Abstract: Gate-all-around integrated circuit structures having pre-spacer-deposition cut gates are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, and a second gate stack is over the second vertical arrangement of horizontal nanowires. An end of the second gate stack is spaced apart from an end of the first gate stack by a gap. The integrated circuit structure also includes a dielectric structure having a first portion forming a gate spacer along sidewalls of the first gate stack, a second portion forming a gate spacer along sidewalls of the second gate stack, and a third portion completely filling the gap, the third portion continuous with the first and second portions.

Abstract: In an example embodiment, a data model, software architecture, and process for synchronizing information about tags is provided, that permits assignment between different microservices. When a tag is added to an entity, then an assignment is made. The assignment is a record that contains a reference to a unique identifier for the tag and also describes the entity's domain and entity type. Each service uses at least one distinct domain, so tag assignments from different services should not conflict with one another.

Abstract: Integrated circuit structures having a dielectric anchor and confined epitaxial source or drain structure, and methods of fabricating integrated circuit structures having a dielectric anchor and confined epitaxial source or drain structure, are described. For example, an integrated circuit structure includes a sub-fin in a shallow trench isolation (STI) structure. A plurality of horizontally stacked nanowires is over the sub-fin. A gate dielectric material layer is surrounding the plurality of horizontally stacked nanowires. A gate electrode structure is over the gate dielectric material layer. A confined epitaxial source or drain structure is at an end of the plurality of horizontally stacked nanowires. A dielectric anchor is laterally spaced apart from the plurality of horizontally stacked nanowires and recessed into a first portion of the STI structure, the dielectric anchor having an uppermost surface below an uppermost surface of the confined epitaxial source or drain structure.

Abstract: An apparatus and method for compensating the effect of a contact by a hand or other body part of a user with a touch screen while holding an input device on the strength of a capacitively coupled uplink signal provided to the input device by a host device, by detecting and/or discriminating the body touch and modifying at least one uplink channel parameter.

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment a semiconductor device comprises a first interlayer dielectric (ILD), a plurality of source/drain (S/D) contacts in the first ILD, a plurality of gate contacts in the first ILD, wherein the gate contacts and the S/D contacts are arranged in an alternating pattern, and wherein top surfaces of the gate contacts are below top surfaces of the S/D contacts so that a channel defined by sidewall surfaces of the first ILD is positioned over each of the gate contacts, mask layer partially filling a first channel over a first gate contact, and a fill metal filling a second channel over a second gate contact that is adjacent to the first gate contact.

Abstract: A touch-screen display device comprises a series of column electrodes and a series of row electrodes, with an electronic display layer arranged behind the series of column electrodes and behind the series of row electrodes. The series of row electrodes crosses the series of column electrodes such that the electrical impedance at each crossing of a row and column electrode is responsive to the proximity of a touch input to that crossing. A row-drive circuit is configured to apply an excitation signal to a selected row electrode and to concurrently apply a compensation signal to one or more other row electrodes, the compensation signal being out of phase with respect to the excitation signal. A column-sense circuit is configured to sense a column signal from the series of column electrodes and to provide a corresponding column output.

Abstract: In a vehicle-to-everything (V2X) environment and by a self-vehicle, methods and systems therefor, the methods comprising calculating a safety relevance value of a sensor detected road user or calculating a first movement similarity between the self-vehicle and a road user ahead or behind the self-vehicle and a second movement similarity between a sensor detected road user and a road user ahead or behind the sensor detected road user, and adjusting Dynamic Congestion Control (DCC) triggering condition parameters based on the calculated safety relevance value or based on the calculated first and/or second movement similarities.

Abstract: Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a plurality of conductive lines in a first inter-layer dielectric (ILD) layer, the plurality of conductive lines on a same level and along a same direction. A second ILD layer is over the plurality of conductive lines and over the first ILD layer. A first conductive via is in a first opening in the second ILD layer, the first conductive via in contact with a first one of the plurality of conductive lines, the first conductive via having a straight edge.

Abstract: An integrated circuit includes a first device having a first source or drain region, and a second device having a second source or drain region that is laterally adjacent to the first source or drain region. A conductive source or drain contact includes (i) a lower portion in contact with the first source or drain region, and extending above the first source or drain region, and (ii) an upper portion extending laterally from above the lower portion to above the second source or drain region. A dielectric material is between at least a section of the upper portion of the conductive source or drain contact and the second source or drain region. In an example, each of the first and second devices is a gate-all-around (GAA) device having one or more nanoribbons, nanowires, or nanosheets as channel regions, or is a finFet structure having a fin-based channel region.

Abstract: Integrated circuit structures having uniform grid metal gate and trench contact cut, and methods of fabricating integrated circuit structures having uniform grid metal gate and trench contact cut, are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires. A gate electrode is over the vertical stack of horizontal nanowires. A conductive trench contact is adjacent to the gate electrode. A dielectric sidewall spacer is between the gate electrode and the conductive trench contact. A first dielectric cut plug structure extends through the gate electrode, through the dielectric sidewall spacer, and through the conductive trench contact. A second dielectric cut plug structure extends through the gate electrode, through the dielectric sidewall spacer, and through the conductive trench contact, the second dielectric cut plug structure laterally spaced apart from and parallel with the first dielectric cut plug structure.

Abstract: Mushroomed via structures for trench contact or gate contact are described. In an example, an integrated circuit structure includes a trench contact structure over an epitaxial source or drain structure. A dielectric layer is over the trench contact structure. A trench contact via is in an opening in the dielectric layer, the trench contact via in contact with the trench contact structure. A trench contact via extension is on the trench contact via. The trench contact via extension above the dielectric layer and extending laterally beyond the trench contact via.

Abstract: A multistage fluidic device includes a housing with first and second ends defining an inner volume therebetween. A first sealing member is fixedly secured to the tubular body near the first end. A cannula is disposed through the first sealing member and a plunger is slidably received within the housing. Spaced apart moveable septums are located within the housing and divide the inner volume into a plurality of chambers. Each septum sealingly engages the inner wall of the housing. A first chamber is defined between the first sealing member and a first septum. The first end of the cannula resides within the first chamber. A hollow bore defined by the cannula provides fluid communication between the inner volume of the housing and the environment. A second chamber is defined between the first septum and a second septum and a third chamber is defined between the second septum and the plunger.

Abstract: The disclosed technology relates to electrical feedthroughs for thin battery cells. A battery cell enclosure includes a terraced portion having a reduced thickness relative to another portion of the enclosure. The enclosure includes an opening disposed on a horizontal surface of the terraced portion for receiving the electrical feedthrough. Because the feedthrough is disposed on the horizontal surface of the terraced portion, the feedthrough may be over-sized thereby reducing the resistance and impedance of the feedthrough without increasing the height or thickness of the enclosure.

Abstract: An apparatus and method for adapting a conversion of a force or pressure sensed at a stylus into a converted output used for an inking process at a host device, wherein samples of the converted output are collected over a predetermined time period. Then, the collected samples are evaluated and at least one parameter of the conversion is controlled in response to a result of the evaluation. Thereby, a user-specific probability distribution of the sensed force or pressure can be matched to a desired probability distribution of the inking process.

Abstract: A method to process touch input on a touch-screen display device having an electronic display layer arranged behind a series of column electrodes and behind a series of row electrodes. The method comprises: concurrently driving one or more row electrodes while leaving undriven one or more other row electrodes; sensing a row signal from the one or more other row electrodes; sensing a column signal from the series of column electrodes; and providing a corrected column output based at least partly on the column signal and on the row signal.

Abstract: Embodiments disclosed herein provide for a method including configuring a self-learning safety sign to: establish vehicle-to-everything (V2X) communications with a two-wheeler equipped with a V2X transceiver and positioned at a ride point and/or ridden along a common and divergent route according to a setup stage for the safety sign; receive ride parameters in the V2X communications from the two-wheeler associated with the positioning and/or riding of the two-wheeler; and analyze the received ride parameters to create a ride model for determining a future route to be taken by any two-wheeler in V2X communication with the safety sign.

Abstract: A lightweight superconducting machine provides a coil support shell having a polygonal outer surface facilitating the use of flat electrical coils better adapted to superconducting temperatures. An improved mounting of spokes between the rotor and shell provides for a straight spoke extent reducing stress concentration facilitated by a ball joint termination of the spoke and in-line orientation of a tightening mechanism.

Abstract: A system and method are described for supporting permanent roaming for a user equipment (UE) device, which is carried out by a permanent roaming coordinator component, in a mobile wireless network environment including a plurality of public land mobile network (PLMN) carriers within a mobile wireless geographic region. The method includes accessing a current permanent roaming policy applicable to the mobile wireless geographic region within which the UE device resides. The method further includes applying the current permanent roaming policy to establish a current preferred PLMN for supporting a roaming mobile wireless network connection by the UE device, and resetting a usage counter parameter for the UE device in accordance with designating the current preferred PLMN for the UE device.

Abstract: Contact over active gate (COAG) structures with etch stop layers, and methods of fabricating contact over active gate (COAG) structures using etch stop layers, are described. In an example, an integrated circuit structure includes a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon. A first dielectric etch stop layer is directly on and continuous over the trench insulating layers and the gate insulating layers. A second dielectric etch stop layer is directly on and continuous over the first dielectric etch stop layer, the second dielectric etch stop layer distinct from the first dielectric etch stop layer. An interlayer dielectric material is on the second dielectric etch stop layer.

Abstract: Provided herein, in some embodiments, are systems, methods, compositions, and kits for detecting and quantifying analytes using a primary analyte binding molecule conjugated to a nucleic acid template.