Abstract: Various embodiments disclose a controller to manage memory devices. In an exemplary method, signals are exchanged with a host processor to allow the host processor to communicate with multiple memory devices in a memory stack as a single device, regardless of an actual number of memory devices within the memory stack. Power is provided to a single one of the multiple memory devices in the memory stack at a time to reduce power consumption. Other methods, apparatuses, and devices are also disclosed.

Abstract: A single virtualized ECC NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack.

Abstract: Various embodiments disclose a controller to manage memory devices. In an exemplary method, signals are exchanged with a host processor to allow the host processor to communicate with a plurality of memory devices in a memory stack as a single device, regardless of an actual number of memory devices within the memory stack. Power is provided to a single one of the plurality of the memory devices in the memory stack at a time to reduce power consumption. Other methods, apparatuses, and devices are also disclosed.

Abstract: A single virtualized ECC NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack.

Abstract: In various embodiments, a single virtualized error correcting code (ECC) NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack. In various embodiments, a controller manages a plurality of NAND memory devices. The controller provides power to a select one of the plurality of NAND memory devices at a time to conserve overall power consumption of the storage system.

Abstract: In accordance with some embodiments, wear leveling may be done based on the difference in age of discarded blocks and engaged blocks. Data is moved to an older discarded block from a younger engaged block. Two wear leveling bits may be used for each logical block, such that the wear leveling bits are used in alternating cycles.

Abstract: Subject matter disclosed herein relates to memory devices or accessing memory devices, and more particularly, but by way of example and not limitation, to preparation of a memory device to perform a memory access operation based at least partly on at least one indicator signal that indicates a memory access type.

Abstract: In accordance with some embodiments, wear leveling may be done based on the difference in age of discarded blocks and engaged blocks. Data is moved to an older discarded block from a younger engaged block. Two wear leveling bits may be used for each logical block, such that the wear leveling bits are used in alternating cycles.

Abstract: In various embodiments, a single virtualized error correcting code (ECC) NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack. In various embodiments, a controller manages a plurality of NAND memory devices. The controller provides power to a select one of the plurality of NAND memory devices at a time to conserve overall power consumption of the storage system.

Abstract: A single virtualized ECC NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack.

Abstract: In accordance with some embodiments, wear leveling may be done based on the difference in age of discarded blocks and engaged blocks. Data is moved to an older discarded block from a younger engaged block. Two wear leveling bits may be used for each logical block, such that the wear leveling bits are used in alternating cycles.

Abstract: Subject matter disclosed herein relates to memory devices or accessing memory devices, and more particularly, but by way of example and not limitation, to preparation of a memory device to perform a memory access operation based at least partly on at least one indicator signal that indicates a memory access type.

Abstract: A single virtualized ECC NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack.

Abstract: In accordance with some embodiments, wear leveling may be done based on the difference in age of discarded blocks and engaged blocks. Data is moved to an older discarded block from a younger engaged block. Two wear leveling bits may be used for each logical block, such that the wear leveling bits are used in alternating cycles.