Abstract: A body of semiconductor material has a surface and accommodates an active area, conductive regions, a first deep insulation structure extending in the active area from the surface of the body in a first trench, and a second deep insulation structure extending in the active area from the surface of the body in a second trench and surrounding the conductive regions. The first deep insulation structure has insulation walls surrounding a conductive filling portion. The second deep insulation structure has a solid insulating region filling the second trench. The first deep insulation region has a first width and a first depth and the second deep insulation structure has a second width and a second depth. The second width is smaller than the first width and the second depth is smaller than the first depth.

Abstract: A method is for forming a vertical interconnection through a dielectric layer between upper and lower electrically conductive layers of an integrated circuit. The method includes forming an opening through the dielectric layer and placing a solidifiable electrically conductive filler into the opening via a printing technique. The solidifiable electrically conductive filler is solidified to thereby form a solidified electrically conducting filler in the opening. A metallization layer is formed over the dielectric layer and the solidified electrically conducting filler to thereby form the vertical interconnection through the dielectric layer between the upper and lower electrically conductive layers of the integrated circuit.

Abstract: A method is for forming a vertical interconnection through a dielectric layer between upper and lower electrically conductive layers of an integrated circuit. The method includes forming an opening through the dielectric layer and placing a solidifiable electrically conductive filler into the opening via a printing technique. The solidifiable electrically conductive filler is solidified to thereby form a solidified electrically conducting filler in the opening. A metallization layer is formed over the dielectric layer and the solidified electrically conducting filler to thereby form the vertical interconnection through the dielectric layer between the upper and lower electrically conductive layers of the integrated circuit.

Abstract: A proton exchange membrane for electrolyte cells includes a polyelectrolyte polymer membrane comprising a sulfonated copolymer based on the following formula (I): wherein n is an integer between 1 and 1,000,000, and m is an integer between 1 and 1,000,000. A membrane-electrode assembly includes such a membrane.