Abstract: A display device that includes a reflective electrode; a transparent electrode; a partition; an EL layer formed over the partition and the transparent electrode; a semi-transmissive electrode formed over the EL layer; and a coloring layer over the semi-transmissive electrode. A light-emitting region is formed to overlap with the transparent electrode, the EL layer, the semi-transmissive electrode, and the coloring layer. A non-light-emitting region is formed to overlap with the transparent electrode, the partition, the EL layer, and the coloring layer. The non-light-emitting region is formed to surround the light-emitting region. The sum of the optical length of the transparent electrode and the optical length of the EL layer is adjusted to fulfil a condition of a microcavity intensifying light of the color of the coloring layer. The optical length of the partition in the non-light-emitting region is adjusted to weaken external light incident through the coloring layer.

Abstract: To inhibit surface reflection of a display device. A display device which includes a reflective electrode layer 110; a partition 118 formed to surround the reflective electrode layer; a layer 120 containing a light-emitting organic compound and formed over the partition and the reflective electrode layer; a semi-transmissive electrode layer 122 formed over the layer containing the light-emitting organic compound; and a coloring layer 162 formed over the semi-transmissive electrode layer. The coloring layer overlaps with the reflective electrode layer and the partition. The partition does not overlap with the reflective electrode layer.

Abstract: A light-emitting element, a light-emitting module, a light-emitting panel, or a light-emitting device in which loss due to electrical resistance is reduced is provided. The present invention focuses on a surface of an electrode containing a metal and on a layer containing a light-emitting organic compound. The layer containing a light-emitting organic compound is provided between one electrode including a first metal, whose surface is provided with a conductive inclusion, and the other electrode.

Abstract: One object is to provide a light-emitting element which overcomes the problems of electrical characteristics and a light reflectivity have been solved. The light-emitting element is manufactured by forming a first electrode including aluminum and nickel over a substrate; by forming a layer including a composite material in which a metal oxide is contained in an organic compound so as to be in contact with the first electrode after heat treatment is performed with respect to the first electrode; by forming a light-emitting layer over the layer including a composite material; and by forming a second electrode which has a light-transmitting property over the light-emitting layer. Further, the first electrode is preferably formed to include the nickel equal to or greater than 0.1 atomic % and equal to or less than 4.0 atomic %.

Abstract: Color purity of a light emitting element is improved without an adverse effect such as reduction in voltage and luminance efficiency. The light emitting element has a light emitting laminated body including a light emitting layer between a pair of electrodes. A buffer layer is provided to be in contact with at least one of the electrodes. One of the electrodes is an electrode having high reflectance and the other is a translucent electrode. By employing a translucent electrode, light can be transmitted and reflected. An optical distance between the electrodes is adjusted in accordance with a thickness of the buffer layer, and accordingly, light can be resonated between the electrodes. The buffer layer is made of a composite material including an organic compound and a metal compound; therefore, voltage and luminance efficiency of the light emitting element is not affected even if a distance between the electrodes becomes long.

Abstract: A light-emitting element, a light-emitting module, a light-emitting panel, or a light-emitting device in which loss due to electrical resistance is reduced is provided. The present invention focuses on a surface of an electrode containing a metal and on a layer containing a light-emitting organic compound. The layer containing a light-emitting organic compound is provided between one electrode including a first metal, whose surface is provided with a conductive inclusion, and the other electrode.

Abstract: Color purity of a light emitting element is improved without an adverse effect such as reduction in voltage and luminance efficiency. The light emitting element has a light emitting laminated body including a light emitting layer between a pair of electrodes. A buffer layer is provided to be in contact with at least one of the electrodes. One of the electrodes is an electrode having high reflectance and the other is a translucent electrode. By employing a translucent electrode, light can be transmitted and reflected. An optical distance between the electrodes is adjusted in accordance with a thickness of the buffer layer, and accordingly, light can be resonated between the electrodes. The buffer layer is made of a composite material including an organic compound and a metal compound; therefore, voltage and luminance efficiency of the light emitting element is not affected even if a distance between the electrodes becomes long.

Abstract: A semiconductor device including an oxide semiconductor and an organic resin film is manufactured in the following manner. Heat treatment is performed on a first substrate provided with an organic resin film over a transistor including an oxide semiconductor in a reduced pressure atmosphere; handling of the first substrate is performed in an atmosphere containing moisture as little as possible in an inert gas (e.g., nitrogen) atmosphere with a dew point of lower than or equal to ?60° C., preferably with a dew point of lower than or equal to ?75° C. without exposing the first substrate after the heat treatment to the air; and then, the first substrate is bonded to a second substrate that serves as an opposite substrate.

Abstract: An object is to reduce variations in programming behavior from memory element to memory element. Furthermore, an object is to obtain a semiconductor device with excellent writing characteristics and in which the memory element is mounted. The memory element includes a first conductive layer, a metal oxide layer, a semiconductor layer, an organic compound layer, and a second conductive layer, where the metal oxide layer, the semiconductor layer, and the organic compound layer are interposed between the first conductive layer and the second conductive layer; the metal oxide layer is provided in contact with the first conductive layer; and the semiconductor layer is provided in contact with the metal oxide layer. By use of this kind of structure, variations in programming behavior from memory element to memory element are reduced.

Abstract: One object is to provide a light-emitting element which overcomes the problems of electrical characteristics and a light reflectivity have been solved. The light-emitting element is manufactured by forming a first electrode including aluminum and nickel over a substrate; by forming a layer including a composite material in which a metal oxide is contained in an organic compound so as to be in contact with the first electrode after heat treatment is performed with respect to the first electrode; by forming a light-emitting layer over the layer including a composite material; and by forming a second electrode which has a light-transmitting property over the light-emitting layer. Further, the first electrode is preferably formed to include the nickel equal to or greater than 0.1 atomic % and equal to or less than 4.0 atomic %.

Abstract: An object is to provide a white light-emitting element which emits broad white light which is close to natural light and covers a wide wavelength range; that is, a white light-emitting element which has a broad spectrum waveform. Further, there are various different kinds of white light; however, in particular, an object is to provide a white light-emitting element which emits white light which is close to the standard white color of the NTSC. Over a substrate 100, a second light-emitting element 110 and a first light-emitting element 120 are stacked in series. The first light-emitting element 120 exhibits a light emission spectrum having two peaks (two peaks in the blue to green wavelength range) and is disposed close to a film of light-reflecting material. The second light-emitting element 110 exhibits a light emission spectrum having a peak in the orange to red wavelength range, and is disposed in a position which is not close to the film of light-reflecting material.

Abstract: It is an object of the present invention to reduce variations in behavior of each memory element. In addition, it is another object of the present invention to obtain a semiconductor device, on which the memory element is mounted, which is superior in terms of performance and reliability. A memory element of the present invention includes in its structure a first conductive layer; a semiconductor layer; an organic compound layer; and a second conductive layer, where the semiconductor layer and the organic compound layer are interposed between the first conductive layer and the second conductive layer, and the semiconductor layer is formed to be in contact with the first conductive layer and/or the second conductive layer. With such a structure, variations in behavior of each memory element are reduced.

Abstract: One object is to provide a light-emitting element which overcomes the problems of electrical characteristics and a light reflectivity have been solved. The light-emitting element is manufactured by forming a first electrode including aluminum and nickel over a substrate; by forming a layer including a composite material in which a metal oxide is contained in an organic compound so as to be in contact with the first electrode after heat treatment is performed with respect to the first electrode; by forming a light-emitting layer over the layer including a composite material; and by forming a second electrode which has a light-transmitting property over the light-emitting layer. Further, the first electrode is preferably formed to include the nickel equal to or greater than 0.1 atomic % and equal to or less than 4.0 atomic %.

Abstract: A high-quality light-emitting device having low power consumption, capability of emitting light of a bright color, and less luminance unevenness is provided. Provided is a light-emitting device in which a plurality of light-emitting units each include a light-emitting element which includes a layer (EL layer) containing an organic compound between a first electrode and a second electrode. The first electrode is separated between light-emitting elements. The EL layer includes a layer (light-emitting layer) containing a light-emitting substance and a layer containing a donor substance and an acceptor substance provided between the first electrode and the light-emitting layer. An inversely tapered partition is provided only between adjacent light-emitting units emitting light of different colors.

Abstract: A light-emitting element, a light-emitting module, a light-emitting panel, or a light-emitting device in which loss due to electrical resistance is reduced is provided. The present invention focuses on a surface of an electrode containing a metal and on a layer containing a light-emitting organic compound. The layer containing a light-emitting organic compound is provided between one electrode including a first metal, whose surface is provided with a conductive inclusion, and the other electrode.

Abstract: A light-emitting element disclosed includes a first electrode layer; a second electrode layer which transmits light; and a light-emitting layer interposed between the first electrode layer and the second electrode layer. The first electrode layer includes a first conductive layer which is able to reflect light, a second conductive layer provided over the first conductive layer and including titanium, and a third conductive layer which transmits light and contains a metal oxide having work function higher than that of a material of the first conductive layer.

Abstract: In a semiconductor device including an organic layer containing a light-emitting substance between a first electrode connected to a source or drain electrode layer of an enhancement-type transistor that has a channel formation region using an oxide semiconductor and a second electrode overlapped with the first electrode, an active, electrically conductive material which produces a hydrogen ion or a hydrogen molecule by reducing an impurity including a hydrogen atom (e.g., moisture) is excluded from the second electrode. The semiconductor device including an oxide semiconductor is formed using especially an inert, electrically conductive material which hardly causes production a hydrogen ion or a hydrogen molecule by reacting with water. Specifically, the semiconductor device is formed using any of a metal, an alloy of metals, and a metal oxide each having a higher oxidation-reduction potential than the standard hydrogen electrode.

Abstract: An object is to provide a white light-emitting element which emits broad white light which is close to natural light and covers a wide wavelength range; that is, a white light-emitting element which has a broad spectrum waveform. Further, there are various different kinds of white light; however, in particular, an object is to provide a white light-emitting element which emits white light which is close to the standard white color of the NTSC. Over a substrate 100, a second light-emitting element 110 and a first light-emitting element 120 are stacked in series. The first light-emitting element 120 exhibits a light emission spectrum having two peaks (two peaks in the blue to green wavelength range) and is disposed close to a film of light-reflecting material. The second light-emitting element 110 exhibits a light emission spectrum having a peak in the orange to red wavelength range, and is disposed in a position which is not close to the film of light-reflecting material.

Abstract: To simply provide a flexible light-emitting device with long lifetime. To provide a flexible light-emitting device with favorable display characteristics, high yield, and high reliability without display unevenness.

Abstract: One object is to provide a light-emitting element which overcomes the problems of electrical characteristics and a light reflectivity have been solved. The light-emitting element is manufactured by forming a first electrode including aluminum and nickel over a substrate; by forming a layer including a composite material in which a metal oxide is contained in an organic compound so as to be in contact with the first electrode after heat treatment is performed with respect to the first electrode; by forming a light-emitting layer over the layer including a composite material; and by forming a second electrode which has a light-transmitting property over the light-emitting layer. Further, the first electrode is preferably formed to include the nickel equal to or greater than 0.1 atomic % and equal to or less than 4.0 atomic %.