Patents by Inventor Norman Ahlquist

Norman Ahlquist has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making MOS device by forming self-aligned polysilicon and tungsten composite gate
    Patent number: 4441247
    Abstract: A process is described for forming MOS circuits which include underlying polysilicon members such as gate members covered with metal. In one embodiment, a self-aligning tungsten process is used to cover the polysilicon members. Low temperature "rear end" steps are used to prevent deterioration of the underlying metal. For example, a plasma nitride protective layer is used to cover the metal. The polysilicon/metal members provide reduced resistance and increase the speed of the resultant MOS circuits.
    Type: Grant
    Filed: June 29, 1981
    Date of Patent: April 10, 1984
    Assignee: Intel Corporation
    Inventors: Paolo Gargini, Israel Beinglass, Norman Ahlquist
  • High contrast alignment marker for integrated circuit fabrication
    Patent number: 4374915
    Abstract: A wafer marker is described for aligning masks with the wafer. The marker comprises a depression in the wafer which is defined by sloped sides and a pitted bottom. The sloped sides and pitted bottom do not directly reflect light as does the surface of the surrounding silicon and thus the marker appears as a darker region. The bottom of the depression is pitted by exposing the anode during a silicon plasma etching step.
    Type: Grant
    Filed: July 30, 1981
    Date of Patent: February 22, 1983
    Assignee: Intel Corporation
    Inventors: C. Norman Ahlquist, Yaw Wen Hu, Peter F. Schoen, Paul A. Poenisch
  • Variable thickness self-aligned photoresist process
    Patent number: 4231811
    Abstract: A process for forming with a single masking step regions of different thicknesses in a photo-sensitive layer is disclosed. A masking member or reticle includes opaque and transparent areas and areas with a grating. The pitch of the periodic grating is of a lesser dimension than can be resolved by the masking projection apparatus. The photo-sensitive region illuminated by the grating receives uniform illumination at an intermediate intensity, thereby providing, after developing, a layer with regions of intermediate thickness.
    Type: Grant
    Filed: September 13, 1979
    Date of Patent: November 4, 1980
    Assignee: Intel Corporation
    Inventors: Sasson Somekh, C. Norman Ahlquist