Abstract: Systems and methods for using NFT disc test structures for controlling NFT disc length during manufacture of an HAMR writer are disclosed. An NFT is manufactured concurrently with one or more pairs of pin-disc and disc-less test structures. The NFT disc and pin dimensions may be substantially similar to the pin and disc dimensions of the pin-disc test structure. The disc length of the pin-disc test structure is measured as a function of the difference in resistance between the two test structures and other parameters. Capturing the disc length variation subsequently enables adjustment of the NFT electronic lapping guide stripe height to reduce length variation in the NFT pin.

Abstract: A slider bar apparatus, and a method for lapping a back side surface of the slider bar, is provided. The slider bar includes a head part and a pair of sliders separated by the head part. Each of the sliders has an air bearing surface (ABS) and a back side surface opposite the ABS. Each of the sliders has a reader element and a writer element of a magnetic head for use in a magnetic hard disk drive. An electrical lapping guide is mounted on the back side surface and has a pair of terminals and a conductive material extending between the terminals. The conductive material is arranged on the slider bar such that the resistance between the terminals increases during a lapping of the back side of the sliders.

Abstract: A system for providing transducer(s) including a disk structure and having an air-bearing surface (ABS) are described. The disk structure resides a distance from the ABS and has a disk dimension substantially perpendicular to the ABS. Lapping control and disk windage ELGs are provided. The lapping control ELG has first and second edges first and second distances from the ABS. The disk windage ELG has edges different distances from the ABS. A difference between these edges corresponds to the disk dimension. A windage resistance of the disk windage ELG is measured and a disk windage determined. The disk windage corresponds to a difference between designed and actual disk dimensions perpendicular to the ABS. A lapping ELG target resistance is determined based on the disk windage. The transducer is lapped. Lapping is terminated based on a resistance of the lapping control ELG and the lapping ELG target resistance.

Abstract: Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

Abstract: An apparatus and associated method for a multi-bit memory capable of being selected with a magnetic layer. Various embodiments of the present invention are generally directed to a first selection layer with a low coercivity that is disposed between first and second storage layers that each have a high coercivity. In response to magnetic saturation of the first selection layer, programming of a logical state to the second storage layer is allowed.

Abstract: A method and system for providing transducer(s) including a disk structure and having an air-bearing surface (ABS) are described. The disk structure resides a distance from the ABS and has a disk dimension substantially perpendicular to the ABS. Lapping control and disk windage ELGs are provided. The lapping control ELG has first and second edges first and second distances from the ABS. The disk windage ELG has edges different distances from the ABS. A difference between these edges corresponds to the disk dimension. A windage resistance of the disk windage ELG is measured and a disk windage determined. The disk windage corresponds to a difference between designed and actual disk dimensions perpendicular to the ABS. A lapping ELG target resistance is determined based on the disk windage. The transducer is lapped. Lapping is terminated based on a resistance of the lapping control ELG and the lapping ELG target resistance.

Abstract: Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

Abstract: Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

Abstract: An electronic device that includes a first programmable metallization cell (PMC) that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode; and a second PMC that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode, wherein the first and second PMCs are electrically connected in anti-parallel.

Abstract: A method of fabricating a discrete track magnetic recording media. A base layer is provided onto which repeating and alternating magnetic layer and non-magnetic layers are deposited. The thickness of the magnetic layer corresponds to the width of the track of the recording media. A cylindrical rod can be used as the base layer, such that the alternating magnetic and non-magnetic layers spiraling or concentric layers around the rod. The resulting media layer can be cut or sliced into individual magnetic media or used to imprint other media discs with the discrete pattern of the media layer.

Abstract: A method of fabricating a recording head includes depositing an insulator material onto at least a portion of a first member, wherein the insulator material forms an insulator film having a film thickness. The method further includes depositing a writer pole material onto the insulator film, wherein the writer pole material forms a writer pole member, and wherein the insulator film is between the writer pole member and a contact layer. Further, in some embodiments, the film thickness determines the distance between the writer pole member and the first contact member and also determines the distance between the writer pole member and the second contact member.

Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

Abstract: A method of fabricating a discrete track magnetic recording media. A base layer is provided onto which repeating and alternating magnetic layer and non-magnetic layers are deposited. The thickness of the magnetic layer corresponds to the width of the track of the recording media. A cylindrical rod can be used as the base layer, such that the alternating magnetic and non-magnetic layers spiraling or concentric layers around the rod. The resulting media layer can be cut or sliced into individual magnetic media or used to imprint other media discs with the discrete pattern of the media layer.

Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

Abstract: A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.

Abstract: A method of fabricating a recording head includes depositing an insulator material onto at least a portion of a first member, wherein the insulator material forms an insulator film having a film thickness. The method further includes depositing a writer pole material onto the insulator film, wherein the writer pole material forms a writer pole member, and wherein the insulator film is between the writer pole member and a contact layer. Further, in some embodiments, the film thickness determines the distance between the writer pole member and the first contact member and also determines the distance between the writer pole member and the second contact member.

Abstract: A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.

Abstract: An apparatus and associated method for a multi-bit memory capable of being selected with a magnetic layer. Various embodiments of the present invention are generally directed to a first selection layer with a low coercivity that is disposed between first and second storage layers that each have a high coercivity. In response to magnetic saturation of the first selection layer, programming of a logical state to the second storage layer is allowed.

Abstract: A non-volatile memory cell and method of use thereof. In some embodiments, an individually programmable resistive sense memory (RSM) element is connected in series with a programmable metallization cell (PMC) switching element. In operation, while the switching element is programmed to a first resistive state, no current passes through the RSM element and while a second resistive state is programmed to the RSM element, current passes through the RSM element.

Abstract: A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.