Abstract: A shock absorbing plate configured to absorb a shock between a first plate and a second plate stacked on the first plate in a vertical direction, positioned between the first plate and the second plate so that the first plate is apart from the second plate in the vertical direction, and having a circular shape when viewed in the vertical direction. When no pressure is applied to the shock absorbing plate, a vertical thickness of the shock absorbing plate is greatest at a center thereof and decreases from the center toward an outer edge thereof. A plurality of holes penetrate the shock absorbing plate in the vertical direction. A friction coefficient and an elastic modulus of the shock absorbing plate are less than a friction coefficient and an elastic modulus of each of the first plate and the second plate.

Abstract: A supercritical fluid processing apparatus including a supercritical fluid supply module including a gas liquefier to liquefy a gas transferred from a gas supply and provide a liquefied fluid, a storage tank to change the liquefied fluid to a supercritical state and store a supercritical fluid, and an internal pipe connecting the gas liquefier to the storage tank; an exhaust fluid supply module including an exhaust fluid liquefier including a regeneration storage tank to collect a first exhaust fluid from the storage tank, and a refrigerant pipe to liquefy the first exhaust fluid in the regeneration storage tank and maintain the liquefied first exhaust fluid at a predetermined temperature/pressure; a first exhaust pipe to transfer the first exhaust fluid from the storage tank to the exhaust fluid liquefier; and a resupply pipe to resupply the first exhaust fluid collected and liquefied in the exhaust fluid liquefier to the storage tank.

Abstract: Methods of forming vertical nonvolatile memory devices utilize carbon-blocking sacrificial capping layers to increase device yield by reducing the likelihood that one or more vertically-stacked layers of materials will lift-off during fabrication. These capping layers may be provided to cover carbon-containing sacrificial layers that are highly polymerized.

Abstract: Methods of forming vertical nonvolatile memory devices utilize carbon-blocking sacrificial capping layers to increase device yield by reducing the likelihood that one or more vertically-stacked layers of materials will lift-off during fabrication. These capping layers may be provided to cover carbon-containing sacrificial layers that are highly polymerized.