1<k, and a product of a thickness d (nm) of the first semitransparent film and an extinction coefficient k of the complex refractive index is d×k?44.

Abstract: There is provided an optical recording medium capable of preventing cross erase and increasing its recording density. The optical recording medium includes: a reflecting film; a first transparent film provided on the reflecting film; a first semitransparent film provided on the first transparent film; a second transparent film provided on the first semitransparent film; a recording film provided on the second transparent film, the recording film being capable of reversibly changing an atomic arrangement; and a third transparent film provided on the recording film. The first semitransparent film has a complex refractive index of n?ik satisfying relationships of 0<n<1 and 1<k, and a product of a thickness d (nm) of the first semitransparent film and an extinction coefficient k of the complex refractive index is d×k?44.

Abstract: There is provided an optical recording medium capable of preventing cross erase and increasing its recording density. The optical recording medium includes: a reflecting film; a first transparent film provided on the reflecting film; a first semitransparent film provided on the first transparent film; a second transparent film provided on the first semitransparent film; a recording film provided on the second transparent film, the recording film being capable of reversibly changing an atomic arrangement; and a third transparent film provided on the recording film. The first semitransparent film has a complex refractive index of n−k satisfying relationships of 0<n<1 and 1<k, and a product of a thickness d (nm) of the first semitransparent film and an extinction coefficient k of the complex refractive index is d×k≦44.

Abstract: A phase-change optical recording medium includes a phase-change optical recording film that permits reversible phase change between a crystalline phase and an amorphous phase upon irradiation with light, and an interface film formed of hafnium oxide, or a mixture of hafnium oxide and at least one oxide selected from the group consisting of cerium oxide, titanium oxide and zirconium oxide, and formed in contact with at least one surface of the phase-change optical recording film.

Abstract: There is provided an optical recording medium capable of preventing cross erase and increasing its recording density. The optical recording medium includes: a reflecting film; a first transparent film provided on the reflecting film; a first semitransparent film provided on the first transparent film; a second transparent film provided on the first semitransparent film; a recording film provided on the second transparent film, the recording film being capable of reversibly changing an atomic arrangement; and a third transparent film provided on the recording film. The first semitransparent film has a complex refractive index of n−k satisfying relationships of 0<n<1 and 1<k, and a product of a thickness d (nm) of the first semitransparent film and an extinction coefficient k of the complex refractive index is d×k≦44.