Patents by Inventor Nozomi Tajima

Nozomi Tajima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • COMPOUND, ORGANIC ELECTROLUMINESCENCE ELEMENT, AND ELECTRONIC DEVICE
    Publication number: 20230345816
    Abstract: A compound represented by the formula (12X). In the formula (12X), Py1 and Py2 each independently represent a substituted or unsubstituted 1-pyrenyl group, L1 and L2 each independently represent a substituted or unsubstituted phenylene group or a substituted or unsubstituted naphthylene group. When L1 and L2 each independently represent a substituted or unsubstituted phenylene group, -L1-L2- in the formula (12X) represents a group represented by one of the formulae (13-1) to (13-6), (10-1), (20-1), and (30-1). When L1 and L2 each independently represent a substituted or unsubstituted naphthylene group, a bonding position of the naphthylene group in L1 is different from a bonding position of the naphthylene group in L2.
    Type: Application
    Filed: November 26, 2020
    Publication date: October 26, 2023
    Applicant: IDEMITSU KOSAN CO.,LTD.
    Inventors: Yuki NAKANO, Taro YAMAKI, Hiroaki ITOI, Takamoto MORITA, Tomoki KATO, Nozomi TAJIMA, Satomi TASAKI, Kazuki NISHIMURA
  • Sputtering target, oxide semiconductor thin film, and method for producing oxide semiconductor thin film
    Patent number: 11462399
    Abstract: A sputtering target including an oxide that includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO3(ZnO)m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.
    Type: Grant
    Filed: September 28, 2018
    Date of Patent: October 4, 2022
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuaki Ebata, Mami Nishimura, Nozomi Tajima
  • Sputtering target, oxide semiconductor thin film, and method for producing these
    Patent number: 11443943
    Abstract: A sputtering target including an oxide that includes an indium (In) element, a tin (Sn) element, a zinc (Zn) element and an aluminum (Al) element, wherein the oxide includes a homologous structure compound represented by InAlO3(ZnO)m (m is 0.1 to 10) and a bixbyite structure compound represented by In2O3.
    Type: Grant
    Filed: December 5, 2018
    Date of Patent: September 13, 2022
    Assignee: Idemitsu Kosam Co., Ltd.
    Inventors: Kazuaki Ebata, Nozomi Tajima
  • SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR PRODUCING THESE
    Publication number: 20190109001
    Abstract: A sputtering target including an oxide that includes an indium (In) element, a tin (Sn) element, a zinc (Zn) element and an aluminum (Al) element, wherein the oxide includes a homologous structure compound represented by InAlO3(ZnO)m (m is 0.1 to 10) and a bixbyite structure compound represented by In2O3.
    Type: Application
    Filed: December 5, 2018
    Publication date: April 11, 2019
    Inventors: Kazuaki EBATA, Nozomi TAJIMA
  • SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR PRODUCING OXIDE SEMICONDUCTOR THIN FILM
    Publication number: 20190035626
    Abstract: A sputtering target including an oxide that includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO3(ZnO)m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.
    Type: Application
    Filed: September 28, 2018
    Publication date: January 31, 2019
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuaki EBATA, Mami NISHIMURA, Nozomi TAJIMA
  • SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR PRODUCING THESE
    Publication number: 20160293412
    Abstract: A sputtering target including an oxide that includes an indium (In) element, a tin (Sn) element, a zinc (Zn) element and an aluminum (Al) element, wherein the oxide includes a homologous structure compound represented by InAlO3(ZnO)n, (m is 0.1 to 10) and a bixbyite structure compound represented by In2O3.
    Type: Application
    Filed: November 8, 2013
    Publication date: October 6, 2016
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuaki EBATA, Nozomi TAJIMA
  • SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR PRODUCING OXIDE SEMICONDUCTOR THIN FILM
    Publication number: 20150311071
    Abstract: A sputtering target including an oxide that, includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO3ZnO)m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.
    Type: Application
    Filed: July 17, 2013
    Publication date: October 29, 2015
    Inventors: Kazuaki Ebata, Mami Nishimura, Nozomi Tajima