Abstract: A semiconductor device in which an SOI substrate having an element region in which circuit elements are formed, an insulation layer having a first surface adjoining the SOI substrate, and a support substrate of a first conductivity type are laminated. On the SOI substrate, a transfer electrode configured to transfer charges generated in the support substrate to a third semiconductor layer is formed in a region different from the element region, and the transfer electrode and the third semiconductor layer are adjacent in plan view.

Abstract: The disclosure provides an information acquisition device capable of accurately acquiring information inside a living body as compared with a transmission type and a reflection type. The information acquisition device includes an output source that irradiates a target living body with a detection wave, and a reception part capable of receiving the detection wave irradiated to the target living body. The output source and the reception part are arranged so that an angle between a direction of irradiating the target living body with the detection wave from the output source and a direction from an irradiation point of the target living body irradiated by the detection wave to the reception part is an obtuse angle.

Abstract: A method of manufacturing a semiconductor device and a method of manufacturing a solid-state imaging device, including preparing an SOI wafer in which a silicon layer is disposed on an FZ wafer that is a silicon wafer manufactured according to an FZ method, with an insulation layer being interposed between the silicon layer and the FZ wafer, removing a part of the silicon layer, as an element isolation region, to form a trench for division of the silicon layer, and forming plural circuit elements that each include at least a part of the silicon layer other than the element isolation region, and which are isolated from each other by the element isolation region.

Abstract: A method of manufacturing a semiconductor device and a method of manufacturing a solid-state imaging device, including preparing an SOI wafer in which a silicon layer is disposed on an FZ wafer that is a silicon wafer manufactured according to an FZ method, with an insulation layer being interposed between the silicon layer and the FZ wafer, removing a part of the silicon layer, as an element isolation region, to form a trench for division of the silicon layer, and forming plural circuit elements that each include at least a part of the silicon layer other than the element isolation region, and which are isolated from each other by the element isolation region.

Abstract: A semiconductor device formed on a silicon-on-insulator substrate includes a gate electrode, a gate insulation film, a drain diffusion region, a drift region, a body region, a plurality of source diffusion regions, and a plurality of charge collection diffusion regions. The source diffusion regions and charge collection diffusion regions are of mutually opposite conductivity types, and alternate with one another in the direction paralleling the width of the gate electrode. The half-width of each source diffusion region is equal to or less than the length of the gate electrode plus the half-length of the drift region.

Abstract: A semiconductor device formed on a silicon-on-insulator substrate includes a gate electrode, a gate insulation film, a drain diffusion region, a drift region, a body region, a plurality of source diffusion regions, and a plurality of charge collection diffusion regions. The source diffusion regions and charge collection diffusion regions are of mutually opposite conductivity types, and alternate with one another in the direction paralleling the width of the gate electrode. The half-width of each source diffusion region is equal to or less than the length of the gate electrode plus the half-length of the drift region.

Abstract: A photodiode includes a photosensitive element formed in a silicon semiconductor layer on an insulation layer. The photosensitive element includes a low concentration diffusion layer, a P-type high concentration diffusion layer, and an N-type high concentration diffusion layer. A method of producing the photodiode includes the steps of: forming an insulation material layer on the silicon semiconductor layer after the P-type impurity and the N-type impurity are implanted into the low concentration diffusion layer, the P-type high concentration diffusion layer, and the N-type high concentration diffusion layer; forming an opening portion in the insulation material layer in an area for forming the low concentration diffusion layer; and etching the silicon semiconductor layer in the area for forming the low concentration diffusion layer so that a thickness of the silicon semiconductor layer is reduced to a specific level.

Abstract: A light detecting apparatus includes an SOI substrate. In the SOI substrate, a semiconductor layer and a silicon substrate are laminated via an insulating layer. The semiconductor layer has a light receiving unit and a circuit unit formed therein. The light detecting apparatus also includes an interlayer insulating film formed on a first main surface of the SOI substrate. The light detecting apparatus also includes a front surface circuit wiring embedded in the interlayer insulating film. The light detecting apparatus also includes a front surface pseudo-wiring having a grid unit. The grid unit has at least one opening allowing passage of a light of a predetermined wavelength range to the light receiving unit. The light detecting apparatus also includes a rear surface circuit wiring and a rear surface pseudo-wiring formed on a second main surface of the SOI substrate.

Abstract: A semiconductor device which comprises an SOI substrate having an insulating layer between a semiconductor substrate layer and a semiconductor layer in a surface of which a semiconductor element is formed, and at least one external terminal provided, via an insulating film, on a surface of the semiconductor substrate layer and electrically connected to the semiconductor element. The semiconductor device further comprises a contact portion constituted by a conductive film reaching through the insulating film to electrically connect to the semiconductor substrate layer; and a potential fixing electrode provided, via the insulating film, on the surface of the semiconductor substrate layer and connected to the contact portion.

Abstract: Provided is a front structure of a vehicle 1, and the front structure includes a pair of side members 30, a first cross member 10, a bumper 60, upper protruding-plate portions 41, lower protruding-plate portions 42, and a bracket 70. Each of the side members 30 includes an upper plate 31, a lower plate 32, and a vertical plate 33, the upper plate 31 and the lower plate 32 arranged to vertically face each other, the vertical plate 33 connecting the upper and lower plates 31 and 32. The first cross member 10 connects front-end portions 35 respectively of the side members 30. Each of the upper protruding-plate portions 41 extends frontwards integrally from the corresponding upper plate 31. Each of the lower protruding-plate portions 42 extends frontwards integrally from the corresponding lower plate 32 so as to face the corresponding upper protruding-plate portion 41.

Abstract: Provided is a front structure of a vehicle 1, and the front structure includes a pair of side frames 2 and a first cross member 31. The pair of side frames 2 are disposed respectively on both sides of the vehicle in a vehicle-width direction and extend in a front-to-rear direction. The first cross member extends in the vehicle-width direction, and connects front-end portions 25 of the pair of side frames 2. Each of the front-end portions 25 of the side frames 2 includes a protruding portion 26 that extends frontwards integrally thereof beyond the first cross member 31. In the event of a frontal collision of the vehicle 1, the protruding portions 26 absorb the produced energy, so that the amount of deformation of portions respectively of the side frames 2 located at rear sides of the front-end portions 25 can be reduced.

Abstract: The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.

Abstract: A photodiode includes a first silicon semiconductor layer formed over an insulating layer, a second silicon semiconductor layer formed over the insulating layer, having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, a low-concentration diffusion layer which is formed in the second silicon semiconductor layer and in which an impurity of either one of a P type and an N type is diffused in a low concentration, a P-type high-concentration diffusion layer which is formed in the first silicon semiconductor layer and in which the P-type impurity is diffused in a high concentration, and an N-type high-concentration diffusion layer which is opposite to the P-type high-concentration diffusion layer with the low-concentration diffusion layer interposed therebetween and in which the N-type impurity is diffused in a high concentration.

Abstract: A front structure of a cab-over type vehicle 1 includes a side member 10, a cab mount bracket 3, and a stiffener inner reinforcement 4. The cab mount bracket 3 is fixed to the side member 10, and includes a bracket base 31 mounted on a front end portion 15 of the side member 10 and a shaft supporting portion 30 supporting a cab 5. The stiffener inner reinforcement 4 is fixed to the side member 10, and includes a vertical wall portion 44. The vertical wall portion 44 is disposed in a direction that crosses a front-rear direction, between an upper plate 11 and a lower plate 12 of the side member 10 and below a rear end edge 36 of the bracket base 31. When a load F toward the rear is applied to the cab mount bracket 3, the vertical wall portion 44 suppresses upward bending deformation of the front end portion 15 of the side member 10.

Abstract: A photodiode includes a photosensitive element formed in a silicon semiconductor layer on an insulation layer. The photosensitive element includes a low concentration diffusion layer, a P-type high concentration diffusion layer, and an N-type high concentration diffusion layer. A method of producing the photodiode includes the steps of: forming an insulation material layer on the silicon semiconductor layer after the P-type impurity and the N-type impurity are implanted into the low concentration diffusion layer, the P-type high concentration diffusion layer, and the N-type high concentration diffusion layer; forming an opening portion in the insulation material layer in an area for forming the low concentration diffusion layer; and etching the silicon semiconductor layer in the area for forming the low concentration diffusion layer so that a thickness of the silicon semiconductor layer is reduced to a specific level.

Abstract: A light detecting apparatus includes an SOI substrate. In the SOI substrate, a semiconductor layer and a silicon substrate are laminated via an insulating layer. The semiconductor layer has a light receiving unit and a circuit unit formed therein. The light detecting apparatus also includes an interlayer insulating film formed on a first main surface of the SOI substrate. The light detecting apparatus also includes a front surface circuit wiring embedded in the interlayer insulating film. The light detecting apparatus also includes a front surface pseudo-wiring having a grid unit. The grid unit has at least one opening allowing passage of a light of a predetermined wavelength range to the light receiving unit. The light detecting apparatus also includes a rear surface circuit wiring and a rear surface pseudo-wiring formed on a second main surface of the SOI substrate.

Abstract: A photodiode includes a photosensitive element formed in a silicon semiconductor layer on an insulation layer. The photosensitive element includes a low concentration diffusion layer, a P-type high concentration diffusion layer, and an N-type high concentration diffusion layer. A method of producing the photodiode includes the steps of: forming an insulation material layer on the silicon semiconductor layer after the P-type impurity and the N-type impurity are implanted into the low concentration diffusion layer, the P-type high concentration diffusion layer, and the N-type high concentration diffusion layer; forming an opening portion in the insulation material layer in an area for forming the low concentration diffusion layer; and etching the silicon semiconductor layer in the area for forming the low concentration diffusion layer so that a thickness of the silicon semiconductor layer is reduced to a specific level.

Abstract: The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.

Abstract: Provided is a front structure of a vehicle 1, and the front structure includes a pair of side members 30, a first cross member 10, a bumper 60, upper protruding-plate portions 41, lower protruding-plate portions 42, and a bracket 70. Each of the side members 30 includes an upper plate 31, a lower plate 32, and a vertical plate 33, the upper plate 31 and the lower plate 32 arranged to vertically face each other, the vertical plate 33 connecting the upper and lower plates 31 and 32. The first cross member 10 connects front-end portions 35 respectively of the side members 30. Each of the upper protruding-plate portions 41 extends frontwards integrally from the corresponding upper plate 31. Each of the lower protruding-plate portions 42 extends frontwards integrally from the corresponding lower plate 32 so as to face the corresponding upper protruding-plate portion 41.

Abstract: The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.