Patents by Inventor Osamu NUKAGA

Osamu NUKAGA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210242556
    Abstract: A high-frequency passive component includes a substrate formed of a dielectric material including a waveguide region, a waveguide structure in which a first wide wall, a second wide wall, and a plurality of penetrating electrodes are arranged so as to surround the waveguide region, a first dielectric layer located outside the first wide wall, a second dielectric layer formed on the first wide wall, and an upper conductor layer. The upper conductor layer is formed over the first dielectric layer, the substrate between the first dielectric layer and the first wide wall, and the first wide wall.
    Type: Application
    Filed: June 27, 2019
    Publication date: August 5, 2021
    Applicant: Fujikura Ltd.
    Inventors: Osamu Nukaga, Masaru Bunya, Lei Xu
  • Patent number: 9399789
    Abstract: Disclosed is a substrate (10A) for trapping a microorganism or cell (T), characterized by comprising a base (4) and having a space (2) into which a fluid (R) containing the microorganism or cell (T) is introduced and a microfine suction hole (1) through which the space (2) communicates with the outside of the base (4). The substrate is further characterized in that the space (2) has been formed in the base (4), and at least the portion of the base (4) which forms the microfine suction hole (1) is constituted of a single member.
    Type: Grant
    Filed: January 15, 2013
    Date of Patent: July 26, 2016
    Assignees: FUJIKURA LTD., THE UNIVERSITY OF TOKYO
    Inventors: Osamu Nukaga, Satoshi Yamamoto, Kazuhito Tabata, Masakazu Sugiyama, Shoji Takeuchi
  • Patent number: 9358512
    Abstract: A fluid control device for mixing liquids, includes at least: a monolithic base body; and a plurality of micro holes disposed in the base body. Also, the micro holes in a flow channel group ? that configures a specific group have opening portions in a region A and a region B on surfaces being outer surfaces of the base body, the micro holes in a flow channel group ? (n) that configures the other specific group have opening portions in the region A and a region C (n) on the surfaces being outer surfaces of the base body, and in the base body, the micro holes are disposed apart from the micro holes belonging to the different flow channel group throughout entire lengths. Here, the n refers to a natural number.
    Type: Grant
    Filed: April 24, 2014
    Date of Patent: June 7, 2016
    Assignee: FUJIKURA LTD.
    Inventors: Satoshi Yamamoto, Hiroyuki Wakioka, Osamu Nukaga, Tatsuya Shioiri
  • Publication number: 20140326702
    Abstract: A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.
    Type: Application
    Filed: July 15, 2014
    Publication date: November 6, 2014
    Applicants: FUJIKURA LTD., THE UNIVERSITY OF TOKYO
    Inventors: Osamu NUKAGA, Satoshi YAMAMOTO, Kazuhito TABATA, Masakazu SUGIYAMA
  • Publication number: 20140231390
    Abstract: A method of manufacturing a substrate including a micro hole, includes: setting a scanning rate (?m/sec) of pulsed laser light to 1×103 to 4000×103 ?m/sec; adjusting a repetition rate (Hz) of the laser light so that a pulse pitch (?m) represented by the following Formula (1) is 0.08 to 0.8 ?m; scanning the inside of the substrate with the focal point into which the laser light is collected, thereby forming a modified region having a lowered resistance to etching, at a region through which the focal point passed or at an adjacent region thereof; and forming a micro hole in the substrate by removing the modified region by an etching treatment.
    Type: Application
    Filed: April 30, 2014
    Publication date: August 21, 2014
    Applicant: FUJIKURA LTD.
    Inventors: Osamu NUKAGA, Satoshi YAMAMOTO, Hiroyuki WAKIOKA
  • Publication number: 20140233348
    Abstract: A fluid control device for mixing liquids, includes at least: a monolithic base body; and a plurality of micro holes disposed in the base body. Also, the micro holes in a flow channel group ? that configures a specific group have opening portions in a region A and a region B on surfaces being outer surfaces of the base body, the micro holes in a flow channel group ? (n) that configures the other specific group have opening portions in the region A and a region C (n) on the surfaces being outer surfaces of the base body, and in the base body, the micro holes are disposed apart from the micro holes belonging to the different flow channel group throughout entire lengths. Here, the n refers to a natural number.
    Type: Application
    Filed: April 24, 2014
    Publication date: August 21, 2014
    Applicant: FUJIKURA LTD.
    Inventors: Satoshi YAMAMOTO, Hiroyuki WAKIOKA, Osamu NUKAGA, Tatsuya SHIOIRI
  • Publication number: 20130309445
    Abstract: A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.
    Type: Application
    Filed: July 26, 2013
    Publication date: November 21, 2013
    Applicants: The University Of Tokyo, Fujikura Ltd.
    Inventors: Osamu NUKAGA, Satoshi YAMAMOTO, Kazuhito TABATA, Masakazu SUGIYAMA
  • Publication number: 20130230912
    Abstract: A base body includes: a base member; a channel provided in the base member, the channel having an inner wall surface and flowing a fluid; a fine vacuum hole provided in the inner wall, the fine vacuum hole causing the channel to communicate the outside of the base member other and having an opening; and a slow flow portion disposed at a position close to the opening of the fine vacuum hole in the inner wall surface, the slow flow portion slows a flow of the fluid, wherein at least a portion that configures the fine vacuum hole in the base member is formed of a single member.
    Type: Application
    Filed: March 29, 2013
    Publication date: September 5, 2013
    Applicants: The University of Tokyo, FUJIKURA LTD.
    Inventors: Osamu NUKAGA, Satoshi YAMAMOTO, Kazuhito TABATA, Masakazu SUGIYAMA
  • Publication number: 20120308765
    Abstract: A nanostructure forming method includes: preparing a substrate having an appropriate processing value; applying laser beam having a pulse duration of picosecond order or less to a planar surface oriented in a propagation direction of the laser beam and a direction perpendicular to a polarization direction (electric field direction) of the laser beam in the interior of the substrate at an irradiation intensity which is close to the appropriate processing value of the substrate; forming a structure-modified portion at a focus at which the laser beam is concentrated and in a region which is close to the focus; and forming a nanostructure formed of a nano-hole by selectively etching the structure-modified portion.
    Type: Application
    Filed: August 3, 2012
    Publication date: December 6, 2012
    Applicants: FUJIKURA LTD., THE UNIVERSITY OF TOKYO, BIO ELECTRO-MECHANICAL AUTONOMOUS NANO SYSTEMS LABORATORY TECHNOLOGY RESEARCH ASSOCIATION
    Inventors: Osamu NUKAGA, Seiji SAMUKAWA, Masakazu SUGIYAMA
  • Publication number: 20120295066
    Abstract: A surface nanostructure forming method includes: preparing a substrate having an appropriate processing value; a first process of irradiating a part which is close to a surface of the substrate with laser light having a pulse duration of picosecond order or shorter at an irradiation intensity being close to the appropriate processing value of the substrate, or greater than or equal to the appropriate processing value and less than or equal to an ablation threshold and forming periodic nanostructures in which first modified portions and second modified portions are periodically arranged in a self-assembled manner at a focus at which the laser light is concentrated and in a region being close to the focus; and a second process of performing an etching treatment on the surface of the substrate having the periodic nanostructures formed thereon to form an uneven structure having the first modified portions as valleys.
    Type: Application
    Filed: August 3, 2012
    Publication date: November 22, 2012
    Applicants: FUJIKURA LTD., THE UNIVERSITY OF TOKYO, BIO ELECTRO-MECHANICAL AUTONOMOUS NANO SYSTEMS LABORATORY TECHNOLOGY RESEARCH ASSOCIATION
    Inventors: Osamu NUKAGA, Satoshi YAMAMOTO, Seiji SAMUKAWA, Masakazu SUGIYAMA
  • Publication number: 20110129999
    Abstract: Provided is a method for manufacturing a semiconductor device including: an electrode formation step of forming an electrode on one surface of a semiconductor substrate; a through hole formation step of forming a through hole starting from a position on the other surface corresponding to the position of the electrode; a first insulating layer formation step of forming a first insulating layer on at least an inner circumferential surface, a periphery of an opening, and a bottom surface of the through hole; a modifying step of reforming a first portion of the first insulating layer formed on the bottom surface of the through hole; a modified region removal step of removing the modified region; and a conductive layer formation step of forming a conductive layer on the electrode exposed inside the through hole and on the first insulating layer such that the conductive layer is electrically connected with the electrode.
    Type: Application
    Filed: February 3, 2011
    Publication date: June 2, 2011
    Applicant: FUJIKURA LTD.
    Inventors: Osamu NUKAGA, Satoshi YAMAMOTO