Abstract: A storage system is provided that performs a defragmentation operation or proactive garbage collection in its memory based on a command from a host. The command specifies which blocks in the memory should take part in the defragmentation operation by specifying a maximum amount of valid data that a block can have to qualify for defragmentation. That way, the storage system only performs defragmentation on those blocks that meet the validity criteria provided by the host. This can help improve performance of the storage system while reducing the degree of negative tradeoffs that may come with defragmentation or proactive garbage collection.

Abstract: A storage system is provided that performs a defragmentation operation or proactive garbage collection in its memory based on a command from a host. The command specifies which blocks in the memory should take part in the defragmentation operation by specifying a maximum amount of valid data that a block can have to qualify for defragmentation. That way, the storage system only performs defragmentation on those blocks that meet the validity criteria provided by the host. This can help improve performance of the storage system while reducing the degree of negative tradeoffs that may come with defragmentation or proactive garbage collection.

Abstract: A method for manufacturing optical unit, the method includes (a) obtaining an intermediate optical unit that comprises a semiconductor portion, a transparent organic layer, the array of organic microlenses and a protective layer; (b) depositing a protective mask above a first protective layer region; (c) removing, by applying a first etch process, the second protective layer region to expose a second region of the transparent organic layer; and (d) removing, by applying a second etch process, the second region of the transparent organic layer to expose the contact pads and removing the protective mask while maintaining the first protective layer portion.

Abstract: Some demonstrative embodiments include devices and/or methods of gettering on silicon on insulator (SOI) substrate. For example, a complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) may include a plurality of pixels arranged on a wafer, a pixel of the pixels including: a silicon active area; at least one non-silicided leakage-sensitive component formed on the active area, the leakage-sensitive component is sensitive to metal contaminants; a non-leakage-sensitive area formed on the active area, the non-leakage-sensitive area surrounding the leakage-sensitive component; and at least one silicided gettering region formed on the non-leakage-sensitive area to trap the metal contaminants.

Abstract: Some demonstrative embodiments include devices and/or methods of gettering on silicon on insulator (SOI) substrate. For example, a complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) may include a plurality of pixels arranged on a wafer, a pixel of the pixels including: a silicon active area; at least one non-silicided leakage-sensitive component formed on the active area, the leakage-sensitive component is sensitive to metal contaminants; a non-leakage-sensitive area formed on the active area, the non-leakage-sensitive area surrounding the leakage-sensitive component; and at least one silicided gettering region formed on the non-leakage-sensitive area to trap the metal contaminants.