Abstract: The purpose of the invention is to compensate for the radiation tolerance of a semiconductor memory. An apparatus (10) for compensating for radiation tolerance comprises: a voltage value acquisition unit (11) that acquires a data retention voltage value that is a maximum voltage value at which data is inverted when a power supply voltage of a semiconductor memory having a latch circuit is lowered; a correction value determination unit (12) that determines a voltage correction value on the basis of a difference between the data retention voltage value and a reference voltage value; and a voltage adjustment unit (13) that adjusts at least one among the power supply voltage and a substrate bias voltage by using the voltage correction value. The reference voltage value is set to be equal to or lower than the data retention voltage value that satisfies a required radiation tolerance.

Abstract: A semiconductor device includes first to N-th PLL circuits configured to operate in synchronization with a common reference clock signal to output first to N-th clock signals, respectively; a majority circuit that performs a majority operation on the first to N-th clock signals to generate a majority clock signal; and a filter circuit to which the majority clock signal is provided, the filter circuit operating as a low-pass filter to output an output clock signal. N is an odd number of three or more.

Abstract: The purpose of the invention is to compensate for the radiation tolerance of a semiconductor memory. An apparatus (10) for compensating for radiation tolerance comprises: a voltage value acquisition unit (11) that acquires a data retention voltage value that is a maximum voltage value at which data is inverted when a power supply voltage of a semiconductor memory having a latch circuit is lowered; a correction value determination unit (12) that determines a voltage correction value on the basis of a difference between the data retention voltage value and a reference voltage value; and a voltage adjustment unit (13) that adjusts at least one among the power supply voltage and a substrate bias voltage by using the voltage correction value. The reference voltage value is set to be equal to or lower than the data retention voltage value that satisfies a required radiation tolerance.

Abstract: A semiconductor device includes first to N-th PLL circuits configured to operate in synchronization with a common reference clock signal to output first to N-th clock signals, respectively; a majority circuit that performs a majority operation on the first to N-th clock signals to generate a majority clock signal; and a filter circuit to which the majority clock signal is provided, the filter circuit operating as a low-pass filter to output an output clock signal. N is an odd number of three or more.

Abstract: An operation adjustment method of an SOI device comprises steps of: (a) obtaining a drain current-substrate bias voltage characteristic of an NMOS transistor for a source-gate voltage of 0V; (b) obtaining a lowest substrate bias voltage which turns on the NMOS transistor from the drain current-substrate bias voltage characteristic; (c) determining an upper limit of a substrate bias voltage of a PMOS transistor as a voltage obtained by subtracting a built-in potential of a pn junction from the lowest substrate bias voltage; and (d) determining the substrate bias voltage of the PMOS transistor as a positive voltage lower than the upper limit. Reduction in the power consumption and maintenance of the radiation tolerance are both achieved for the SOI device.

Abstract: An operation adjustment method of an SOI device comprises steps of: (a) obtaining a drain current-substrate bias voltage characteristic of an NMOS transistor for a source-gate voltage of 0V; (b) obtaining a lowest substrate bias voltage which turns on the NMOS transistor from the drain current-substrate bias voltage characteristic; (c) determining an upper limit of a substrate bias voltage of a PMOS transistor as a voltage obtained by subtracting a built-in potential of a pn junction from the lowest substrate bias voltage; and (d) determining the substrate bias voltage of the PMOS transistor as a positive voltage lower than the upper limit. Reduction in the power consumption and maintenance of the radiation tolerance are both achieved for the SOI device.

Abstract: Provided herein is a vibration-type angular velocity sensor capable of improving detection precision of angular velocities around the Z axis and preventing detection precision of angular velocities around the X and Y axes from deteriorating. A weight 3 is columnar or conic. The outline of an outer peripheral portion of a diaphragm 1 has such shape that a straight portion ST is formed at each of four corner portions of a square. Four vibration exciting electrodes 11 are respectively located in four regions partitioned by a first imaginary line L1 and a second imaginary line L2. Four angular velocity sensing electrodes 13 are respectively located in four regions partitioned by a first imaginary diagonal line CL1 and a second imaginary diagonal line Cl2.

Abstract: Provided are a solar cell module, a method of manufacturing the solar cell module, and a photovoltaic power generation system including the solar cell module. The solar cell module includes a solar cell group in which a plurality of solar cells are arranged, and a first heat storage layer that is disposed on a rear surface side of the solar cell group. The first heat storage layer is a layer that contains 80% by weight or greater of a heat storage material including a first latent heat storage material having a phase change temperature of T1. The solar cell module may further include a second heat storage layer, which includes a second latent heat storage material having a phase change temperature T2 different from the phase change temperature T1, on a rear surface side of the first heat storage layer.

Abstract: A piezoelectric sound generating element capable of providing flatter and less fluctuated sound pressure frequency characteristics includes a diaphragm that is formed in a circular plate shape with a circular profile. A piezoelectric element is affixed to the side of a bottom wall portion of the diaphragm. The piezoelectric element has an asymmetric octagonal profile including a pair of long side portions opposing each other, a pair of short side portions opposing each other, and four connecting side portions.

Abstract: A photocatalyst material and a photocatalyst device capable of generating hydrogen from water by radiation of sunlight at high efficiency. The photocatalyst material according to the present invention includes a nitride-based compound semiconductor obtained by replacement of part of Ga and/or Al by a 3d-transition metal. The nitride-based compound semiconductor has one or more impurity bands. A light absorption coefficient of the nitride-based compound semiconductor is 1,000 cm?1 or more in an entire wavelength region of 1,500 nm or less and 300 nm or more. Further, the photocatalyst material satisfies the following conditions: the energy level of the bottom of the conduction band is more negative than the redox potential of H+/H2; the energy level of the top of the valence band is more positive than the redox potential of O2/H2O; and there is no or little degradation of a material even when the material is irradiated with light underwater.

Abstract: A scatterer substrate includes at least a substrate; and a scatterer layer which is overlapped and disposed on one surface side of the substrate and has a plurality of non-light emitting particles that change a traveling direction of light, in which the scatterer layer is formed of at least the particles and gaps maintained between the particles and the substrate.

Abstract: A solar cell module includes a light collector, a solar cell element, and a frame. The light collector includes a main surface and an end surface, allows the external light to be incident from the main surface and allows the light propagating through the inside to be emitted from the end surface. The solar cell element is provided so as to face the end surface and receives the light emitted from the end surface to perform photoelectric conversion. The frame holds a peripheral edge portion of the light collector. The light collector includes a through hole which is provided in the inside in relation to the frame when seen from the main surface side and penetrates the light collector in a thickness direction or a notched s portion which is provided in the inside in relation to the frame when seen from the main surface side and extends from the main surface to a rear surface in the peripheral edge portion.

Abstract: A piezoelectric sound generating element capable of providing flatter and less fluctuated sound pressure frequency characteristics includes a diaphragm that is formed in a circular plate shape with a circular profile. A piezoelectric element is affixed to the side of a bottom wall portion of the diaphragm. The piezoelectric element has an asymmetric octagonal profile including a pair of long side portions opposing each other, a pair of short side portions opposing each other, and four connecting side portions.

Abstract: Provided herein is a vibration-type angular velocity sensor capable of improving detection precision of angular velocities around the Z axis and preventing detection precision of angular velocities around the X and Y axes from deteriorating. A weight 3 is columnar or conic. The outline of an outer peripheral portion of a diaphragm 1 has such shape that a straight portion ST is formed at each of four corner portions of a square. Four vibration exciting electrodes 11 are respectively located in four regions partitioned by a first imaginary line L1 and a second imaginary line L2. Four angular velocity sensing electrodes 13 are respectively located in four regions partitioned by a first imaginary diagonal line CL1 and a second imaginary diagonal line Cl2.

Abstract: To provide a light emitting device easy to produce and extracting light to its outside with high efficiency, the light-emitting device 70 of the present invention includes an insulating base 10; a light-emitting element 1 mounted on a side of the base 10; and a protection element 2 mounted on the side and protecting the light-emitting element 1. The element 2 is covered with a light-reflecting filler-containing resin 5, which is prepared by causing a flexible silicone resin to contain, before being cured, light-reflecting or light-scattering fillers 5a having a particle diameter larger than the wavelength of light emitted by the element 1. This causes light emitted from the element 1 to be reflected by the resin 5, instead of being absorbed by the element 2, so that such light is released to the outside of the light-emitting device 70. This allows the device 70 to extract light to the outside with high efficiency, and also allows for easy formation of the resin 5 having a desired pattern and position.

Abstract: A photocatalyst material and a photocatalyst device capable of generating hydrogen from water by radiation of sunlight at high efficiency. The photocatalyst material according to the present invention includes a nitride-based compound semiconductor obtained by replacement of part of Ga and/or Al by a 3d-transition metal. The nitride-based compound semiconductor has one or more impurity bands. A light absorption coefficient of the nitride-based compound semiconductor is 1,000 cm?1 or more in an entire wavelength region of 1,500 nm or less and 300 nm or more. Further, the photocatalyst material satisfies the following conditions: the energy level of the bottom of the conduction band is more negative than the redox potential of H+/H2; the energy level of the top of the valence band is more positive than the redox potential of O2/H2O; and there is no or little degradation of a material even when the material is irradiated with light underwater.

Abstract: Light-emitting elements are divided into chromaticity groups on the basis of their chromaticity. In a planar light source, light-emitting elements selected from two of the chromaticity groups are alternately provided in a longitudinal direction and in a transverse direction, respectively. The two chromaticity groups are substantially equally away from a target chromaticity in directions reverse to each other. Further, pairs of two of the light-emitting elements belonging to the two chromaticity groups which are separated from each other, are provided so that distances d2 at which two of the light-emitting elements in each of the pairs are provided are less than distances d1 at which the pairs are provided.

Abstract: A new light-absorbing material which can increase the conversion efficiency of a solar cell and a photoelectric conversion element using same are provided. The light-absorbing material of the present invention comprises a nitride-based compound semiconductor obtained by replacement of part of Al and/or Ga in a compound semiconductor expressed by a general formula Al1?yGayN (0?y?1) by at least one kind of 3d-transition metals, the nitride-based compound semiconductor having one or more impurity bands between a valence band and a conduction band, and whose light absorption coefficient over an overall wavelength region of not longer than 1500 nm and not shorter than 300 being not lower than 1000 cm?1.

Abstract: A light-emitting device including a light-emitting element emitting excitation light for exciting a fluorescent body, a dispersion body having the fluorescent body dispersed therein, which fluorescent body emits fluorescent light having a wavelength different from that of the excitation light, and a lead frame holding the light-emitting element and the dispersion body, wherein at least a portion of the fluorescent light emitted from the fluorescent body in the dispersion body is output to the outside from a side of the dispersion body receiving the excitation light. With this, a light-emitting device having high light output efficiency and an illumination apparatus and a display apparatus using the light-emitting device are provided.

Abstract: A method for producing a cheese-containing food, the method including a step (1) of heating a soft cheese-containing mixture that contains 70 to 100% by mass of a soft cheese using a Joule heater, and a step (2) of stirring the heated soft cheese-containing mixture under shearing in a high speed shear cooker, wherein the series of steps including the steps (1) and (2) is performed at least twice. With this method, a cheese-containing food having satisfactory quality in terms of smoothness in the mouth and flavor and the like can be produced by using a raw material having a high soft cheese content.