Patents by Inventor Oliver Natt
Oliver Natt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10684551Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.Type: GrantFiled: April 23, 2019Date of Patent: June 16, 2020Assignees: Carl Zeiss SMT GmbH, ASML Netherlands B.V.Inventors: Norman Baer, Ulrich Loering, Oliver Natt, Gero Wittich, Timo Laufer, Peter Kuerz, Guido Limbach, Stefan Hembacher, Holger Walter, Yim-Bun-Patrick Kwan, Markus Hauf, Franz-Josef Stickel, Jan Van Schoot
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Publication number: 20190310555Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.Type: ApplicationFiled: April 23, 2019Publication date: October 10, 2019Inventors: Norman Baer, Ulrich Loering, Oliver Natt, Gero Wittich, Timo Laufer, Peter Kuerz, Guido Limbach, Stefan Hembacher, Holger Walter, Yim-Bun-Patrick Kwan, Markus Hauf, Franz-Josef Stickel, Jan Van Schoot
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Patent number: 10317802Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.Type: GrantFiled: June 20, 2018Date of Patent: June 11, 2019Assignees: Carl Zeiss SMT GmbH, ASML Netherlands B.V.Inventors: Norman Baer, Ulrich Loering, Oliver Natt, Gero Wittich, Timo Laufer, Peter Kuerz, Guido Limbach, Stefan Hembacher, Holger Walter, Yim-Bun-Patrick Kwan, Markus Hauf, Franz-Josef Stickel, Jan Van Schoot
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Publication number: 20190155166Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated.Type: ApplicationFiled: January 18, 2019Publication date: May 23, 2019Inventors: Oliver Natt, Frank Schlesener
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Patent number: 10222704Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimization criterion. These control commands are applied to the optical elements, before the mask is illuminated.Type: GrantFiled: June 20, 2017Date of Patent: March 5, 2019Assignee: Carl Zeiss SMT GmbHInventors: Oliver Natt, Frank Schlesener
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Publication number: 20180299784Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.Type: ApplicationFiled: June 20, 2018Publication date: October 18, 2018Inventors: Norman Baer, Ulrich Loering, Oliver Natt, Gero Wittich, Timo Laufer, Peter Kuerz, Guido Limbach, Stefan Hembacher, Holger Walter, Yim-Bun-Patrick Kwan, Markus Hauf, Franz-Josef Stickel, Jan Van Schoot
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Patent number: 10031423Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.Type: GrantFiled: July 14, 2017Date of Patent: July 24, 2018Assignees: Carl Zeiss SMT GmbH, ASML Netherlands B.V.Inventors: Norman Baer, Ulrich Loering, Oliver Natt, Gero Wittich, Timo Laufer, Peter Kuerz, Guido Limbach, Stefan Hembacher, Holger Walter, Yim-Bun-Patrick Kwan, Markus Hauf, Franz-Josef Stickel, Jan Van Schoot
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Publication number: 20180024439Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated.Type: ApplicationFiled: June 20, 2017Publication date: January 25, 2018Inventors: Oliver Natt, Frank Schlesener
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Publication number: 20170315449Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.Type: ApplicationFiled: July 14, 2017Publication date: November 2, 2017Inventors: Norman Baer, Ulrich Loering, Oliver Natt, Gero Wittich, Timo Laufer, Peter Kuerz, Guido Limbach, Stefan Hembacher, Holger Walter, Yim-Bun-Patrick Kwan, Markus Hauf, Franz-Josef Stickel, Jan Van Schoot
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Patent number: 9746778Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.Type: GrantFiled: March 15, 2016Date of Patent: August 29, 2017Assignees: Carl Zeiss SMT GmbH, ASML Netherlands B.V.Inventors: Norman Baer, Ulrich Loering, Oliver Natt, Gero Wittich, Timo Laufer, Peter Kuerz, Guido Limbach, Stefan Hembacher, Holger Walter, Yim-Bun-Patrick Kwan, Markus Hauf, Franz-Josef Stickel, Jan Van Schoot
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Patent number: 9703206Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated.Type: GrantFiled: May 4, 2016Date of Patent: July 11, 2017Assignee: Carl Zeiss SMT GmbHInventors: Oliver Natt, Frank Schlesener
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Patent number: 9568845Abstract: A mirror including a substrate and a reflective coating that includes a first group of layers and a second group of layers arranged between the substrate and the first group of layers. Both the first and second groups of layers include a plurality of alternating first material layers and second material layers, arranged one above another. The refractive index of the first material for radiation in the range of 5-30 nm is greater than the refractive index of the second material in that wavelength range. The first group of layers is configured to have a number of layers that is greater than 20, such that, upon irradiation with radiation having a wavelength in the range of 5-30 nm, less than 20% of the radiation reaches the second group of layers, which has a layer thickness variation for correcting the surface form of the mirror.Type: GrantFiled: March 12, 2012Date of Patent: February 14, 2017Assignee: Carl Zeiss SMT GmbHInventors: Martin Rocktaeschel, Hartmut Enkisch, Franz-Josef Stickel, Oliver Natt, Hans-Juergen Mann, Sascha Migura
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Publication number: 20160246180Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated.Type: ApplicationFiled: May 4, 2016Publication date: August 25, 2016Inventors: Oliver Natt, Frank Schlesener
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Publication number: 20160195818Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.Type: ApplicationFiled: March 15, 2016Publication date: July 7, 2016Inventors: Norman Baer, Ulrich Loering, Oliver Natt, Gero Wittich, Timo Laufer, Peter Kuerz, Guido Limbach, Stefan Hembacher, Holger Walter, Yim-Bun-Patrick Kwan, Markus Hauf, Franz-Josef Stickel, Jan Van Schoot
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Patent number: 9341957Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimization criterion. These control commands are applied to the optical elements, before the mask is illuminated.Type: GrantFiled: November 23, 2015Date of Patent: May 17, 2016Assignee: Carl Zeiss SMT GmbHInventors: Oliver Natt, Frank Schlesener
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Patent number: 9316929Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.Type: GrantFiled: January 30, 2013Date of Patent: April 19, 2016Assignees: Carl Zeiss SMT GmbH, ASML Netherlands B.V.Inventors: Norman Baer, Ulrich Loering, Oliver Natt, Gero Wittich, Timo Laufer, Peter Kuerz, Guido Limbach, Stefan Hembacher, Holger Walter, Yim-Bun-Patrick Kwan, Markus Hauf, Franz-Josef Stickel, Jan Van Schoot
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Patent number: 9298097Abstract: The disclosure relates to a projection exposure apparatus for EUV microlithography which includes an illumination system for illuminating a pattern, and a projection objective for imaging the pattern onto a light-sensitive substrate. The projection objective has a pupil plane with an obscuration. The illumination system generates light with an angular distribution having an illumination pole which extends over a range of polar angles and a range of azimuth angles and within which the light intensity is greater than an illumination pole minimum value. From the illumination pole toward large polar angles a dark zone is excluded within which the light intensity is less than the illumination pole minimum value, and which has in regions a form corresponding to the form of the obscuration of the pupil plane.Type: GrantFiled: March 1, 2013Date of Patent: March 29, 2016Assignee: Carl Zeiss SMT GmbHInventors: Marc Bienert, Heiko Feldmann, Aksel Goehnermeier, Oliver Natt, Johannes Ruoff
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Publication number: 20160077444Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated.Type: ApplicationFiled: November 23, 2015Publication date: March 17, 2016Inventors: Oliver Natt, Frank Schlesener
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Patent number: 9217931Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimization criterion. These control commands are applied to the optical elements, before the mask is illuminated.Type: GrantFiled: May 24, 2013Date of Patent: December 22, 2015Assignee: Carl Zeiss SMT GmbHInventors: Oliver Natt, Frank Schlesener
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Patent number: 9116441Abstract: An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane. The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.Type: GrantFiled: April 3, 2012Date of Patent: August 25, 2015Assignee: Carl Zeiss SMT GmbHInventors: Nils Dieckmann, Manfred Maul, Christian Hettich, Oliver Natt