Abstract: The honeycomb catalyst structure to be used for exhaust gas of a marine engine includes an SCR catalyst supported on a metal honeycomb unit having a shape divided by cell walls into a plurality of cells extending from one end face to the other end face. The SCR catalyst contains TiO2 alone, or contains TiO2 as a principal component and any one type or two or more types of V2O5, WO3, MoO3, SiO2, and Al2O3 in combination. The cell density of the plurality cells is 100 to 500 cpsi, and the slope of a straight line represented by a relationship between the flow velocity and the pressure loss of the exhaust gas passing through the cells is 30 or more and 180 or less.

Abstract: The method for suppressing formation of a high-melting-point pipe-clogging substance includes disposing a urea-solution supply pipe (6) configured to supply pressurized air and a urea solution into a pipe through which exhaust gas flows, connecting a urea-solution spray nozzle (7) near a tip of the urea-solution supply pipe (6), providing a mixing section (8) configured to mix the exhaust gas flowing through the pipe and a sprayed urea solution sprayed from the urea-solution spray nozzle (7), circumferentially providing a metal sheet (9) on all or part of an inner wall surface of the pipe in a belt-like manner around the mixing section (8), and forming a hydrolysis catalyst layer (10) configured to promote hydrolysis of urea on an inner surface of the metal sheet (9).

Abstract: A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit having a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit which generates a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot.

Abstract: A layer-forming device that enables highly efficient layer formation and has a simplified configuration includes: a substrate feeding mechanism; a plasma-generating electrode; a space-partitioning wall; and a plurality of injectors. The plasma-generating electrode faces towards a feeding pathway of the substrate, and generates plasma using a reactive gas upon a supply of electric power. The space-partitioning wall is disposed between the feeding pathway and the plasma-generating electrode. A plurality of slit-shaped through-holes, through which radicals, ions generated from the plasma, or a portion of the plasma can pass, are formed at predetermined intervals in the space-partitioning wall.

Abstract: When a film is formed atomic layer by atomic layer with a use of a raw material gas and a reaction gas, a raw material gas is supplied into a film-forming space in which a substrate is placed to adsorb a component of the raw material gas onto the substrate. Then, a reaction gas is supplied into the film-forming space. Plasma is produced in the film-forming space using the reaction gas supplied so that part of a component of the raw material gas adsorbed on the substrate reacts with the reaction gas. At this moment, a duration of production of the plasma is set within a range of 0.5 millisecond to 100 milliseconds according to a degree of at least one property of a film to be formed, and a density of power input to the plasma source is in a range of 0.05 W/cm2 to 10 W/cm2.

Abstract: A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit having a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit which generates a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot.

Abstract: A layer-forming device that enables highly efficient layer formation and has a simplified configuration includes: a substrate feeding mechanism; a plasma-generating electrode; a space-partitioning wall; and a plurality of injectors. The plasma-generating electrode faces towards a feeding pathway of the substrate, and generates plasma using a reactive gas upon a supply of electric power. The space-partitioning wall is disposed between the feeding pathway and the plasma-generating electrode. A plurality of slit-shaped through-holes, through which radicals, ions generated from the plasma, or a portion of the plasma can pass, are formed at predetermined intervals in the space-partitioning wall.

Abstract: Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).

Abstract: A raw material supply device (105) includes an introduction pipe (152a) which introduces a carrier gas into a raw material vessel (151), a transport pipe (152b) which transports a source gas fed out from the raw material vessel, a supply pipe (155a) which is branched from the transport pipe and supplies the source gas to a film forming chamber (101), a circulation pipe (155b) which is branched from the transport pipe (152b) and returns the source gas to the introduction pipe (152a), an introduction valve (156a) which is attached to the introduction pipe, a supply valve (156b) which is attached to the supply pipe, a circulation valve (156c) which is attached to the circulation pipe, and a controller (157) which controls opening/closing of the valves. The controller controls the supply valve and the circulation valve to be in opposite open/closed states. The source gas can be supplied more stably while suppressing the waste of the raw material.

Abstract: This thin-film forming device includes: a deposition vessel in which a reduced-pressure deposition space, to which a raw material gas and a reactant gas are alternately supplied on different timings, is formed in order to form a thin film on the substrate; and a gas supply unit configured to supply the raw material gas and the reactant gas to the deposition vessel. The gas supply unit is provided with at least one partition that bends a gas passage from an inlet port of each of the raw material gas and the reactant gas toward the deposition space.

Abstract: An atomic layer growing apparatus includes a film forming chamber (101) in which the vapor phase growth of a film is performed, a substrate table (102) having a heating mechanism accommodated in the film forming chamber (101), and an exhaust mechanism (104). The atomic layer growing apparatus also includes a material supply unit (105) including a material vaporizer (151), two buffer tanks, i.e., a buffer tank A (152a) and buffer tank B (152b), a fill valve A (153a) and supply valve A (154a) of the buffer tank A (152a), a fill valve B (153b) and supply valve B (154b) of the buffer tank B (152b), an injection control valve (155), and a control unit (156) which controls the opening/closing of each valve.

Abstract: A raw material supply device (105) includes an introduction pipe (152a) which introduces a carrier gas into a raw material vessel (151), a transport pipe (152b) which transports a source gas fed out from the raw material vessel, a supply pipe (155a) which is branched from the transport pipe and supplies the source gas to a film forming chamber (101), a circulation pipe (155b) which is branched from the transport pipe (152b) and returns the source gas to the introduction pipe (152a), an introduction valve (156a) which is attached to the introduction pipe, a supply valve (156b) which is attached to the supply pipe, a circulation valve (156c) which is attached to the circulation pipe, and a controller (157) which controls opening/closing of the valves. The controller controls the supply valve and the circulation valve to be in opposite open/closed states. The source gas can be supplied more stably while suppressing the waste of the raw material.

Abstract: Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).

Abstract: An atomic layer growing apparatus includes a film forming chamber (101) in which the vapor phase growth of a film is performed, a substrate table (102) having a heating mechanism accommodated in the film forming chamber (101), and an exhaust mechanism (104). The atomic layer growing apparatus also includes a material supply unit (105) including a material vaporizer (151), two buffer tanks, i.e., a buffer tank A (152a) and buffer tank B (152b), a fill valve A (153a) and supply valve A (154a) of the buffer tank A (152a), a fill valve B (153b) and supply valve B (154b) of the buffer tank B (152b), an injection control valve (155), and a control unit (156) which controls the opening/closing of each valve.