Abstract: A method of manufacturing an optoelectronic component includes: A) providing a substrate, B) providing a metallic liquid arranged in a structured manner and in direct mechanical contact on the substrate and including at least one first metal, C) providing semiconductor chips each having a metallic termination layer on their rear side, the metallic termination layer including at least one second metal different from the first metal, and D) self-organized arranging the semiconductor chips on the metallic liquid so that the first metal and the second metal form at least one intermetallic compound having a higher re-melting temperature than the melting temperature of the metallic liquid, wherein the intermetallic compound is a connecting layer between the substrate and the semiconductor chips.

Abstract: A phosphor sheet (6) is provided comprising the following elements: a first polymer sheet (1) of a first polymer material, which is partially cured, a second polymer sheet (4) of a second polymer material, which is partially cured, and a phosphor layer (4) comprising phosphor particles with a plurality of first phosphor particles, said first phosphor particles convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, wherein the phosphor layer (3) is sandwiched between the first polymer sheet (1) and the second polymer sheet (4). Further, a method for the production of a phosphor sheet (6), an optoelectronic device and a method for the production of an optoelectronic device are provided.

Abstract: A multipixel LED component includes a plurality of emission zones; a plurality of conversion elements adapted to convert radiation emitted from the emission zones into radiation of another wavelength range; a controller including a plurality of current sources and a transmitter adapted for wireless data transmission; and two electrical contact structures through which the LED component is energized, wherein the controller mechanically fixedly connects to the emission zones, each of the current sources is assigned to one of the emission zones biuniquely, the transmitter receives signals to control the current sources, the current sources are controllable according to the signals, each current source operates the emission zone assigned to it, and the number of emission zones is greater than the number of contact structures.

Abstract: An optoelectronic semiconductor component and a 3D printer are disclosed. In an embodiment the component includes a carrier, a plurality of individually controllable pixels configured to emit radiation during operation, wherein the plurality of individual pixels is mounted on the carrier and is formed from at least one semiconductor material and a plurality of transport channels configured to transport a gas or a liquid through the semiconductor component in a direction transverse to and towards a radiation exit side of the semiconductor component, wherein the pixels are configured to emit radiation having a wavelength of maximum intensity of 470 nm or less, and wherein all pixels include the same semiconductor layer sequence and emit radiation of the same wavelength.

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).

Abstract: A mount (10) and an optoelectronic component (100) with the mount (10) are provided, wherein the mount (10) comprises a moulding (5), at least one through-contact (41, 42) and a plurality of reinforcing fibres (52), wherein the moulding (5) is formed from an electrically insulating moulding material (53), the through-contact (41, 42) is formed from an electrically conductive material, and the reinforcing fibres (52) produce a mechanical connection between the moulding (5) and the through-contact (41, 42) by the reinforcing fibres (52) being arranged in certain regions of the moulding (5) and arranged in certain regions of the through-contact (41, 42). A method for producing a mount or a component with such a mount is also provided.

Abstract: A ceramic conversion element, a light-emitting device and a method for producing a ceramic conversion element are disclosed. In an embodiment a ceramic conversion element includes a central region with a structured top surface including a plurality of structure elements and a frame surrounding the central region, the frame having a planar top surface, wherein the central region and the frame are formed as one piece, and wherein the ceramic conversion element is configured to convert primary radiation into secondary radiation of a different wavelength range.

Abstract: In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •A) providing a growth substrate (2); •B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •C) producing a plurality of separate growth points (45) on or at the buffer layer (4); •D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 ?m inclusive; and •E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). A p-contact surface (61) is electrically connected to the p-contact (41), and an n-contact surface (63) is electrically connected to the n-contact (43) such that the p-contact surface (61) and the n-contact surface (63) are configured for external electrical and mechanical connection of the semiconductor laser (1).

Abstract: A ceramic conversion element, a light-emitting device and a method for producing a ceramic conversion element are disclosed. In an embodiment a ceramic conversion element includes a central region with a structured top surface including a plurality of structure elements and a frame surrounding the central region, the frame having a planar top surface, wherein the central region and the frame are formed as one piece, and wherein the ceramic conversion element is configured to convert primary radiation into secondary radiation of a different wavelength range.

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).

Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

Abstract: The invention relates, in one embodiment, to a method for producing light-emitting semiconductor components, which method comprises the following steps: A) providing a glass capillary (2) composed of a glass material, B) filling the glass capillary (2) with luminescent substances (3), C) sealing the glass capillary (2) in a sealing region (22) by melting the glass material such that the glass capillary (2) is closed by the glass material itself, and D) attaching the sealed glass capillary (2) to a light-emitting diode chip (4) such that the radiation emitted by the light-emitting diode chip (4) is converted into visible light by the luminescent substances (3) during operation, wherein in step C) a distance between the sealing region (22) and the luminescent substances (3) is at most 7 mm, and wherein the different luminescent substances (3) are separated from each other along a longitudinal axis (L) of the glass capillary (2).

Abstract: A method of producing an optoelectronic component includes providing an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged; arranging a protection diode on the first contact and the second contact; galvanically growing a first pin on the first electrical contact and a second pin on the second electrical contact; and embedding the first pin, the second pin, and the protection diode in a molded body.

Abstract: A method of manufacturing an optoelectronic component includes: A) providing a sub-strate, B) providing a metallic liquid arranged in a structured manner and in direct mechanical contact on the substrate and including at least one first metal, C) providing semiconductor chips each having a metallic termination layer on their rear side, the metallic termination layer including at least one second metal different from the first metal, and D) self-organized arranging the semiconductor chips on the metallic liquid so that the first metal and the second metal form at least one intermetallic compound having a higher re-melting temperature than the melting temperature of the metallic liquid, wherein the intermetallic compound is a connecting layer between the substrate and the semiconductor chips.

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed.

Abstract: A radiation-emitting device includes a semiconductor layer sequence having an active layer that emits a primary radiation during operation, a decoupling surface on a surface of the semiconductor layer sequence, a wavelength conversion layer on a side of the semiconductor layer sequence facing away from the decoupling surface, containing at least one conversion material that converts the primary radiation into secondary radiation, and a mirror layer on the side of the wavelength conversion layer facing away from the semiconductor layer sequence, wherein the at least one conversion material is electrically conductive and/or embedded in an electrically conductive matrix material.

Abstract: The invention relates to a component with at least one optoelectronic semiconductor chip, comprising: a connection substrate, which has an assembly surface and electric contact structures, and a plurality of structured semiconductor units, each of which has a plurality of monolithically connected pixels with a respective active layer that emits light during operation, wherein: the semiconductor units are arranged at a lateral distance to one another on the assembly surface, the distance between adjacent semiconductor units is at least 5 ?m and maximally 55 ?m, and the pixels can be controlled in an electrically separated manner. The invention also relates to a method for producing said component.

Abstract: An optoelectronic semiconductor device, a method for manufacturing an optoelectronic semiconductor device and light source having an optoelectronic semiconductor device are disclosed.