Abstract: Disclosed are a portable surface characteristics measurement device and a control method thereof. The portable surface characteristics measurement device includes: a roughness sensor configured to convert a signal sensed from a surface of an object during movement of the portable surface characteristics measurement device on the surface of the object into an electric vibration signal; a movement measurement sensor configured to measure a movement physical quantity of the portable surface characteristics measurement device; and a processor configured to change a sampling interval depending on the measured movement physical quantity, and sample the vibration signal in real time, wherein the processor is configured to perform Fourier transform on the sampled vibration signal, and identify a peak frequency band shown in the Fourier-transformed vibration signal as surface roughness information of the object.

Abstract: Disclosed are a portable surface characteristics measurement device and a control method thereof. The portable surface characteristics measurement device includes: a roughness sensor configured to convert a signal sensed from a surface of an object during movement of the portable surface characteristics measurement device on the surface of the object into an electric vibration signal; a movement measurement sensor configured to measure a movement physical quantity of the portable surface characteristics measurement device; and a processor configured to change a sampling interval depending on the measured movement physical quantity, and sample the vibration signal in real time, wherein the processor is configured to perform Fourier transform on the sampled vibration signal, and identify a peak frequency band shown in the Fourier-transformed vibration signal as surface roughness information of the object.

Abstract: A pressure sensing device having a Dirac material and a method of operating the same are provided. The pressure sensing device includes a Dirac material pattern disposed on a substrate and having a band structure in which Dirac cones meet at a Dirac point. A source electrode and a drain electrode are respectively connected to the Dirac material pattern. A spacer layer including a cavity on the Dirac material pattern is disposed on the substrate. A gate electrode overlapping the Dirac material pattern is disposed on the cavity.

Abstract: A pressure sensing device having a Dirac material and a method of operating the same are provided. The pressure sensing device includes a Dirac material pattern disposed on a substrate and having a band structure in which Dirac cones meet at a Dirac point. A source electrode and a drain electrode are respectively connected to the Dirac material pattern. A spacer layer including a cavity on the Dirac material pattern is disposed on the substrate. A gate electrode overlapping the Dirac material pattern is disposed on the cavity.

Abstract: This disclosure relates to a method of manufacturing n-doped graphene and an electrical component using ammonium fluoride (NH4F), and to graphene and an electrical component thereby. An example method of manufacturing n-doped graphene includes (a) preparing graphene and ammonium fluoride (NH4F); and (b) exposing the graphene to the ammonium fluoride (NH4F), wherein through (b), a fluorine layer is formed on part or all of upper and lower surfaces of a graphene layer, and ammonium ions are physisorbed to part or all of the upper and lower surfaces of the graphene layer or defects between carbon atoms of the graphene layer, thereby maintaining or further improving superior electrical properties of graphene including charge mobility while performing n-doping of graphene.

Abstract: This disclosure relates to a method of manufacturing n-doped graphene and an electrical component using ammonium fluoride (NH4F), and to graphene and an electrical component thereby. An example method of manufacturing n-doped graphene includes (a) preparing graphene and ammonium fluoride (NH4F); and (b) exposing the graphene to the ammonium fluoride (NH4F), wherein through (b), a fluorine layer is formed on part or all of upper and lower surfaces of a graphene layer, and ammonium ions are physisorbed to part or all of the upper and lower surfaces of the graphene layer or defects between carbon atoms of the graphene layer, thereby maintaining or further improving superior electrical properties of graphene including charge mobility while performing n-doping of graphene.