Abstract: A charged particle beam lithography system includes a charged particle beam emitter which emits a charged particle beam to a wafer at an acceleration voltage lower than a voltage causing a proximity effect; an illumination optical system which adjusts a beam radius of the charged beam; a cell aperture having a cell pattern corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beam with a first electric field to enter a desired cell pattern of the cell aperture; a demagnification projection optical system which demagnifies the charged particle beam form the cell aperture with a second electric field to form an image on the wafer; and a second deflector which deflects the charged particle beam from the cell aperture with a third electric field to adjust an irradiation position of the charged particle beam on the wafer.

Abstract: A flash memory is arranged to notice the state inside the flash memory to the outside for supporting a garbage collection. The flash memory includes a state information generator and an output unit. The state information generator generates state information that indicates a state of each user area for noticing it to the outside. The output unit outputs the state information to the outside for noticing the state inside the flash memory to the outside.

Abstract: A charged particle beam apparatus includes: a charged particle beam source which generates a charged particle beam to irradiate the charged particle beam onto a specimen; a demagnification optical system which demagnifies the charged particle beam; a deflector which deflects the charged particle beam to scan the specimen; and a first charged particle detector having a detection surface to detect a charged particle generated from the specimen which has been irradiated with the charged particle beam; wherein the detection surface of the first charged particle detector is disposed so as to face towards the charged particle beam source.

Abstract: A charged particle beam lithography system includes: a charged particle beam source which generates a charged particle beam and irradiates a substrate therewith; an aperture in which has been formed a pattern of a shape corresponding to an arbitrary pattern to be drawn; an illuminator which adjusts the diameter of the charged particle beam and illuminates the aperture with the charged particle beam; a first deflector which deflects the charged particle beam by an electrical field to cause the charged particle beam to be incident on an arbitrary pattern, allowing the charged particle beam to pass through the aperture and be reflected back along the optical axis; a first demagnification optical projection system which demagnifies the aperture image of the charged particle beam which has passed through the aperture with the use of an electrical field or electromagnetic field; a second demagnification optical projection system which demagnifies the aperture image of the charged particle beam which has been demagn

Abstract: An oxide catalyst composition for use in producing methacrolein or a mixture of methacrolein and methacrylic acid, wherein the oxide catalyst composition is represented by the formula (MO+W)l2BiaAbBcFedXeSbfOg, wherein: A is at least one member selected from the group consisting of Y and the elements of the lanthanoid series exclusive of Pm; B is at least one member selected from the group consisting of K, Rb and Cs; X is Co solely, or a mixture of Co and at least one member selected from the group consisting of Mg and Ni; and a, b, c, d, e, f and g are, respectively, the atomic ratios of Bi, A, B, Fe, X, Sb and O, relative to twelve atoms of the total of Mo and W, wherein the atomic ratios (a to f) of the elements and the relationship between the amounts of the elements are chosen so as to satisfy specific requirements.

Abstract: A charged particle beam exposure system comprising: a charged particle beam emitting device which generates charged particle beams with which a substrate is irradiated, the charged particle beam emitting device generating the charged particle beams at an accelerating voltage which is lower than that at which an influence of a proximity effect occurs; an illumination optical system which adjusts a beam diameter of the charged particle beams so that density of the charged particle beams is uniform; an character aperture in which an aperture hole is formed in a shape corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beams by an electrostatic field that the charged particle beams have a desired sectional shape and travel towards a desired aperture hole and which returns the charged particle beams passing through the aperture hole to an optical axis thereof; a reducing projecting optical system which forms a multi-pole lens field so that the charged particle be

Abstract: A method of inspecting an interconnection pattern formed by depositing a metal onto a substrate having an interconnection pattern groove formed on a surface thereof includes: selectively measuring a thickness of a part above the substrate of a metal film formed on the substrate, the part above the substrate being a part constituted of the metal deposited upward from substantially the same surface as the surface of the substrate on which an interconnection pattern groove is formed; and evaluating how successfully the interconnection pattern groove is filled with the metal on the basis of a film thickness value obtained by the selective measurement.

Abstract: A charged particle beam lithography system includes a charged particle beam emitter which generates a charged particle beam and which emits the charged particle beam to a wafer, the charged particle beam emitter emitting the charged particle beam at an acceleration voltage lower than a voltage causing a proximity effect that back scattered electrons generated from the wafer by irradiation of the charged particle beam influence an exposure amount of a pattern to be written close to an irradiation position of the charged particle beam; an illumination optical system which adjusts a beam radius of the charged particle beam; a cell aperture having a cell pattern of a shape corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beam with a first electric field so as to enter a desired cell pattern of the cell aperture, and which deflects the charged particle beam which passes through the cell pattern back to an optical axis thereof; a demagnification projection opti

Abstract: A thickness measuring system comprises: an eddy current loss measuring sensor having an exciting coil for receiving a high frequency current to excite a high frequency magnetic field to excite an eddy current in a conductive film, and a receiving coil for outputting the high frequency current which is influenced by an eddy current loss caused by the eddy current; an impedance analyzer for measuring the variation in impedance of the eddy current loss measuring sensor, the variation in current value of the high frequency current or the variation in phase of the high frequency current on the basis of the high frequency current outputted from the receiving coil; an optical displacement sensor for measuring the distance between the conductive film and the eddy current loss measuring sensor; and a control computer including a thickness calculating part for calculating the thickness of the conductive film on the basis of various measured results of the impedance analyzer and optical displacement sensor, and the eddy

Abstract: Disclosed is an oxide catalyst comprising an oxide represented by the formula Mo1VaNbbXcYdZeQfOn (wherein: X is at least one element selected from the group consisting of Te and Sb; Y is at least one element selected from the group consisting of Al and W; Z is at least one element selected from the group consisting of elements which individually form an oxide having a rutile structure and a Z oxide having a rutile structure is used as a source of Z for producing the catalyst; Q is at least one element selected from the group consisting of titanium, tin, germanium, lead, tantalum, ruthenium, rhenium, rhodium, iridium, platinum, chromium, manganese, technetium, osmium, iron, arsenic, cerium, cobalt, magnesium, nickel and zinc, and a Q compound not having a rutile structure is used as a source of Q for producing the catalyst; and a, b, c, d, e, f and n are, respectively, the atomic ratios of V, Nb, X, Y, Z, Q and O, relative to Mo).

Abstract: A thickness measuring system comprises: an eddy current loss measuring sensor having an exciting coil for receiving a high frequency current to excite a high frequency magnetic field to excite an eddy current in a conductive film, and a receiving coil for outputting the high frequency current which is influenced by an eddy current loss caused by the eddy current; an impedance analyzer for measuring the variation in impedance of the eddy current loss measuring sensor, the variation in current value of the high frequency current or the variation in phase of the high frequency current on the basis of the high frequency current outputted from the receiving coil; an optical displacement sensor for measuring the distance between the conductive film and the eddy current loss measuring sensor; and a control computer including a thickness calculating part for calculating the thickness of the conductive film on the basis of various measured results of the impedance analyzer and optical displacement sensor, and the eddy

Abstract: A charged particle beam exposure system comprising: a charged particle beam emitting device which generates charged particle beams with which a substrate is irradiated, the charged particle beam emitting device generating the charged particle beams at an accelerating voltage which is lower than that at which an influence of a proximity effect occurs; an illumination optical system which adjusts a beam diameter of the charged particle beams so that density of the charged particle beams is uniform; an character aperture in which an aperture hole is formed in a shape corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beams by an electrostatic field that the charged particle beams have a desired sectional shape and travel towards a desired aperture hole and which returns the charged particle beams passing through the aperture hole to an optical axis thereof; a reducing projecting optical system which forms a multi-pole lens field so that the charged particle be

Abstract: A branching mirror and a transfer mirror receiving a laser beam reflected on the branching mirror and outputting a laser beam in a direction parallel to the laser beam coming into the branching mirror are fixed to and mounted on one mirror holder. The mirror holder is movably provided between a branching position at which the branching mirror is located in a light path of the laser beam and an escaping position at which the branching mirror is located outside the light path of the laser beam, and while the mirror holder is located at the beam branching position, a laser beam from a laser oscillator can be introduced to the branching mirror.

Abstract: A laser machining apparatus according to the present invention describes characteristics of a laser oscillator with a function including laser power, pulse frequency and duty ratio, computes a command for a power supply unit in a feed forward control section according to a command based on the function and on the power, duty ratio and frequency, computes a command for a power supply unit in the feedback control section from a power command value and a power measurement value from the power sensor, and inputs these command to the power supply unit. Also the laser machining apparatus detects changes in characteristics in the laser oscillator and corrects the function for characteristics of the laser oscillator.

Abstract: A laser machining apparatus according to the present invention describes characteristics of a laser oscillator with a function including laser power, pulse frequency and duty ratio, computes a command for a power supply unit in a feed forward control section according to a command based on the function and on the power, duty ratio and frequency, computes a command for a power supply unit in the feedback control section from a power command value and a power measurement value from the power sensor, and inputs these command to the power supply unit. Also the laser machining apparatus detects changes in characteristics in the laser oscillator and corrects the function for characteristics of the laser oscillator.

Abstract: Disclosed is a method for producing methacrolein, which comprises subjecting isobutylene and/or tert-butanol to gas phase catalytic oxidation with a molecular oxygen-containing gas in the presence of an oxide catalyst composition represented by the formula Mo.sub.12 Bi.sub.a Ce.sub.b K.sub.c A.sub.e B.sub.f O.sub.g, wherein A is Co solely, or a mixture of Co and Mg wherein the atomic ratio of Mg to Co is not more than 0.7, B is Rb, Cs or a mixture thereof, and a, b, c, d, e, f and g are, respectively, the specific atomic ratios of Bi, Ce, K, Fe, A, B and O, relative to 12 atoms of Mo.

Abstract: In pulse welding apparatus of arc welding or short-circuit transfer type arc welding in which a pulse discharge created on the tip of a wire electrode is utilized to perform welding, when a molten droplet produced on the tip of wire electrode is late to separate from the wire due to variations of welding conditions and external disturbances, the wire-supplying speed at which the wire is supplied to the weld zone changes causing undercut. To prevent this, pulse current supplied to the base metal is divided into a plurality of pulse groups and the average current reaches the maximum peak value at a predetermined time after beginning of outputting the pulses, and the group of pulse currents is of a hill-shape in its envelope in accordance with the separation phenomenon of molten droplet, and the group of pulse currents is arranged to have different pulse period, pulse width, and pulse interval.

Abstract: Disclosed is an ammoxidation catalyst composition for use in producing acrylonitrile from propylene, or methacrylonitrile from isobutene or tert-butanol, by ammoxidation of the propylene or of the isobutene or tert-butanol, comprising an oxide catalyst composition represented by the formula:Mo.sub.12 (Bi.sub.1-a A.sub.a).sub.b Fe.sub.c Ni.sub.d X.sub.e Y.sub.f O.sub.g,whereinA is at least one rare earth element,X is at least one element selected from magnesium and zinc,Y is at least one element selected from potassium, rubidium and cesium,a is a number of from 0.6 to 0.8,b is a number of from 0.5 to 2,c is a number of from 0.1 to 3,d is a number of from 4 to 10,e is a number of from 0 to 3,f is a number of from 0.01 to 2, andg is a number determined by the valence requirements of the other elements present.

Abstract: A laser oscillator is connected to a power supply device for supplying excitation power to the laser oscillator and a detector is connected to detect the intensity of a laser beam output by the laser oscillator. An apparatus is provided for measuring the resistance value of the detector. A control circuit is operative to provide constant laser power control in response to the detector output under normal conditions but when the output signal of the measuring apparatus indicates a failure, the constant laser output control is changed to the constant power control. The apparatus prevents a constant laser output control from being disabled and workpieces from being defective if the output detector property of a laser changes abruptly.

Abstract: A laser oscillator is connected to a power supply device for supplying excitation power to the laser oscillator and a detector is connected to detect the intensity of a laser beam output by the laser oscillator. An apparatus is provided for measuring the resistance value of the detector. A control circuit is operative to provide constant laser power control in response to the detector output under normal conditions but when the output signal of the measuring apparatus indicates a failure, the constant laser output control is changed to the constant power control. The apparatus prevents a constant laser output control from being disabled and workpieces from being defective if the output detector property of a laser changes abruptly.