Abstract: The process for the fabrication of an electronic device has the steps of forming a layer to be etched on top of a substrate in a wafer of semiconductor material; depositing a masking layer; and carrying out a plasma etch to define the geometry of the layer to be etched. The masking layer is made so as to be conductive, at least during one part of the etching step; in this way, the electrons implanted on the top part of the masking layer during plasma etching can recombine with the positive charges which have reached the layer to be etched. The recombination of the charges makes it possible to prevent damage from plasma resulting from the formation of parasitic electric currents which are detrimental to the electronic device itself.

Abstract: A method enhances selectivity between a film of a light-sensitive material and a layer to be subjected to etching in the course of fabrication processes of an electronic semiconductor device starting from a semiconductor material wafer. The method includes radiating the wafer with an ion beam subsequently to depositing the layer to be etched and defining a circuit pattern on the film of light-sensitive material. An alternative method exposes the wafer to a non-reactive gas medium under plasma rather than radiating the wafer with an ion beam.

Abstract: A process that includes forming a metal layer on top of a wafer of semiconductor material; forming a mask having an appropriate geometry; defining the metal layer to form conductive lines in the metal layer according to the geometry of the mask; forming, on side walls of the mask a polymeric structure; selectively removing the mask; depositing, on the polymeric structure and on the conductive lines, an insulating material. The polymeric structure, made of an inorganic polymer, forms a “supporting bridge” for the insulating material, preventing the latter from depositing in the gaps between the conductive lines. In these conditions, the gap between two adjacent conductive lines is occupied only by air, which has a very low dielectric constant. This results in a reduced capacitive coupling between the lines themselves.

Abstract: A method enhances selectivity between a film of a light-sensitive material and a layer to be subjected to etching in the course of fabrication processes of an electronic semiconductor device starting from a semiconductor material wafer. The method includes radiating the wafer with an ion beam subsequently to depositing the layer to be etched and defining a circuit pattern on the film of light-sensitive material. An alternative method exposes the wafer to a non-reactive gas medium under plasma rather than radiating the wafer with an ion beam.

Abstract: Presented is a method of enhancing the rate of removal of a photoresist layer from wafers of semiconductor material after the latter have gone through various process steps to define the patterns of integrated circuits. The method includes heating the wafer and treating it with low-pressure steam in a vacuum environment before starting to remove the photoresist by plasma or wet solutions. This pre-treatment of the photoresists allows the time for removing the photoresist to be reduced substantially and eliminates problems from residue.