Patents by Inventor Orit Hava Armon Hershkovich

Orit Hava Armon Hershkovich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Measuring a height profile of a hole formed in non-conductive region
    Patent number: 10714306
    Abstract: A system, computer program product and a method for measuring a hole. The method may include charging a vicinity of the hole having a nanometric width; obtaining, multiple electron images of the hole; wherein each electron image is formed by sensing electrons of an electron energy that exceeds an electron energy threshold that is associated with the electron image; wherein electron energy thresholds associated with different electron images of the multiple electron images differ from each other; receiving or generating a mapping between height values and the electron energy thresholds; processing the multiple electron images to provide hole measurements; and generating three dimensional measurements of the hole based on the mapping and the hole measurements.
    Type: Grant
    Filed: June 11, 2018
    Date of Patent: July 14, 2020
    Assignee: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Konstantin Chirko, Orit Hava Armon Hershkovich
  • MEASURING A HEIGHT PROFILE OF A HOLE FORMED IN NON-CONDUCTIVE REGION
    Publication number: 20190378683
    Abstract: A system, computer program product and a method for measuring a hole. The method may include charging a vicinity of the hole having a nanometric width; obtaining, multiple electron images of the hole; wherein each electron image is formed by sensing electrons of an electron energy that exceeds an electron energy threshold that is associated with the electron image; wherein electron energy thresholds associated with different electron images of the multiple electron images differ from each other; receiving or generating a mapping between height values and the electron energy thresholds; processing the multiple electron images to provide hole measurements; and generating three dimensional measurements of the hole based on the mapping and the hole measurements.
    Type: Application
    Filed: June 11, 2018
    Publication date: December 12, 2019
    Applicant: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Konstantin Chirko, Orit Hava Armon Hershkovich