Abstract: An apparatus for detecting and recording insect flying activities, such as outside a bee hive, with a Doppler radar is described. Also described is a system including a plurality of apparatuses for detecting and recording insect flying activities, such as outside a bee hive, with a Doppler radar.

Abstract: An apparatus for detecting and recording insect flying activities, such as outside a bee hive, with a Doppler radar is described. Also described is a system including a plurality of apparatuses for detecting and recording insect flying activities, such as outside a bee hive, with a Doppler radar.

Abstract: The present invention provides a ZnO based tunable surface acoustic wave (SAW), preferably monolithically integrated tunable SAW (MITSAW) device. The MITSAW comprises a ZnO/MgxZn1−xO quantum well structure and piezoelectric ZnO thin film epitaxially grown on R-plane sapphire ((01{overscore (1)}2)Al2O3) substrate using MOCVD. R-plane sapphire provides in-plane anisotropy in the ZnO layer as the c-axis of ZnO lies in the growth plane. A two-dimensional electron gas (2DEG) is placed in the delay path of the SAW device and interacts with the lateral electric field resulting in ohmic loss which attenuates and slows the surface acoustic wave. This mechanism is used to tune the acoustic velocity. The high coupling coefficients offered by the ZnO/R-(Al2O3) system allows large velocity tuning. ZnO based MITSAW is used for chemical and biochemical sensors, offers excellent manufacturability, high yield and low cost. Such SAW sensors have a “resettable” sensing mechanism.

Abstract: The present invention provides a ZnO based tunable surface acoustic wave (SAW), preferably monolithically integrated tunable SAW (MITSAW) device. The MITSAW comprises a ZnO/MgxZn1−xO quantum well structure and piezoelectric ZnO thin film epitaxially grown on R-plane sapphire ((01{overscore (1)}2)Al2O3) substrate using MOCVD. R-plane sapphire provides in-plane anisotropy in the ZnO layer as the c-axis of ZnO lies in the growth plane. A two-dimensional electron gas (2DEG) is placed in the delay path of the SAW device and interacts with the lateral electric field resulting in ohmic loss which attenuates and slows the surface acoustic wave. This mechanism is used to tune the acoustic velocity. The high coupling coefficients offered by the ZnO/R-(Al2O3) system allows large velocity tuning. ZnO based MITSAW is used for chemical and biochemical sensors, offers excellent manufacturability, high yield and low cost. Such SAW sensors have a “resettable” sensing mechanism.

Abstract: The present invention provides a ZnO based tunable surface acoustic wave (SAW), preferably monolithically integrated tunable SAW (MITSAW) device. The MITSAW comprises a ZnO/Mgx Zn1−xO quantum well structure and piezoelectric ZnO thin film epitaxially grown on R-plane sapphire ((01{overscore (1)}2)Al2O3) substrate using MOCVD. R-plane sapphire provides in-plane anisotropy in the ZnO layer as the c-axis of ZnO lies in the growth plane. A two-dimensional electron gas (2DEG) is placed in the delay path of the SAW device and interacts with the lateral electric field resulting in ohmic loss which attenuates and slows the surface acoustic wave. This mechanism is used to tune the acoustic velocity. The high coupling coefficients offered by the ZnO/R-(Al2O3) system allows large velocity tuning. ZnO based MITSAW is used for chemical and biochemical sensors, offers excellent manufacturability, high yield and low cost. Such SAW sensors have a “resettable” sensing mechanism.

Abstract: A ZnO monolithically integrated tunable surface acoustic wave (MITSAW) device uses tunable acousto-electric and acouso-optic interaction between surface acoustic waves (SAW) and a two dimensional electron gas (2DEG) in a ZnO/MgxZn1−xO quantum well. The high electromechanical coupling coefficients of piezoelectric ZnO in conjunction with the low acoustic loss and high velocity of sapphire (Al2O3) offers high frequency and low loss RF applications. The 2DEG interacts with the lateral electric field resulting in ohmic loss which attenuates and slows the surface acoustic wave. This mechanism is used to tune the acoustic velocity. The high coupling coefficients offered by the ZnO/R—(Al2O3) systems allows large velocity tuning. Combined with the optical characteristics of the wide and direct band gap (about 3.3 eV) semiconductor and transparent ZnO electrodes, the MITSAW chip can be used for UV optical signal processing.

Abstract: A ZnO monolithically integrated tunable surface acoustic wave (MITSAW) device uses tunable acousto-electric and acouso-optic interaction between surface acoustic waves (SAW) and a two dimensional electron gas (2DEG) in a ZnO/MgxZn1-xO quantum well. The high electromechanical coupling coefficients of piezoelectric ZnO in conjunction with the low acoustic loss and high velocity of sapphire (Al2O3) offers high frequency and low loss RF applications. The 2DEG interacts with the lateral electric field resulting in ohmic loss which attenuates and slows the surface acoustic wave. This mechanism is used to tune the acoustic velocity. The high coupling coefficients offered by the ZnO/R-(Al2O3) systems allows large velocity tuning. Combined with the optical characteristics of the wide and direct band gap (about 3.3 eV) semiconductor and transparent ZnO electrodes, the MITSAW chip can be used for UV optical signal processing.

Abstract: MITSAW devices use tunable acousto-electric and acousto-optic interaction between surface acoustic waves (SAW) and a two dimensional electron gas (2DEG) in a ZnO/MgxZn1−xO quantum well to tune acoustic velocity in the SAW delay line. The MITSAW comprises a ZnO/MgxZn1−xO quantum well structure and piezoelectric ZnO thin films grown on R-plane sapphire (Al2O3) substrate using MOCVD. R-plane sapphire provides in-plane anisotropy in the ZnO layer. The 2DEG is placed in the delay path of the SAW device and interacts with the lateral electric field resulting in ohmic loss which attenuates and slows the surface acoustic wave. This mechanism is used to tune the acoustic velocity. The high coupling coefficients offered by the ZnO/R—(Al2O3) systems allows large velocity tuning. ZnO based MITSAW is used for chemical and biochemical sensors, offers excellent manufacturability, high yield and low cost. Such SAW sensors have a “resettable” sensing mechanism.