Patents by Inventor Olaf M. J. van 't Erve
Olaf M. J. van 't Erve has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11997934Abstract: A method of laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on Bi2Se3/WS2 at room temperature, comprising the steps of applying a laser to the Bi2Se3/WS2, writing a submicron pixel, wherein the submicron pixel has a circular polarization, modifying the circular polarization, allowing the circular polarization to be tuned across a range of 39.9%, tuning photoluminescence intensity, and tuning photoluminescence peak position. A method of growing Bi2Se3/WS2 as a nano-material or two-dimensional heterostructure for laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on the Bi2Se3/WS2 heterostructure at room temperature.Type: GrantFiled: March 9, 2022Date of Patent: May 28, 2024Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Zachariah B. Hennighausen, Kathleen M. McCreary, Olaf M. J. van 't Erve, Berend T. Jonker
-
Patent number: 11894449Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.Type: GrantFiled: September 28, 2022Date of Patent: February 6, 2024Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M. J. van't Erve
-
Patent number: 11862716Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.Type: GrantFiled: September 28, 2022Date of Patent: January 2, 2024Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M. J. van 't Erve
-
Publication number: 20230264972Abstract: A nano-thin BixOySez low-temperature oxygen transporter membrane for oxygen transport, separation, and two-dimensional (2D) material manipulation comprising a material comprising a compound of BixOySez and R3m bismuth oxide (Bi2O3). A method of making a nano-thin BixOySez low-temperature oxygen transporter membrane for oxygen transport, separation, and two-dimensional (2D) material manipulation comprising providing an oxygen environment, providing Bi2Se3, processing the Bi2Se3 in the oxygen environment, incorporating oxygen, removing selenium, creating a structural change, and creating a compound of BixOySez and R3m bismuth oxide (Bi2O3), wherein the material transports oxygen at room temperature.Type: ApplicationFiled: February 23, 2023Publication date: August 24, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Zachariah B. Hennighausen, Bethany Hudak, Olaf M.J. van 't Erve, Madeleine Phillips
-
Patent number: 11605410Abstract: A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising an electronic memory logic element with four stable resistance states. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising a layer of a metamagnetic material, a layer of a nonmagnetic material on the layer of a metamagnetic material, and a layer of a ferromagnetic material on the layer of a nonmagnetic material. A method of making a metamagnetic tunneling-based spin valve device for multistate magnetic memory.Type: GrantFiled: June 29, 2021Date of Patent: March 14, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Olaf M. J. van 't Erve, Steven P. Bennett, Adam L. Friedman
-
Publication number: 20230028020Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.Type: ApplicationFiled: September 28, 2022Publication date: January 26, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M.J. van 't Erve
-
Publication number: 20230014134Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.Type: ApplicationFiled: September 28, 2022Publication date: January 19, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M.J. van 't Erve
-
Publication number: 20220367798Abstract: A method of laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on Bi2Se3/WS2 at room temperature, comprising the steps of applying a laser to the Bi2Se3/WS2, writing a submicron pixel, wherein the submicron pixel has a circular polarization, modifying the circular polarization, allowing the circular polarization to be tuned across a range of 39.9%, tuning photoluminescence intensity, and tuning photoluminescence peak position. A method of growing Bi2Se3/WS2 as a nano-material or two-dimensional heterostructure for laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on the Bi2Se3/WS2 heterostructure at room temperature.Type: ApplicationFiled: March 9, 2022Publication date: November 17, 2022Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Zachariah B. Hennighausen, Kathleen M. McCreary, Olaf M.J. van 't Erve, Berend T. Jonker
-
Patent number: 11476353Abstract: The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.Type: GrantFiled: November 21, 2017Date of Patent: October 18, 2022Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M. J. van 't Erve
-
Patent number: 11280856Abstract: A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.Type: GrantFiled: October 27, 2020Date of Patent: March 22, 2022Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
-
Patent number: 11156678Abstract: A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.Type: GrantFiled: February 13, 2019Date of Patent: October 26, 2021Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Olaf M. J. van't Erve, Enrique Cobas, Shu-Fan Cheng, Berend T. Jonker
-
Publication number: 20210327486Abstract: A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising an electronic memory logic element with four stable resistance states. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising a layer of a metamagnetic material, a layer of a nonmagnetic material on the layer of a metamagnetic material, and a layer of a ferromagnetic material on the layer of a nonmagnetic material. A method of making a metamagnetic tunneling-based spin valve device for multistate magnetic memory.Type: ApplicationFiled: June 29, 2021Publication date: October 21, 2021Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Olaf M.J. van 't Erve, Steven P. Bennett, Adam L. Friedman
-
Patent number: 11074950Abstract: A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising an electronic memory logic element with four stable resistance states. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising a layer of a metamagnetic material, a layer of a nonmagnetic material on the layer of a metamagnetic material, and a layer of a ferromagnetic material on the layer of a nonmagnetic material. A method of making a metamagnetic tunneling-based spin valve device for multistate magnetic memory.Type: GrantFiled: April 13, 2019Date of Patent: July 27, 2021Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Olaf M. J. van 't Erve, Steven P. Bennett, Adam L. Friedman
-
Publication number: 20210109171Abstract: A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.Type: ApplicationFiled: October 27, 2020Publication date: April 15, 2021Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
-
Publication number: 20200395156Abstract: Also disclosed herein is an article having a substrate and a layer of an FeRh alloy disposed on the substrate. The alloy has a continuous antiferromagnetic phase and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase. Also disclosed herein is a method of: providing an article having a substrate and a layer having a continuous phase of an antiferromagnetic FeRh alloy disposed on the substrate and directing an ion source at one or more portions of the alloy to create one or more discrete phases having a lower metamagnetic transition temperature than the continuous phase.Type: ApplicationFiled: June 11, 2020Publication date: December 17, 2020Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Steven P. Bennett, Cory D. Cress, Joseph Prestigiacomo, Olaf M. J. van 't Erve
-
Patent number: 10852370Abstract: A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.Type: GrantFiled: October 23, 2018Date of Patent: December 1, 2020Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
-
Patent number: 10663773Abstract: The spin-Hall effect can be used to modulate the linear polarization of light via the magneto-optical Kerr effect. A central area of an outer surface of an added layer atop a spin Hall material is illuminated while simultaneously passing a modulated electric current through the material, so that reflected light has a new linear polarization that differs from the initial linear polarization to a degree depending on the amplitude of the modulated electric current.Type: GrantFiled: October 29, 2018Date of Patent: May 26, 2020Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Olaf M. J. van 't Erve, Connie H. Li, Berend T. Jonker, Aubrey T. Hanbicki, Kathleen M. Mccreary
-
Publication number: 20190333559Abstract: A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising an electronic memory logic element with four stable resistance states. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising a layer of a metamagnetic material, a layer of a nonmagnetic material on the layer of a metamagnetic material, and a layer of a ferromagnetic material on the layer of a nonmagnetic material. A method of making a metamagnetic tunneling-based spin valve device for multistate magnetic memory.Type: ApplicationFiled: April 13, 2019Publication date: October 31, 2019Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Olaf M.J. van 't Erve, Steven P. Bennett, Adam L. Friedman
-
Publication number: 20190265312Abstract: A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.Type: ApplicationFiled: February 13, 2019Publication date: August 29, 2019Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Olaf M. J. van 't Erve, Enrique Cobas, Shu-Fan Cheng, Berend T. Jonker
-
Patent number: 10261139Abstract: A method of making a magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering, comprising providing a substrate comprising silicon wafers and thermal oxide, performing DC magnetron sputtering, back-sputtering the substrate, growing amorphous carbon on the substrate, sputtering and growing a first ferromagnetic metal surface on the amorphous carbon, annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface, forming a graphene film on the first ferromagnetic metal surface, wherein the first ferromagnetic metal surface comprises NiFe, sputtering and growing a second ferromagnetic film on the graphene film, and capping the second ferromagnetic film with a platinum layer.Type: GrantFiled: February 6, 2017Date of Patent: April 16, 2019Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Olaf M. J. van 't Erve, Enrique Cobas, Shu-Fan Cheng, Berend T. Jonker