Abstract: Various examples related to power sources for implantable sensors and/or devices are provided. In one example, a device for implantation in a subject includes circuitry for sensing an observable parameter of the subject and a power source comprising a nanowired ultra-capacitor (NUC), the power source having a volume of 10 mm3 or less. The NUC can have a surface capacitance density in a range from about 25 mF/cm2 to about 29 mF/cm2 or greater. Such devices can be used for, e.g., ocular diagnostic sensors or other implantable sensors that may be constrained by size limitations.

Abstract: Various examples related to power sources for implantable sensors and/or devices are provided. In one example, a device for implantation in a subject includes circuitry for sensing an observable parameter of the subject and a power source comprising a nanowired ultra-capacitor (NUC), the power source having a volume of 10 mm3 or less. The NUC can have a surface capacitance density in a range from about 25 mF/cm2 to about 29 mF/cm2 or greater. Such devices can be used for, e.g., ocular diagnostic sensors or other implantable sensors that may be constrained by size limitations.

Abstract: A capacitor device having a first conductive element and a second conductive element. The capacitor includes a porous membrane disposed between the first and second conductive elements. The capacitor has pores included in the porous membrane extending from the first conductive element to the second conductive element, and a conductive material is disposed inside the pores and in contact with the first conductive element.

Abstract: A capacitor device having a first conductive element and a second conductive element. The capacitor includes a porous membrane disposed between the first and second conductive elements. The capacitor has pores included in the porous membrane extending from the first conductive element to the second conductive element, and a conductive material is disposed inside the pores and in contact with the first conductive element.

Abstract: An automatic system for adjusting the output impedance of fast CMOS drivers, wherein the output impedance of a plurality of slaved drivers is adjusted by a circuit for measuring and correcting mismatch between the output impedance of one of the drivers, taken as reference and dedicated for this purpose, and the impedance at the input of a reference transmission line, equal in geometry to the lines connected to the other drivers. The voltage measured at the far end of the reference line is sent to a differential amplifier where it is compared with the supply voltage of the final driving stage. According to the comparison result at specific time intervals, a signal is supplied to the regulator which supplies power to the penultimate driving stage, thereby controlling the resistance of the driver to match the line impedance.