Patents by Inventor Norman Shaowen Chen

Norman Shaowen Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Grid-based fragmentation for optical proximity correction in photolithography mask applications
    Patent number: 8010915
    Abstract: An optical proximity correction (OPC) method for photolithography applications can be utilized to reduce the processing time, cost, and post-OPC file size associated with conventional methods. The OPC method provides a target layout pattern that represents a corresponding mask pattern for a photolithography mask, and aligns the target layout pattern relative to a suitably dimensioned fragmentation grid. Then, at least one feature of the target layout pattern is fragmented using the fragmentation grid. Thereafter, a fragment data set is generated in response to the grid-based fragmentation of the target layout pattern.
    Type: Grant
    Filed: July 10, 2008
    Date of Patent: August 30, 2011
    Assignee: GLOBALFOUNDRIES, Inc.
    Inventors: Norman Shaowen Chen, Scott Goad, Paul Willard Ackmann
  • Lithographic mask and methods for fabricating a semiconductor device
    Patent number: 7776494
    Abstract: Methods for fabricating a semiconductor device and a lithographic mask of use in that method are provided for. The lithographic mask comprises an optically transparent substrate, an attPSM pattern overlying the optically transparent substrate, and a phase shifted optically transparent portion adjacent to and aligned with an edge of the attPSM pattern.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: August 17, 2010
    Assignee: Global Foundries Inc.
    Inventors: Norman Shaowen Chen, Chidam Kallingal
  • GRID-BASED FRAGMENTATION FOR OPTICAL PROXIMITY CORRECTION IN PHOTOLITHOGRAPHY MASK APPLICATIONS
    Publication number: 20100011335
    Abstract: An optical proximity correction (OPC) method for photolithography applications can be utilized to reduce the processing time, cost, and post-OPC file size associated with conventional methods. The OPC method provides a target layout pattern that represents a corresponding mask pattern for a photolithography mask, and aligns the target layout pattern relative to a suitably dimensioned fragmentation grid. Then, at least one feature of the target layout pattern is fragmented using the fragmentation grid. Thereafter, a fragment data set is generated in response to the grid-based fragmentation of the target layout pattern.
    Type: Application
    Filed: July 10, 2008
    Publication date: January 14, 2010
    Applicant: ADVANCED MICRO DEVICES, INC.
    Inventors: Norman Shaowen CHEN, Scott GOAD, Paul Willard ACKMANN
  • LITHOGRAPHIC MASK AND METHODS FOR FABRICATING A SEMICONDUCTOR DEVICE
    Publication number: 20080160422
    Abstract: Methods for fabricating a semiconductor device and a lithographic mask of use in that method are provided for. The lithographic mask comprises an optically transparent substrate, an attPSM pattern overlying the optically transparent substrate, and a phase shifted optically transparent portion adjacent to and aligned with an edge of the attPSM pattern.
    Type: Application
    Filed: December 28, 2006
    Publication date: July 3, 2008
    Inventors: Norman Shaowen Chen, Chidam Kallingal