Abstract: A system and methods for substrate preparation are provided. In one example, a wafer processing system includes a system enclosure that contains wafer processing apparatus within an isolated wafer processing environment. The wafer processing apparatus include a pair of immersion tanks in the lower front region of the system with a pair of wafer pickers behind the immersion tanks to extract wafers from the tanks. In the rear of the system, a pair of brush boxes are located in a lower region with a pair of dryer units positioned above the brush boxes. A robot arm is positioned between the pair of immersion tanks and the pair of brush boxes in a middle region of the system, and is configured to transition wafers between the processing apparatus. A pair of output shelves holding output cassettes is positioned over the immersion tanks. The output cassettes receive clean wafers after processing.

Abstract: A cascaded disk scrubbing system and method are provided. The cascaded disk scrubbing system includes an array of rows of brush pairs. Each row includes a plurality of counter-rotating brush pairs that are arranged horizontally and longitudinally, and configured to receive and process a disk in a vertical orientation through disk preparation zones defined by each pair of brushes. Below and between the pairs of brushes is a track that is configured to apply a rotation to the disk and to transition the disk in a vertical orientation through the brush pairs. Nozzles dispense fluids on and over the brush pairs, and the brush pairs are configured such that fluids are dispensed through the brush pairs. Nozzles dispense a curtain of fluid between each disk preparation zone, and the cascaded disk scrubbing system is configured to progress from dirtiest to cleanest as the disk transitions through each disk preparation zone.

Abstract: Methods for preparing semiconductor wafers are provided. A method includes disposing a pair of wafer preparation assemblies in an opposing relationship in an enclosure. Each of the wafer preparation assemblies having a first wafer preparation member and a second wafer preparation member. The method includes disposing a semiconductor wafer between the wafer preparation assemblies in a vertical orientation and rotating the wafer. The method also includes orienting the wafer preparation assemblies such that the first wafer preparation members contact opposing surfaces of the rotating wafer in an opposing relationship, and orienting the wafer preparation assemblies such that the second wafer preparation members contact opposing surfaces of the rotating wafer in an opposing relationship.

Abstract: Liquid is removed from wafers for drying a wafer that has been wet in a liquid bath. The wafer and the bath are separated at a controlled rate as the wafer is positioned in a gas-filled volume. The controlled rate is generally not less than the maximum rate at which a meniscus will form between the liquid bath and the surface of the wafer when the liquid bath and the wafer are separated. The gas-filled volume is defined by a hot chamber that continuously transfers thermal energy to the wafer in the gas-filled volume. Hot gas directed into the volume and across the wafer and out of the volume continuously transfers thermal energy to the wafer.

Abstract: A cascaded wafer scrubbing system and method are provided. The cascaded wafer scrubbing system includes an array of rows of brush pairs. Each row includes a plurality of counter-rotating brush pairs that are arranged horizontally and longitudinally, and configured to receive and process a wafer in a vertical orientation through wafer preparation zones defined by each pair of brushes. Below and between the pairs of brushes is a track that is configured to apply a rotation to the wafer and to transition the wafer in a vertical orientation through the brush pairs. Nozzles dispense fluids on and over the brush pairs, and the brush pairs are configured such that fluids are dispensed through the brush pairs. Nozzles dispense a curtain of fluid between each wafer preparation zone, and the cascaded wafer scrubbing system is configured to progress from dirtiest to cleanest as the wafer transitions through each wafer preparation zone.

Abstract: Liquid is removed from wafers for drying a wafer that has been wet in a liquid bath. The wafer and the bath are separated at a controlled rate as the wafer is positioned in a gas-filled volume. The controlled rate is generally not less than the maximum rate at which a meniscus will form between the liquid bath and the surface of the wafer when the liquid bath and the wafer are separated. The gas-filled volume is defined by a hot chamber that continuously transfers thermal energy to the wafer in the gas-filled volume. Hot gas directed into the volume and across the wafer and out of the volume continuously transfers thermal energy to the wafer.

Abstract: A system and methods for substrate preparation are provided. In one example, a wafer processing system includes a system enclosure that contains wafer processing apparatus within an isolated wafer processing environment. The wafer processing apparatus include a pair of immersion tanks in the lower front region of the system with a pair of wafer pickers behind the immersion tanks to extract wafers from the tanks. In the rear of the system, a pair of brush boxes are located in a lower region with a pair of dryer units positioned above the brush boxes. A robot arm is positioned between the pair of immersion tanks and the pair of brush boxes in a middle region of the system, and is configured to transition wafers between the processing apparatus. A pair of output shelves holding output cassettes is positioned over the immersion tanks. The output cassettes receive clean wafers after processing. In another example, a method for preparing a substrate is provided.

Abstract: Wafer preparation systems and methods for wafer preparation are provided. The wafer preparation system includes a scrubber unit and a dryer unit arranged vertically with the dryer unit above the scrubber unit. The scrubber unit is configured to receive a wafer for mechanical scrub cleaning, and the dryer unit is configured to receive the wafer from the scrubber unit for drying after the mechanical scrub cleaning. The cleaning and the drying are accomplished with the wafer in a vertical orientation. An edge holder attached to a lifter rod lifts the wafer through the scrubber unit to the dryer unit. The method for wafer preparation includes receiving a wafer in a scrubbing station and lifting the wafer internally from the scrubbing station to the drying station that is located above the scrubbing station in a vertical arrangement.

Abstract: Liquid is removed from batches of substrates by apparatus and methods for drying substrates that have been wet in an elongated liquid bath. The substrates are moved relative to the bath and an elongated gas-filled volume at rates of movement selected according to the location of the batches of substrates in the bath or the volume. As an example, the substrates and the bath are separated at a controlled rate to form a thin layer of liquid on each substrate as each substrate enters the gas-filled volume. The gas-filled volume is defined by an elongated hot chamber and hot gas directed into the volume and across the substrates and out of the volume continuously transfers thermal energy to the substrates . The flow rate of the gas into the volume is related to introduction of the substrates into the bath to avoid disturbing the liquid in the bath.

Abstract: Methods for preparing semiconductor wafers are disclosed. A method includes rotating a semiconductor wafer in a vertical orientation, and the wafer having first and second opposing surfaces. The method further includes contacting each of the first and second opposing surfaces of the wafer with a cylindrical wafer preparation member so as to define a substantially linear contact area. The cylindrical wafer preparation members are disposed in an opposing relationship such that the contact areas are defined at corresponding locations on the first and second opposing surfaces. Then, the method includes controlling at least one wafer preparation parameter to obtain a variable wafer material removal rate as the contact areas defined on the first and second opposing surfaces are moved from a first position to a second position. The variable wafer material removal rate being formulated to provide the wafer with a substantially uniform thickness.

Abstract: A system and methods for substrate preparation are provided. In one example, a wafer processing system includes a system enclosure that contains wafer processing apparatus within an isolated wafer processing environment. The wafer processing apparatus include a pair of immersion tanks in the lower front region of the system with a pair of wafer pickers behind the immersion tanks to extract wafers from the tanks. In the rear of the system, a pair of brush boxes are located in a lower region with a pair of dryer units positioned above the brush boxes. A robot arm is positioned between the pair of immersion tanks and the pair of brush boxes in a middle region of the system, and is configured to transition wafers between the processing apparatus. A pair of output shelves holding output cassettes is positioned over the immersion tanks. The output cassettes receive clean wafers after processing. In another example, a method for preparing a substrate is provided.

Abstract: Liquid is removed from disks by apparatus and methods for drying a disk that has been wet in a liquid bath. The disk and the bath are separated at a controlled rate to form a monolayer of liquid on the disk as the disk is positioned in a gas-filled volume. The separation may be by moving the disk out of the liquid bath, and the controlled rate is generally not less than the maximum rate at which a meniscus will form between the liquid bath and the surface of the disk when the liquid bath and the disk are separated. The gas-filled volume is defined by a hot chamber that continuously transfers thermal energy to the disk in the gas-filled volume. Hot gas directed into the volume and across the disk and out of the volume continuously transfers thermal energy to the disk. The directing of the gas out of the volume is independent of the separation of the bath and the disk.

Abstract: A substrate polishing system includes two hollow drums and motors for driving the drums in a reciprocating manner. An abrasive tape wound on supply and takeup rollers is introduced, with the supply roller mounted inside one of the drums and the takeup roller mounted inside the other drum. The abrasive tape exits the interior of each drum through a slot in the surface of the drum. Between the drums the abrasive tape passes over a platen having a bearing surface. A substrate is mounted in a carrier and forced against the abrasive tape where it overlies the bearing surface. The drums are rotated reciprocally, thereby causing the abrasive tape to move back and forth over the platen and polishing the substrate. After a substrate has been polished the tape is advanced a selected distance by indexing motors that are connected to the supply and takeup rollers.

Abstract: Liquid is removed from batches of substrates by apparatus and methods for drying substrates that have been wet in an elongated liquid bath. The substrates are moved relative to the bath and an elongated gas-filled volume at rates of movement selected according to the location of the batches of substrates in the bath or the volume. As an example, the substrates and the bath are separated at a controlled rate to form a thin layer of liquid on each substrate as each substrate enters the gas-filled volume. The gas-filled volume is defined by an elongated hot chamber and hot gas directed into the volume and across the substrates and out of the volume continuously transfers thermal energy to the substrates. The flow rate of the gas into the volume is related to introduction of the substrates into the bath to avoid disturbing the liquid in the bath.

Abstract: A self-aligning mandrel assembly is provided. The assembly includes a cylindrical inner core and a fulcrum disposed on an outer surface of the cylindrical inner core. A mandrel shell surrounds the cylindrical inner core. The mandrel shell has a wafer preparation material affixed to an outer surface thereof, and the mandrel shell is pivotably supported by the fulcrum such that the mandrel shell aligns with a surface of a substrate when the wafer preparation material contacts the surface of the substrate.

Abstract: An apparatus for preparing a semiconductor wafer is provided. The apparatus includes a wafer drive assembly having a pair of wafer drive rollers for rotating a semiconductor wafer in a vertical orientation. The wafer drive assembly is configured such that the wafer drive rollers are controllably movable from a first position to a second position. Also provided as part of the apparatus is a pair of wafer preparation assemblies movably disposed in an opposing relationship above the wafer drive assembly. Each of the wafer preparation assemblies has a first wafer preparation member and a second wafer preparation member. The wafer preparation assemblies being movable into a first position in which each of the first wafer preparation members is position to perform a first wafer preparation operation on the wafer and into a second position in which each of the second wafer preparation members is positioned to perform a second wafer preparation operation on the wafer.

Abstract: An apparatus for cleaning a wafer oriented vertically is provided. The apparatus includes a first brush and a second brush located horizontally from the first brush. During use, a wafer is oriented vertically the first and second brushes. The brushes are brought into contact with the wafer and rotated thereby engaging the wafer with rollers. By rotating the rollers, the wafer is also rotated. Liquid is sprayed towards the brushes and wafer. By orienting the wafer vertically, liquid and particulates contained therein readily fall from the water due to gravity. This is particularly advantageous when cleaning larger diameter wafers in which particulates must be removed from a larger wafer surface area.

Abstract: An apparatus for preparing a semiconductor wafer is provided. The apparatus includes a pair of drive rollers disposed so as to support a semiconductor wafer in a substantially vertical orientation. Each of the drive rollers is configured to be coupled to a drive belt for rotating the drive rollers. The apparatus further includes a pair of wafer preparation assemblies that is movably disposed in an opposing relationship. Each of the wafer preparation assemblies have a first wafer preparation member and a second wafer preparation member. The wafer preparation assemblies being movable into a first position in which each of the first wafer preparation members is positioned to perform a first wafer preparation operation on the wafer and into a second position in which each of the second wafer preparation members is positioned to perform a second wafer preparation operation on the wafer.

Abstract: A method and apparatus for cleaning a wafer oriented vertically is provided. The apparatus includes a first brush and a second brush located horizontally from the first brush. During unloading of the wafer after cleaning, the wafer is located vertically between the first and second brushes and on a pair of rollers. A finger tip located vertically above the region between the first and second brushes contacts an edge of the wafer and thus hold the wafer in the precise unloading position at which a wafer transfer robotic arm has been programmed to engage/disengage the wafer. Accordingly, the wafer is reliably and repeatedly engaged by the robotic arm.

Abstract: In a spin dryer for semiconductor wafers, the wafer is held beneath a platen with its active side (i.e., the side containing the components or circuitry) facing upward. One or more nozzles spray rinse water on the top surface of the wafer and the wafer is rotated to remove the excess rinse water, thereby drying the wafer. A splash guard adjacent the edge of the wafer insures that the excess rinse water thrown off by the spinning wafer is deflected downward where it cannot again come into contact with the active side of the wafer. The platen is rotated dry at the same time, with no rinse water being splashed back onto the active side of the wafer. The spin dryer also includes a separate section which cleans and dries the end-effector of the robot which inserts the wafer into the spin dryer while the wafer is being dried.