Abstract: In an embodiment a power supply system includes a low voltage DC/DC converter (LDC) configured to convert a high voltage into a low voltage, a main battery configured to be charged by the LDC and to supply power to a junction block divided into an essential load part and a general load part, a control block comprising a first power switch configured to control power between the LDC and the junction block, a second power switch configured to control the power between the main battery and the junction block, and a load switch configured to selectively cut off the power to the general load part and an auxiliary battery configured to selectively supply power to an auxiliary junction block.

Abstract: A substrate inspection apparatus inspecting substrates using a vision system, which includes a camera module and an illumination module, and a substrate treatment system including the substrate inspection apparatus are provided. The substrate treatment system includes: a first substrate treatment apparatus; a second substrate treatment apparatus; a transfer unit transporting a container with a plurality of substrates accommodated therein from the first substrate treatment apparatus to the second substrate treatment apparatus; and a substrate inspection apparatus inspecting the substrates, wherein the substrate inspection apparatus includes an illumination module, which illuminates in a direction where the substrates are located, a camera module, which acquires images related to the substrates when the substrates are illuminated, and a control module, which inspects the substrates based on the images.

Abstract: An input sensing unit includes a touch sensing unit, which includes a plurality of driving electrodes, a plurality of sensing electrodes, and a driving signal generating unit which provides driving signals to the driving electrodes. The sensing electrodes are insulated from and intersect the driving electrodes. The driving signal generating unit includes touch drivers connected to driving electrodes and a digital-to-analog converter configured to provide a first signal or a second signal, and each of the touch drivers is connected to a preset number of driving electrodes among the driving electrodes.

Abstract: A method and a system provide a computing device for each computing power based on prediction of computing power required for fully homomorphic encryption in a cloud environment. A computing device providing method may be performed by a computer device including at least one processor. The computer device may implement at least one node included in the cloud environment. The computing device providing method may include providing, to a client device, a management tool including an application function of a computing device that processes a homomorphic encryption operation, and recommending the computing device for processing of the homomorphic encryption operation requested through the management tool.

Abstract: A method for fabricating a semiconductor device includes: preparing a substrate; forming an isolation layer defining an active region in the substrate; forming a first insulation structure over the substrate, the first insulation structure defining a line-type opening that exposes the isolation layer and the active region; forming a plug pad through a Selective Epitaxial Growth (SEG) process over the exposed active regions; forming a second insulation structure inside the line-type opening, the second insulation structure defining a contact hole landing on the plug pad; and filling the contact hole with a contact plug.

Abstract: The present invention provides an infant carrier or article carrier that includes a support part configured to support an infant or an article, a leg part which is in the form of a leg, connected from both directions to the support part through an upper portion, and configured to connect the support part to a bottom surface disposed at a lower portion, a movement assisting part which is disposed above the leg part, connected from both directions to the support part, and configured to distribute the weight of the infant on the support part or the load of the article on the support part to correspond to a movement state of a user and adjust an angle to correspond to the movement state of the user in order to facilitate movement, a knee joint part which is in the form of a knee and has one side surface coupled to the movement assisting part disposed thereabove to allow the angle adjustment corresponding to the movement state and the other side surface coupled to the leg part disposed therebelow, and a bottom sur

Abstract: Provided are an optical display device protecting film and an optical display device comprising the same, the optical display device protecting film comprising: a first substrate layer; and a hard coating layer formed on the first substrate layer, wherein the substrate layer is made of a thermoplastic polyurethane film, and the first substrate layer has a thickness of 100 ?m to 200 ?m and has a Shore hardness of 95 A to 98 A.

Abstract: A method for fabricating a semiconductor device includes: preparing a substrate; forming an isolation layer defining an active region in the substrate; forming a first insulation structure over the substrate, the first insulation structure defining a line-type opening that exposes the isolation layer and the active region; forming a plug pad through a Selective Epitaxial Growth (SEG) process over the exposed active regions; forming a second insulation structure inside the line-type opening, the second insulation structure defining a contact hole landing on the plug pad; and filling the contact hole with a contact plug.

Abstract: A method for fabricating a semiconductor device includes: preparing a substrate; forming an isolation layer defining an active region in the substrate; forming a first insulation structure over the substrate, the first insulation structure defining a line-type opening that exposes the isolation layer and the active region; forming a plug pad through a Selective Epitaxial Growth (SEG) process over the exposed active regions; forming a second insulation structure inside the line-type opening, the second insulation structure defining a contact hole landing on the plug pad; and filling the contact hole with a contact plug.

Abstract: A method for fabricating a semiconductor device includes: preparing a substrate; forming an isolation layer defining an active region in the substrate; forming a first insulation structure over the substrate, the first insulation structure defining a line-type opening that exposes the isolation layer and the active region; forming a plug pad through a Selective Epitaxial Growth (SEG) process over the exposed active regions; forming a second insulation structure inside the line-type opening, the second insulation structure defining a contact hole landing on the plug pad; and filling the contact hole with a contact plug.

Abstract: A method for fabricating a semiconductor device includes: preparing a substrate; forming an isolation layer defining an active region in the substrate; forming a first insulation structure over the substrate, the first insulation structure defining a line-type opening that exposes the isolation layer and the active region; forming a plug pad through a Selective Epitaxial Growth (SEG) process over the exposed active regions; forming a second insulation structure inside the line-type opening, the second insulation structure defining a contact hole landing on the plug pad; and filling the contact hole with a contact plug.

Abstract: Provided are an optical display device protecting film and an optical display device comprising the same, the optical display device protecting film comprising: a first substrate layer; and a hard coating layer formed on the first substrate layer, wherein the substrate layer is made of a thermoplastic polyurethane film, and the first substrate layer has a thickness of 100 ?m to 200 ?m and has a Shore hardness of 95 A to 98 A.

Abstract: A method for fabricating a semiconductor device includes: forming a semiconductor structure including a pattern; forming an epitaxial layer having a first dopant concentration in the pattern; forming in-situ an interface layer having a second dopant concentration higher than the first dopant concentration, over the epitaxial layer; forming a metal silicide layer over the interface layer; and forming a metal plug over the metal silicide layer.

Abstract: A method for fabricating a semiconductor device includes: preparing a substrate; forming an isolation layer defining an active region in the substrate; forming a first insulation structure over the substrate, the first insulation structure defining a line-type opening that exposes the isolation layer and the active region; forming a plug pad through a Selective Epitaxial Growth (SEG) process over the exposed active regions; forming a second insulation structure inside the line-type opening, the second insulation structure defining a contact hole landing on the plug pad; and filling the contact hole with a contact plug.

Abstract: The present invention may relate to an optical sheet unit. According to an embodiment of the present invention, disclosed is an optical sheet unit comprising: a diffusion sheet for diffusing incident light such that the light can be uniformly emitted; a prism sheet unit arranged at the position facing the diffusion sheet to concentrate the light incident from the diffusion sheet; and a bonding layer formed between the prism sheet unit and the diffusion sheet to bond the entire surfaces of the prism sheet unit and the diffusion sheet facing each other.

Abstract: A method for fabricating a semiconductor device includes: forming a semiconductor structure including a pattern; forming an epitaxial layer having a first dopant concentration in the pattern; forming in-situ an interface layer having a second dopant concentration higher than the first dopant concentration, over the epitaxial layer; forming a metal silicide layer over the interface layer; and forming a metal plug over the metal silicide layer.

Abstract: A method for fabricating a semiconductor device includes: forming a semiconductor structure including a pattern; forming an epitaxial layer having a first dopant concentration in the pattern; forming in-situ an interface layer having a second dopant concentration higher than the first dopant concentration, over the epitaxial layer; forming a metal silicide layer over the interface layer; and forming a metal plug over the metal silicide layer.

Abstract: The present invention relates to an ink composition for 3D printing, a 3D printer and a method of controlling the 3D printer. An ink composition for 3D printing according to an aspect of the present invention may include surface-modified inorganic particles, a photocurable material crosslinked with the surface-modified inorganic particles and a photoinitiator which cures the photocurable material.

Abstract: A semiconductor device includes a substrate comprising a channel region and a recess, wherein the recess is located at both side of the channel region; a gate structure formed over the channel region; a first SiP layer covering bottom corners of the gate structure and the recess; and a second SiP layer formed over the first SiP layer and in the recess, wherein the second SiP layer has a phosphorus concentration higher than that of the first SiP layer.

Abstract: Disclosed is a hand drip coffee maker which includes: a support unit on which a storage container is seated; a ground coffee hopper which is installed on the support unit through a hopper holder, and accommodates ground coffee therein; a mounting post which is installed on the support unit; an arm unit which includes a link arm that is rotatably installed at an upper side of the mounting post so that a tip portion of the link arm is disposed to face the ground coffee hopper; a dripper nozzle which is mounted to the tip portion of the link arm so as to supply water into the ground coffee hopper; and a syrup nozzle which is mounted to the tip portion of the link arm so as to supply syrup into the storage container.