Abstract: Aspects concern a method for identifying a list of nearest vehicles including receiving a ride request comprising a request position; obtaining vehicle information of a plurality of vehicles, wherein the vehicle information comprises a vehicle position; translating the vehicle position information of each of the plurality of vehicles to positions on an edge based graph, wherein the edge based graph represents a road system; and determining a driving distance between at least one of the vehicle positions of the plurality of vehicles and the request position, wherein the driving distance comprises a distance the at least one vehicle travels along the road system to reach the request position.

Abstract: The present disclosure provides methods, devices and systems for route deviation quantification and vehicular route learning based thereon. In some examples, there is provided a method for route deviation quantification of a suggested route. The method comprises: obtaining a ground truth route based on a filtered trajectory, the filtered trajectory including an inferred location of origin and an inferred location of destination; obtaining a suggested route generated based on the inferred location of origin and the inferred location of destination; quantifying a deviation of the suggested route from the ground truth route by calculating an off course ratio based on a combined length of road segments in the suggested route that are matched to corresponding road segments in the ground truth route and a combined length of road segments in the ground truth route.

Abstract: Disclosed by the present invention are an aqueous polyurethane functional mask substrate and an application thereof. Two kinds of water-based polyurethane dispersions are used as the main components of the mask substrate. The transdermal penetration and absorption of functional ingredients such as whitening, moisturizing and anti-aging ingredients in facial mask products are promoted by means of the special cross-linked structures of polyurethane films. During use, a mask is evenly applied to the face; and after the mask dries, the entire mask may be removed directly or removed after being moistened using water. The mask substrate according to the present invention is also applicable to body masks such as a hand mask, a neck mask and a back mask.

Abstract: An inductor and a method of forming the same are provided. The inductor includes a patterned wire structure. The patterned wire structure includes a conductive core, a dielectric film and a magnetic shell. The conductive core includes a pair of end surfaces and an outer surface between the pair of end surfaces. The dielectric film covers the outer surface. The magnetic shell covers the dielectric film. The dielectric film is between the conductive core and the magnetic shell.

Abstract: Techniques are provided for performing an RFID-based localization and mapping of an environment. In one embodiment, the techniques involve generating identifying information of a first virtual object based on a RFID tag scan, retrieving a first virtual object model or a first object model data based on the identifying information of the first virtual object, generating display data of the first virtual object model or the first object model data relative to a position of an augmented reality system, and rendering the first virtual object model or the first object model data on a display based on the display data.

Abstract: A memory device including a word line, a source line, a bit line, a memory layer, a channel material layer is described. The word line extends in a first direction, and liner layers disposed on a sidewall of the word line. The memory layer is disposed on the sidewall of the word line between the liner layers and extends along sidewalls of the liner layers in the first direction. The liner layers are spaced apart by the memory layer, and the liner layers are sandwiched between the memory layer and the word line. The channel material layer is disposed on a sidewall of the memory layer. A dielectric layer is disposed on a sidewall of the channel material layer. The source line and the bit line are disposed at opposite sides of the dielectric layer and disposed on the sidewall of the channel material layer. The source line and the bit line extend in a second direction perpendicular to the first direction. A material of the liner layers has a dielectric constant lower than that of a material of the memory layer.

Abstract: A method for restoration of a kinetic event using video. The method includes obtaining video involving the kinetic event including a plurality of frames. An absolute location of a frame of the plurality of frames is determined. Movement of a feature point cloud corresponding to an object in motion in the plurality of frames is analyzed. A 3D object model with substantially similar dimensions to the object in motion is selected. The 3D object model is displayed emulating the analysed movement on the 3D map based on the absolute location.

Abstract: A memory device includes a substrate, a reference layer, a tunneling layer, a film stack, and a capping layer. The reference layer is disposed on the substrate. The tunneling layer is disposed on the reference layer. The film stack is formed over the tunneling layer and on the substrate, wherein the film stack includes a first free layer, a spacer with high exchange stiffness constant and a second free layer. The first free layer is in contact with the tunneling layer and the film stack. The spacer with high exchange stiffness constant is sandwiched between the first free layer and the second free layer. The capping layer is disposed on and electrically connected to the film stack.

Abstract: A method of forming a semiconductor device includes forming a fin on a substrate, the fin comprising alternately stacked first semiconductor layers and second semiconductor layers, removing the first semiconductor layers to form a plurality of spaces each between adjacent two of the second semiconductor layers, implanting oxygen into the second semiconductor layers, and forming a gate structure wrapping around the second semiconductor layers.

Abstract: The present disclosure provides a method for topography simulation of a physical structure under a topography-changing process. The method includes initializing a voxel mesh as a three-dimensional (3D) representation of the physical structure, generating a batch of particles, simulating a flight path of at least one of the particles with a ray-tracing method, identifying a voxel unit in the voxel mesh that intersects the flight path, determining a surface reaction between the one of the particles and the voxel unit, and adding an extra voxel unit adjacent to the voxel unit based on the determining of the surface reaction.

Abstract: An exemplary method for semiconductor device simulation includes receiving a device structure, generating a mesh for the device structure, simulating electrical behavior of the device structure using the mesh, and adaptively adjusting the mesh during the simulating. The adaptively adjusting the mesh includes performing a multi-level restriction-prolongation (MLRP) process that decreases and increases a resolution of the mesh. The semiconductor device simulation can be performed by a semiconductor simulation system that includes a central processing unit, a memory, and a hardware accelerator. The MLRP process is at least partially parallelized on the hardware accelerator, such as a GPU.

Abstract: The present disclosure provides a method for topography simulation of a physical structure under a topography-changing process. The method includes initializing a voxel mesh as a three-dimensional (3D) representation of the physical structure, generating a batch of particles, simulating a flight path of one of the particles with a ray-tracing method by a parallel processing thread in a hardware accelerator, identifying a surface normal of a voxel unit in the voxel mesh that intersects the flight path by the parallel processing thread, determining a surface reaction between the one of the particles and the voxel unit by a central processing unit (CPU), and updating the voxel mesh based on the determining of the surface reaction.

Abstract: A memory device includes a substrate, a spin-orbit torque (SOT) layer, a magnetic tunneling junction (MTJ) film stack, a connecting via and a shielding structure. The SOT layer is disposed on the substrate. The MTJ film stack is formed over SOT layer and on the substrate. The connecting via is disposed on and electrically connected to the MTJ film stack. The shielding structure is laterally surrounding the MTJ film stack and disposed on the SOT layer, wherein the shielding structure includes a first dielectric layer, a high magnetic permeability layer and a second dielectric layer, the first dielectric layer is in contact with the SOT layer and the MTJ film stack, and the high magnetic permeability layer is sandwiched between the first dielectric layer and the second dielectric layer.

Abstract: A method includes: providing a substrate including a planar portion and a mesa portion over the planar portion; depositing an oxide layer over the mesa portion; depositing a ferroelectric material strip over the oxide layer and aligned with the mesa portion; and depositing a gate strip crossing the ferroelectric material strip and over the oxide layer.

Abstract: A memory device including a word line, a source line, a bit line, a memory layer, a channel material layer is described. The word line extends in a first direction, and liner layers disposed on a sidewall of the word line. The memory layer is disposed on the sidewall of the word line between the liner layers and extends along sidewalls of the liner layers in the first direction. The liner layers are spaced apart by the memory layer, and the liner layers are sandwiched between the memory layer and the word line. The channel material layer is disposed on a sidewall of the memory layer. A dielectric layer is disposed on a sidewall of the channel material layer. The source line and the bit line are disposed at opposite sides of the dielectric layer and disposed on the sidewall of the channel material layer. The source line and the bit line extend in a second direction perpendicular to the first direction. A material of the liner layers has a dielectric constant lower than that of a material of the memory layer.

Abstract: A memory device including a pair of magnetic conductive posts, a Spin-Hall-Effect-assisted (SHE-assisted) layer, and a magnetic tunneling junction (MTJ) structure. The Spin-Hall-Effect-assisted (SHE-assisted) layer is disposed over and electrically connected to the pair of magnetic conductive posts. The magnetic tunneling junction (MTJ) structure has in-plane magnetic anisotropy, wherein the MTJ structure is disposed on the SHE-assisted layer, and the pair of magnetic conductive posts provide an in-plane magnetic field during a write operation of the MTJ structure.

Abstract: A magnetic tunnel junction (MTJ) stack includes a reference layer, a tunnel barrier layer, a free layer, and a superparamagnetic layer. The reference layer has a fixed magnetization direction. The tunnel barrier layer is disposed on the reference layer, and includes an insulating material. The free layer has a changeable magnetization direction, and is disposed on the tunnel barrier layer opposite to the reference layer. The superparamagnetic layer is disposed on the free layer opposite to the tunnel barrier layer. Methods for manufacturing the MTJ stack are also disclosed.

Abstract: Provided is a drug combination for prevention and/or treatment of tumors. The drug combination includes: a) an ascorbic acid or a derivative thereof in an amount effective for prevention and/or treatment, and b) a selective PDE4 inhibitor in an amount effective for prevention and/or treatment.

Abstract: The present invention relates to a multifunctional scalp massager, has a handle and a plurality of elastic massage claws arranged along the circumference of the handle, each elastic massage claw is formed in an arc shape, and a massage portion is arranged at the end of each elastic massage claw away from the handle; the elastic massage claws have a plurality of elastic massage claws with different arc lengths and radians, and the number of the elastic massage claws is at least 20, so that when the elastic massage claws are clamped on the human body, the claws of different lengths can touch different parts of the human body. The present invention has the advantages of good massage effect, capability of massaging different parts of the head and more plentiful functions.

Abstract: The present disclosure provides methods, devices and systems for route deviation quantification and vehicular route learning based thereon. In some examples, there is provided a method for route deviation quantification of a suggested route. The method comprises: obtaining a ground truth route based on a filtered trajectory, the filtered trajectory including an inferred location of origin and an inferred location of destination; obtaining a suggested route generated based on the inferred location of origin and the inferred location of destination; quantifying a deviation of the suggested route from the ground truth route by calculating an off course ratio based on a combined length of road segments in the suggested route that are matched to corresponding road segments in the ground truth route and a combined length of road segments in the ground truth route.