Abstract: Provided is an electrochemical measurement device capable of measuring more accurately and an electrochemical measurement apparatus provided with the electrochemical measurement device. The electrochemical measurement device includes a base part, and a placement part on which an object to be measured is placed, the placement part being provided to the base part. The electrochemical measurement device also includes an electrode part provided near the placement part on the base part, a wiring part provided on a surface of the base part and electrically connected to the electrode part, and an insulator that covers the wiring part. Further, a protruding part is provided on the base part of the electrochemical measurement device so as to protrude past the insulator.

Abstract: Provided is an electrochemical measurement device capable of measuring more accurately and an electrochemical measurement apparatus provided with the electrochemical measurement device. The electrochemical measurement device includes a base part, and a placement part on which an object to be measured is placed, the placement part being provided to the base part. The electrochemical measurement device also includes an electrode part provided near the placement part on the base part, a wiring part provided on a surface of the base part and electrically connected to the electrode part, and an insulator that covers the wiring part. Further, a protruding part is provided on the base part of the electrochemical measurement device so as to protrude past the insulator.

Abstract: The micro relay of the present invention comprises a base substrate 3, an armature block 5, and a cover 7. The base substrate 3 has a storage recess 41 for accommodating an electromagnetic device 1. The storage recess is composed of a hole 41a penetrating the base substrate 3 and a thin storage recess lid fixed on the one surface of the base substrate to close the hole. The electromagnetic device 1 is isolated from a contact mechanism by the storage recess lid 41b to increase the reliability of the contacts. The electromagnetic device 1 includes a yoke 10, a coil 11 wound around the yoke to generate a flux in response to an exciting current, and a permanent magnet 12 secured to the yoke to generate a flux flowing through an armature 51 and the yoke 10. Because the permanent magnet 12 is secured to the yoke 10, this micro relay can reduce the thickness.

Abstract: The micro relay of the present invention comprises a base substrate 3, an armature block 5, and a cover 7. The base substrate 3 has a storage recess 41 for accommodating an electromagnetic device 1. The storage recess is composed of a hole 41a penetrating the base substrate 3 and a thin storage recess lid fixed on the one surface of the base substrate to close the hole. The electromagnetic device 1 is isolated from a contact mechanism by the storage recess lid 41b to increase the reliability of the contacts. The electromagnetic device 1 includes a yoke 10, a coil 11 wound around the yoke to generate a flux in response to an exciting current, and a permanent magnet 12 secured to the yoke to generate a flux flowing through an armature 51 and the yoke 10. Because the permanent magnet 12 is secured to the yoke 10, this micro relay can reduce the thickness.

Abstract: The semiconductor device is inserted between a power source and a load. A current flowing between an external drain terminal D and an external source terminal S is controlled in accordance with a control voltage applied between an external gate terminal G and the external source terminal S. In addition, the semiconductor device has a main MOSFET 1 and a detecting MOSFET 2 each of which is inserted between the external drain terminal D and the external source terminal S, a protective circuit 3 which protects the main MOSFET 1 by a protective transistor 5 when the abnormality is detected thereby, and an impedance element 4 inserted between the protective MOSFET 5, and a junction connecting the external gate terminal G to a gate electrode of the detecting MOSFET 2.

Abstract: The semiconductor device is inserted between a power source and a load. A current flowing between an external drain terminal D and an external source terminal S is controlled in accordance with a control voltage applied between an external gate terminal G and the external source terminal S. In addition, the semiconductor device has a main MOSFET 1 and a detecting MOSFET 2 each of which is inserted between the external drain terminal D and the external source terminal S, a protective circuit 3 which protects the main MOSFET 1 by a protective transistor 5 when the abnormality is detected thereby, and an impedance element 4 inserted between the protective MOSFET 5, and a junction connecting the external gate terminal G to a gate electrode of the detecting MOSFET 2.

Abstract: A solid state relay circuit includes a MOSFET receiving a photovoltaic output generated across a photovoltaic diode array responsive to a light signal from a light emitting element, a control electrode of a normally ON type driving transistor made to be at a high impedance state by a voltage generated across an impedance element connected in series to the photovoltaic diode array upon application of the photovoltaic output across the gate and source of the MOSFET and at a low impedance state upon disappearance of the photovoltaic output is connected to a connecting point between the diode array and the impedance element, and the driving transistor is connected across the gate and source of the MOSFET with a resistor interposed. A falling gradient of output signal upon being turned OFF of the relay circuit is made thereby sufficiently gentle, and relay operation upon being turned OFF can be minimized in response time.