Abstract: Disclosed is a bonding and packaging scheme for semiconductor device chips with particular application to semiconductor monolithic display chips. The display chip is bonded face down in a recess formed in a transparent substrate. In one embodiment, the metallization on the chip is aligned and made coplanar with the auxiliary metallization on the substrate, and the gap between the metallizations is bridged by a conductive material. This can be accomplished, for example, by solder reflow or epoxy bonding techniques. In an alternative embodiment, the metallization is formed after the chip is bonded to the substrate utilizing a coating which fills the gap between the chip and the substrate. The substrate may be dyed to act as a contrast filter, and a magnifying lens may be molded thereon in further processing.

Abstract: Described is a liquid phase epitaxy technique using conventional slider apparatus in which, after heating the source solution to saturation, the solution temperature is rapidly reduced so that supersaturation takes place but heterogeneous nucleation does not. The solution is allowed to reach convective equilibrium and only then is brought into contact with the substrate. Once in contact, the temperature is maintained constant so that convection currents in the solution are substantially reduced. This technique has several advantages: reduced edge growth, increased usable wafer area, and reduced wipe-off problems.