Abstract: Treating a reflective optical element (104) for the EUV wavelength range that has a reflective coating on a substrate. The reflective optical element in a holder (106) is irradiated with at least one radiation pulse of a radiation source (102) having a duration of between 1 ?s and 1 s. At least one radiation source (102) and the reflective optical element move relative to one another. Preferably, this is carried out directly after applying the reflective coating in a coating chamber (100). Reflective optical elements of this type are suitable in particular for use in EUV lithography or in EUV inspection of masks or wafers, for example.

Abstract: An optical system, in particular for a microlithographic projection exposure apparatus, with at least one mirror (200) which has an optically effective surface and, for electromagnetic radiation of a predefined operating wavelength impinging on the optically effective surface at an angle of incidence of at least 65° relative to the respective surface normal, has a reflectivity of at least 0.5. The mirror has a reflection layer (210) and a compensation layer (220) which is arranged above this reflection layer (210) in the direction of the optically effective surface. The compensation layer (220), for an intensity distribution generated in a pupil plane or a field plane of the optical system during operation thereof, reduces the difference between the maximum and the minimum intensity value by at least 20% compared to an analogous structure without the compensation layer.

Abstract: An optical system, in particular for a microlithographic projection exposure apparatus, with at least one mirror (200) which has an optically effective surface and, for electromagnetic radiation of a predefined operating wavelength impinging on the optically effective surface at an angle of incidence of at least 65° relative to the respective surface normal, has a reflectivity of at least 0.5. The mirror has a reflection layer (210) and a compensation layer (220) which is arranged above this reflection layer (210) in the direction of the optically effective surface. The compensation layer (220), for an intensity distribution generated in a pupil plane or a field plane of the optical system during operation thereof, reduces the difference between the maximum and the minimum intensity value by at least 20% compared to an analogous structure without the compensation layer.

Abstract: A mirror, in particular for a microlithographic projection exposure apparatus, has an optically effective surface, a mirror substrate (205, 305), a reflection layer (220, 320), which is configured to provide the mirror with a reflectivity of at least 50% for electromagnetic radiation with a predetermined operating wavelength incident on the optically effective surface (200a, 300a) at angles of incidence in relation to the respective surface normals of at least 65°, and a substrate protection layer (210, 310) which is arranged between the mirror substrate (205, 305) and the reflection layer (220, 320). The substrate protection layer has a transmission of less than 0.1% for EUV radiation.

Abstract: An optical element (14), in particular for EUV lithography, includes a substrate (15), a reflective coating (16) arranged on the substrate (15), and an electrically conductive coating (19) extending between the substrate and the reflective coating, and having at least one first layer (22a) under tensile stress and at least one second layer (22b) under compressive stress. The electrically conductive coating has at least one section (20) that extends on the substrate laterally beyond the reflective coating. Also disclosed is an optical assembly, in particular an EUV lithography system, provided with at least one optical element of this type.

Abstract: An EUV mirror has a multilayer arrangement applied on a substrate. The multilayer arrangement includes a first layer group having ten or more first layer pairs. Each first layer pair has a first layer composed of a high refractive index first layer material having a first layer thickness, has a second layer composed of a low refractive index second layer material having a second layer thickness and has a period thickness corresponding to the sum of the layer thicknesses of all the layers of a first layer pair. The layer thicknesses of one of the layer materials are defined, depending on the period number, by a simply monotonic first layer thickness profile function, e.g. by a linear, quadratic or exponential layer thickness profile function. The layer thicknesses of the other of the layer materials vary, depending on the period number, in accordance with a second layer thickness profile function.

Abstract: Treating a reflective optical element (104) for the EUV wavelength range that has a reflective coating on a substrate. The reflective optical element in a holder (106) is irradiated with at least one radiation pulse of a radiation source (102) having a duration of between 1 ?s and 1 s. At least one radiation source (102) and the reflective optical element move relative to one another. Preferably, this is carried out directly after applying the reflective coating in a coating chamber (100). Reflective optical elements of this type are suitable in particular for use in EUV lithography or in EUV inspection of masks or wafers, for example.

Abstract: The invention concerns a method of and an arrangement for determining the heating condition of a mirror in an optical system, in particular in a microlithographic projection exposure apparatus. In an embodiment the mirror is an EUV mirror and a method according to the invention comprises the following steps: deflecting at least one input measuring beam on to the mirror; ascertaining at least one optical parameter of at least one output measuring beam produced from the input measuring beam after interaction with the mirror; and determining the heating condition of the mirror on the basis of the parameter.

Abstract: A mirror, in particular for a microlithographic projection exposure apparatus, has an optically effective surface, a mirror substrate (205, 305), a reflection layer (220, 320), which is configured to provide the mirror with a reflectivity of at least 50% for electromagnetic radiation with a predetermined operating wavelength incident on the optically effective surface (200a, 300a) at angles of incidence in relation to the respective surface normals of at least 65°, and a substrate protection layer (210, 310) which is arranged between the mirror substrate (205, 305) and the reflection layer (220, 320). The substrate protection layer has a transmission of less than 0.1% for EUV radiation.

Abstract: An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror element has a substrate (1020) and a multilayer arrangement (1030) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV). The multilayer arrangement has a multiplicity of layer pairs having alternate layers composed of a high refractive index layer material and a low refractive index layer material, has an active layer (1040) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field, and has an electrode arrangement to generate the electric field acting on the active layer.

Abstract: A mirror (1) for EUV lithography includes a substrate (2) and a reflective coating (3, 4). The reflective coating has a first group (3) of layers (3a, 3b) and a second group (4) of layers (4a, 4b), wherein the first group and second group of layers (3a, 3b; 4a, 4b) reflect radiation having a used wavelength between 5 nm and 30 nm. The first group of layers is arranged between the substrate and the second group of layers, and a decoupling coating (6) is arranged between the first group and second group of layers, said decoupling coating optically decoupling the second group of layers from the first group of layers by preventing the radiation having the used wavelength from reaching the first group of layers. The reflective coating preferably has a correction layer (5) having a layer thickness variation for correcting the surface form of the mirror.

Abstract: A reflective optical element (50) having a substrate (52) and a multilayer system (51) that has a plurality of partial stacks (53), each with a first layer (54) of a first material and a second layer (55) of a second material. The first material and the second material differ from one another in refractive index at an operating wavelength of the optical element. Each of the partial stacks has a thickness (Di) and a layer thickness ratio (?i), wherein the layer thickness ratio is the quotient of the thickness of the respective first layer and the partial stack thickness (Di). In a first section of the multilayer system, for at least one of the two variables of partial stack thickness (Di) and layer thickness ratio (?i), the mean square deviation from the respective mean values therefor is at least 10% less than in a second section of the multilayer system.

Abstract: An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror element has a substrate (1020) and a multilayer arrangement (1030) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV). The multilayer arrangement has a multiplicity of layer pairs having alternate layers composed of a high refractive index layer material and a low refractive index layer material, has an active layer (1040) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field, and has an electrode arrangement to generate the electric field acting on the active layer.

Abstract: An EUV mirror has a multilayer arrangement applied on a substrate. The multilayer arrangement includes a first layer group having ten or more first layer pairs. Each first layer pair has a first layer composed of a high refractive index first layer material having a first layer thickness, has a second layer composed of a low refractive index second layer material having a second layer thickness and has a period thickness corresponding to the sum of the layer thicknesses of all the layers of a first layer pair. The layer thicknesses of one of the layer materials are defined, depending on the period number, by a simply monotonic first layer thickness profile function, e.g. by a linear, quadratic or exponential layer thickness profile function. The layer thicknesses of the other of the layer materials vary, depending on the period number, in accordance with a second layer thickness profile function.

Abstract: A reflective optical element (50) having a substrate (52) and a multilayer system (51) that has a plurality of partial stacks (53), each with a first layer (54) of a first material and a second layer (55) of a second material. The first material and the second material differ from one another in refractive index at an operating wavelength of the optical element. Each of the partial stacks has a thickness (Di) and a layer thickness ratio (?i), wherein the layer thickness ratio is the quotient of the thickness of the respective first layer and the partial stack thickness (Di). In a first section of the multilayer system, for at least one of the two variables of partial stack thickness (Di) and layer thickness ratio (?i), the mean square deviation from the respective mean values therefor is at least 10% less than in a second section of the multilayer system.

Abstract: An EUV mirror arrangement (100) has a multiplicity of mirror elements (110, 111, 112) which are arranged alongside one another and jointly form a mirror surface of the mirror arrangement. Each mirror element has a substrate (120) and a multilayer arrangement (130) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV), said multilayer arrangement comprising a multiplicity of layer pairs (135) having alternate layers composed of a high refractive index layer material and a low refractive index layer material. The multilayer arrangement has an active layer (140) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field. For each active layer provision is made of an electrode arrangement for generating an electric field acting on the active layer.

Abstract: A mirror (1) for EUV lithography includes a substrate (2) and a reflective coating (3, 4). The reflective coating has a first group (3) of layers (3a, 3b) and a second group (4) of layers (4a, 4b), wherein the first group and second group of layers (3a, 3b; 4a, 4b) reflect radiation having a used wavelength between 5 nm and 30 nm. The first group of layers is arranged between the substrate and the second group of layers, and a decoupling coating (6) is arranged between the first group and second group of layers, said decoupling coating optically decoupling the second group of layers from the first group of layers by preventing the radiation having the used wavelength from reaching the first group of layers. The reflective coating preferably has a correction layer (5) having a layer thickness variation for correcting the surface form of the mirror.

Abstract: An optical element (21) with a substrate (30) and a reflective coating (31). The coating (31) has, in particular for the reflection of EUV radiation, a plurality of layer pairs having alternate layers (33a, 33b) composed of a high refractive index material and a low refractive index material At least one active layer (34) composed of a magnetostrictive material is formed within the reflective coating (31). Also disclosed is an optical element (21) having a substrate (30) and a reflective coating (31). The optical element (21) has at least one first active layer with a material having positive magnetostriction and at least one second active layer with a material having negative magnetostriction. The layer thicknesses and the layer materials of the active layers are such that mechanical stress changes or changes in length of the active layers that are produced by a magnetic field mutually compensate for one another.

Abstract: An EUV mirror arrangement (100) has a multiplicity of mirror elements (110, 111, 112) which are arranged alongside one another and jointly form a mirror surface of the mirror arrangement. Each mirror element has a substrate (120) and a multilayer arrangement (130) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV), said multilayer arrangement comprising a multiplicity of layer pairs (135) having alternate layers composed of a high refractive index layer material and a low refractive index layer material. The multilayer arrangement has an active layer (140) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field. For each active layer provision is made of an electrode arrangement for generating an electric field acting on the active layer.

Abstract: The invention concerns a method of and an arrangement for determining the heating condition of a mirror in an optical system, in particular in a microlithographic projection exposure apparatus. In an embodiment the mirror is an EUV mirror and a method according to the invention comprises the following steps: deflecting at least one input measuring beam on to the mirror; ascertaining at least one optical parameter of at least one output measuring beam produced from the input measuring beam after interaction with the mirror; and determining the heating condition of the mirror on the basis of the parameter.