Patents by Inventor Noriyuki Kuwano

Noriyuki Kuwano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CONDENSED HETEROCYCLIC COMPOUND
    Publication number: 20240092784
    Abstract: A condensed heterocyclic compound has a sepiapterin reductase inhibitory action and is particularly useful for treatment of a pain. The condensed heterocyclic compound represented by Formula (I) below (R1 represents a hydrocarbon group or the like; R2 and R3 represent a hydrogen atom or the like; R4, X, and Y represent defined substituents), a tautomer or a pharmaceutically acceptable salt of the compound, or a solvate of any of these.
    Type: Application
    Filed: April 13, 2021
    Publication date: March 21, 2024
    Applicants: NISSAN CHEMICAL CORPORATION, SHIONOGI & CO., LTD.
    Inventors: Masahiro KAMAURA, Yusuke INABA, Yusuke SHINTANI, Yuki KUWANO, Moemi NAKAO, Hiroshi NAGAI, Noriyuki KUROSE, Kenji TAKAYA, Mado NAKAJIMA
  • Piezoelectric element and method for manufacturing
    Patent number: 7508120
    Abstract: A lower electrode is formed on a silica glass substrate or a stainless substrate. Through a sputtering process, a thin film of aluminum nitride and/or zinc oxide is formed on the lower substrate so that the degree of dipole-orientation becomes 55% or more, and thereby a piezoelectric thin film is formed. And an upper electrode is formed on the piezoelectric thin film. A piezoelectric device has a piezoelectric layer made of aluminum nitride and/or zinc oxide. Aluminum nitride and zinc oxide with a crystal structure have inborn piezoelectric characteristics because their crystal structures are not symmetrical, they do not have Curie temperature unlike ferroelectrics, and in aluminum nitride and zinc oxide, magnetic transition does not occur even at high temperature, so that they never lose piezoelectric characteristics until crystal melts or sublimates.
    Type: Grant
    Filed: January 21, 2004
    Date of Patent: March 24, 2009
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Morito Akiyama, Naohiro Ueno, Hiroshi Tateyama, Noriyuki Kuwano
  • Piezoelectric element and method for manufacturing
    Publication number: 20060131680
    Abstract: A lower electrode is formed on a silica glass substrate or a stainless substrate. Through a sputtering process, a thin film of aluminum nitride and/or zinc oxide is formed on the lower substrate so that the degree of dipole-orientation becomes 55% or more, and thereby a piezoelectric thin film is formed. And an upper electrode is formed on the piezoelectric thin film. A piezoelectric device has a piezoelectric layer made of aluminum nitride and/or zinc oxide. Aluminum nitride and zinc oxide with a crystal structure have inborn piezoelectric characteristics because their crystal structures are not symmetrical, they do not have Curie temperature unlike ferroelectrics, and in aluminum nitride and zinc oxide, magnetic transition does not occur even at high temperature, so that they never lose piezoelectric characteristics until crystal melts or sublimates.
    Type: Application
    Filed: January 21, 2004
    Publication date: June 22, 2006
    Inventors: Morito Akiyama, Naohiro Ueno, Hiroshi Tateyama, Noriyuki Kuwano