Abstract: Aspects of the present disclosure relate to apparatus, systems, and methods of measuring edge ring distance for thermal processing chambers. In one example, the distance measured is used to determine a center position shift of the edge ring.

Abstract: Aspects of the present disclosure relate to apparatus, systems, and methods of measuring edge ring distance for thermal processing chambers. In one example, the distance measured is used to determine a center position shift of the edge ring.

Abstract: A method for controlling temperature in a thermal processing chamber includes determining temperature sensitivity profiles of one or more heating elements or zones for a substrate based on measurements of the substrate. The method also includes selecting a temperature offset value for each of the one or more heating elements or zones. The method also includes simulating the adjustment of each of the one or more zone offset values to a respective final adjusting value that achieves a predetermined goal. The method further includes adjusting the temperature offset values for each of the one or more heating elements to the respective final adjusted values.

Abstract: Embodiments of the present invention provide methods for edge film stack removal for use in fabricating photovoltaic devices. In one embodiment, the method includes providing a substrate having a film stack deposited thereon, the film stack comprising a transparent conductive layer, a silicon-containing layer, and a metal back contact layer, removing the metal back contact layer and the silicon-containing layer formed on a periphery region along a side of the substrate using an electromagnetic radiation delivered at a first energy level, and removing the transparent conductive layer formed on the periphery region along the side of the substrate using electromagnetic radiation delivered at a second energy level that is higher than the first energy level.