Abstract: A method and system for managing a set of applications stored on a mobile terminal, comprising an access to said set of applications enabling at least one specific function to be accessed by at least one application using an application manager.

Abstract: A contact allocation method for a subscriber smart card (300) in a mobile terminal (100) fitted with said card, the mobile terminal including at least first and second electronic modules (130, 140) suitable for communicating with the subscriber smart card (300) using respective first and second communications protocols. To enable the way in which the contacts of the subscriber smart card (300) are allocated to be managed dynamically, the card is connected to the first and to the second electronic modules (130, 140) in alternation by selectively connecting at least one contact (C4) of said card to the first or to the second electronic module (130, 140).

Abstract: The disclosure relates to a method for growing an element III nitride, wherein the growth is carried out on a substrate made of a material capable of maintaining the same crystalline structure from the element III nitride growth temperature to room temperature, the substrate being an M-V—O4 alloy, where M denotes a transition metal or a Group III element, and where V denotes N, P, S, or Sb, or an (Si-IV)O2 alloy, where IV denotes a Group IV element other than silicon. The disclosure also relates to the structures and components obtained after the implementation of the method.

Abstract: The present application relates to a method for the growth of indium nitride on a substrate by means of MOVPE in the presence of a noble gas as growth vector.

Abstract: A contact allocation method for a subscriber smart card (300) in a mobile terminal (100) fitted with said card, the mobile terminal including at least first and second electronic modules (130, 140) suitable for communicating with the subscriber smart card (300) using respective first and second communications protocols. To enable the way in which the contacts of the subscriber smart card (300) are allocated to be managed dynamically, the card is connected to the first and to the second electronic modules (130, 140) in alternation by selectively connecting at least one contact (C4) of said card to the first or to the second electronic module (130, 140).

Abstract: A method and system for managing a set of applications stored on a mobile terminal, comprising an access to said set of applications enabling at least one specific function to be accessed by at least one application using an application manager.

Abstract: The invention relates to a structure usable in electronic, optical or optoelectronic engineering which comprises a substantially crystalline layer made of an alloy consisting of at least one element of the column II of the periodic elements system and/or at least one element of the column IV of the periodic elements system and of N2 (said alloy being noted N-IV-N2), wherein said structure also comprises an InN layer. A method for producing an indium nitride thereof for indium nitride growth are also disclosed.

Abstract: The invention concerns a method for manufacturing sizeable quantum dots of Indium Nitride in which a layer of Indium Nitride is grown onto a layer of crystalline buffer. The crystalline buffer is chosen with a lattice structure similar to the lattice structure of Indium Nitride and with the lattice mismatch between Indium Nitride and the crystalline buffer being greater than 5%. During the growth of Indium Nitride, surface strains are produced by the crystalline buffer, allowing the Indium Nitride to self-organize onto the crystalline buffer so as to form a plurality of sizeable quantum dots.

Abstract: The invention concerns a method for manufacturing sizeable quantum dots of Indium Nitride in which a layer of Indium Nitride is grown onto a layer of crystalline buffer. The crystalline buffer is chosen with a lattice structure similar to the lattice structure of Indium Nitride and with the lattice mismatch between Indium Nitride and the crystalline buffer being greater than 5%. During the growth of Indium Nitride, surface strains are produced by the crystalline buffer, allowing the Indium Nitride to self-organise onto the crystalline buffer so as to form a plurality of sizeable quantum dots.