Abstract: Extended cavity diode laser devices and methods of fabrication are provided, wherein the diode laser devices comprise, in the longitudinal direction, an amplifier section, a passive propagation section, and a Bragg section. The amplifier section, the propagation section, and the Bragg section are arranged between a front facet and a rear facet, wherein an active layer is formed in of the amplifier section over the entire length of the amplifier section and, in the Bragg section, a surface grating extends over the entire length of the Bragg section, and the surface grating is formed by a plurality of grooves spaced apart from each other in the longitudinal direction.

Abstract: A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer.

Abstract: A simple, tuned monolithic integrated component for the generation of optical microwaves in the frequency range of from 0.5 GHz to the THz range by means of an optical microwave source, embodied as a multi-section semiconductor laser, the sections of which are such as to be independently electrically controlled, with a single mode DFB laser, driven above the laser threshold and at least one monolithic integrated (external) cavity, having a passive phase control section and an active section.

Abstract: A tuned monolithic integrated component for the generation of optical microwaves in the frequency range of from 0.5 GHz to the THz range by a multi-section semiconductor laser, the sections of which are embodied such as to be independently electrically controlled, with a single mode DFB laser driven above the laser threshold and at least one monolithic integrated (external) cavity, comprising a passive phase control section and an active section. The multi-section laser is defined by two facets, of which at least one has a reflectivity of >0. Passive and active sections are connected to the DFB section by means of a common waveguide, the active sections comprising means for amplification and the passive sections provided with means for changing the phase position of waves returning into the multi-section semiconductor laser.