Abstract: A capacitor is provided that includes an electrostatic capacitance forming portion with a first electrode/dielectric layer/second electrode structure, and a silicon portion. Moreover, the silicon portion is disposed on at least a part of a side of the electrostatic capacitance forming portion. When the capacitor is viewed in a thickness direction thereof, a region occupied by the silicon portion in a lower portion of the electrostatic capacitance forming portion is 50% or less.

Abstract: A method of observing a liquid specimen in an electron microscope includes: housing the liquid specimen in a space formed by a specimen stage and a lid member; and observing the liquid specimen, wherein the lid member includes a water retaining material, and a supporting member for supporting the water retaining material, and the water retaining material is provided with a through-hole that enables passage of an electron beam with which the liquid specimen is irradiated.

Abstract: A wafer level package which includes an IC chip; a rewiring layer on the IC chip; and a capacitor embedded in the rewiring layer.

Abstract: A capacitor having a conductive porous substrate with at least two electrostatic capacitance forming sections, each of the at least two electrostatic capacitance forming sections including a porous portion of the conductive porous substrate, a dielectric layer on the porous portion, and an upper electrode on the dielectric layer. The at least two electrostatic capacitance forming sections are electrically connected in series by the conductive porous substrate.

Abstract: A capacitor that includes a conductive base material with high specific surface area, a dielectric layer covering the conductive base material with high specific surface area, and an upper electrode covering the dielectric layer, in which the conductive base material with high specific surface area is formed of a metal sintered body as a whole.

Abstract: A capacitor is provided that includes an electrostatic capacitance forming portion with a first electrode/dielectric layer/second electrode structure, and a silicon portion. Moreover, the silicon portion is disposed on at least a part of a side of the electrostatic capacitance forming portion. When the capacitor is viewed in a thickness direction thereof, a region occupied by the silicon portion in a lower portion of the electrostatic capacitance forming portion is 50% or less.

Abstract: A method of observing a liquid specimen in an electron microscope includes: housing the liquid specimen in a space formed by a specimen stage and a lid member; and observing the liquid specimen, wherein the lid member includes a water retaining material, and a supporting member for supporting the water retaining material, and the water retaining material is provided with a through-hole that enables passage of an electron beam with which the liquid specimen is irradiated.

Abstract: A capacitor that includes a porous metal base material, a first buffer layer formed by an atomic layer deposition method on the porous metal base material, a dielectric layer formed by an atomic layer deposition method on the first buffer layer, and an upper electrode formed on the dielectric layer.

Abstract: A wafer level package which includes an IC chip; a rewiring layer on the IC chip; and a capacitor embedded in the rewiring layer.

Abstract: A capacitor that includes a porous metallic base material; a phosphorus-containing layer on the porous metallic base material; a dielectric layer on the phosphorus-containing layer; and an electrode on the dielectric layer.

Abstract: A capacitor that includes a porous metal base material, a dielectric layer formed on the porous metal base material, an upper electrode formed on the dielectric layer, a first terminal electrode electrically connected to the porous metal base material, and a second terminal electrode electrically connected to the upper electrode. The porous metal base material includes a high-porosity part and low-porosity parts, and the low-porosity parts are present at a pair of opposed side surfaces of the porous metal base material.

Abstract: A capacitor includes a first electrode formed from a conductive porous base material, a dielectric layer located on the first electrode and a second electrode located on the dielectric layer. The first electrode is electrically connected to first and second terminal electrodes located on respective opposite ends of the first electrode. The second electrode is located between the first and second terminal electrodes and is electrically connected to a third terminal electrode located on the second electrode.

Abstract: A capacitor that includes a conductive base material with high specific surface area, a dielectric layer covering the conductive base material with high specific surface area, and an upper electrode covering the dielectric layer, in which the conductive base material with high specific surface area is formed of a metal sintered body as a whole.

Abstract: A capacitor that includes a conductive porous base material having a porous portion; a dielectric layer on the porous portion; and an upper electrode on the dielectric layer. In the porous portion of the conductive porous base material, a portion having a base material thickness between pores of 1.2 times or less of a thickness of the dielectric layer exits in 5% or more of the entire porous portion, and the dielectric layer is formed from a compound including atoms having an origin different from an origin of the conductive porous base material.

Abstract: A capacitor having a conductive porous substrate with at least two electrostatic capacitance forming sections, each of the at least two electrostatic capacitance forming sections including a porous portion of the conductive porous substrate, a dielectric layer on the porous portion, and an upper electrode on the dielectric layer. The at least two electrostatic capacitance forming sections are electrically connected in series by the conductive porous substrate.

Abstract: A method for manufacturing a capacitor built-in substrate includes: preparing a capacitor built-in core insulating film and laminating a respective buildup layer to each of opposed main surfaces of the capacitor built-in core insulating film. The capacitor built-in core insulating film includes a first and second metal layers, an insulating layer and a capacitor. The first and second metal layers are disposed so as to face each other with the insulating layer interposed therebetween. The capacitor is disposed so as to extend through the insulating layer with one capacitor electrode being electrically connected to the first metal layer and the other capacitor electrode being electrically connected to the second metal layer.

Abstract: A capacitor having an element main body including a metal high specific surface area substrate which has fine pores formed therein and a large specific surface area; a dielectric layer formed in a prescribed region on the surface of the high specific surface area substrate including the inner surfaces of the pores; and a conductive part on the dielectric layer. A first terminal electrode is electrically connected to the high specific surface area substrate. A second terminal electrode is electrically connected to the conductive part. The dielectric layer is interposed between the conductive part and the high specific surface area substrate, and the high specific surface area substrate and the second terminal electrode are electrically insulated from each other.

Abstract: A capacitor having an element main body including a metal high specific surface area substrate which has fine pores formed therein and has a large specific surface area; a dielectric layer in a prescribed region on the surface of the high specific surface area substrate including the inner surfaces of the pores; and a conductive part on the dielectric layer. A first terminal electrode is electrically connected to the high specific surface area substrate. A second terminal electrode is electrically connected to the conductive part. The element main body includes a first region that contributes to the acquisition of the capacitance and second regions having a smaller void ratio than the first region. The second regions have a void ratio of 25% or less.

Abstract: A specimen loading method for loading a specimen that contains water into a specimen chamber of a charged particle beam device, includes: a step (S100) of mounting the specimen on a specimen support; a step (S102) of covering a predetermined area of the specimen with a water retention material; a step (S104) of evacuating the specimen chamber in which the specimen having the predetermined area covered with the water retention material is placed; and a step (S106) of exposing the predetermined area covered with the water retention material.

Abstract: A capacitor that includes a conductive metal base material with a porous part, a dielectric layer on the porous part, and an upper electrode on the dielectric layer, and has an electrostatic capacitance formation part only on one principal surface side of the capacitor.