Patents by Inventor Osamu Samuel Nakagawa

Osamu Samuel Nakagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240105633
    Abstract: Disclosed is a wafer-scale chip structure including a semiconductor wafer and multiple dies on the semiconductor wafer. The dies can include at least two dies with different patterns of fill shapes. Also disclosed are wafer-scale chip design methods and systems. In the design methods and systems, post-chip layout wafer-level topography optimization is performed to, for example, minimize performance variations between dies of the same design within the wafer-scale chip. Specifically, across-wafer die placement and wafer-level topography information is used to custom design and/or select different patterns of fill shapes to be inserted into the layouts of dies placed at different locations across the wafer-scale chip (including different patterns to be inserted into the layouts of dies that have the same design) in order to generate a design that minimizes either all across-wafer thickness variations or at least across-wafer thickness variations associated with specific dies having the same specific design.
    Type: Application
    Filed: September 27, 2022
    Publication date: March 28, 2024
    Inventors: Osamu Samuel Nakagawa, Ushasree Katakamsetty, Howard S. Landis, Stefan Nikolaev Voykov
  • Patent number: 7313503
    Abstract: A system and method to model and design a layout of an Internet Datacenter (IDC) for cooling. The IDC is defined as a collection of cells, the cells of the IDC are pre-characterized, an arrangement of the cells within the IDC is determined, and a profile for one or more parameters of interest for each cell are determined.
    Type: Grant
    Filed: February 19, 2002
    Date of Patent: December 25, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Osamu Samuel Nakagawa, Cullen Bash, Chandrakant Patel, Abdlmonem Beitelmal
  • Patent number: 6981231
    Abstract: A system and method to reduce leakage power consumption of electronic devices. In addition to assigning threshold voltages, sizes of the transistors within the device may be varied to provide a range of options to meet the timing requirements while minimizing the leakage power consumption.
    Type: Grant
    Filed: February 22, 2002
    Date of Patent: December 27, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Weize Xie, Norman Chang, Shen Lin, Osamu Samuel Nakagawa
  • Publication number: 20040082175
    Abstract: A method or process of manufacturing on-chip bypass capacitors on a VLSI device (or chip) is improved by utilizing a high-dielectric constant metal-insulator-metal (MIM) capacitor manufacturing process. The high-k constant MIM capacitor may include a lower electrode in a first metal layer of a VLSI device, a substantially thin layer of high-k insulator (e.g., silicon nitride at an interface of the first metal layer and a via, and an upper electrode form in a second metal layer. The via provides a channel between the second metal layer to the high-k insulator.
    Type: Application
    Filed: October 22, 2003
    Publication date: April 29, 2004
    Inventor: Osamu Samuel Nakagawa
  • Patent number: 6661281
    Abstract: A method reduces noise resulting from a current surge in a circuit. A plurality of loading elements, parallel with the circuit being protected, are connected sequentially and disconnected. The connection of the loading elements results in a ramping up of current through the circuit without a sudden surge. In a preferred embodiment, an apparatus for slowing a current change in a circuit is described. The apparatus comprises a plurality of loading elements placed in parallel with the circuit, each of the elements providing a path for current flow, and a control circuit for selectively opening or closing at least one of said paths to prevent or enable current flow through the at least one of the paths.
    Type: Grant
    Filed: November 29, 2001
    Date of Patent: December 9, 2003
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Osamu Samuel Nakagawa, Norman Chang, Shen Lin, Weize Xie, Xuejue Huang
  • Patent number: 6621305
    Abstract: A logic gate circuit and related methods and apparatus exhibit reduced voltage swing and thereby consume less power. The circuit is connected to a plurality of input signals and a clock signal. The circuit produces an output. The circuit comprises a node, a pull-down network and an N-type MOS transistor. The pull-down network is connected to the node, a first reference voltage, the plurality of inputs and the clock signal. The N-type MOS transistor is connected between the node and a second reference voltage. The N-type MOS transistor is also connected to a complement of the clock signal. A method of the invention accepts a complement of a clock signal and pre-charges a node to a voltage less than a power supply voltage, in response to the complement of the clock signal. The method also accepts a plurality of input signals and accepts the clock signal. The method conditionally discharges the node, in response to the clock signal, on the basis of the plurality of input signals.
    Type: Grant
    Filed: August 3, 2001
    Date of Patent: September 16, 2003
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Osamu Samuel Nakagawa, Norman Chang, Shen Lin, Weize Xie, Kenynmyung Lee
  • Publication number: 20030163792
    Abstract: A system and method to reduce leakage power consumption of electronic devices. In addition to assigning threshold voltages, sizes of the transistors within the device may be varied to provide a range of options to meet the timing requirements while minimizing the leakage power consumption.
    Type: Application
    Filed: February 22, 2002
    Publication date: August 28, 2003
    Inventors: Weize Xie, Norman Chang, Shen Lin, Osamu Samuel Nakagawa
  • Publication number: 20030158718
    Abstract: A system and method to model and design a layout of an Internet Datacenter (IDC) for cooling. The IDC is defined as a collection of cells, the cells of the IDC are pre-characterized, an arrangement of the cells within the IDC is determined, and a profile for one or more parameters of interest for each cell are determined.
    Type: Application
    Filed: February 19, 2002
    Publication date: August 21, 2003
    Inventors: Osamu Samuel Nakagawa, Cullen Bash, Chandrakant Patel, Abdlmonem Beitelmal
  • Publication number: 20030098742
    Abstract: A method reduces noise resulting from a current surge in a circuit. A plurality of loading elements, parallel with the circuit being protected, are connected sequentially and disconnected. The connection of the loading elements results in a ramping up of current through the circuit without a sudden surge. In a preferred embodiment, an apparatus for slowing a current change in a circuit is described. The apparatus comprises a plurality of loading elements placed in parallel with the circuit, each of the elements providing a path for current flow, and a control circuit for selectively opening or closing at least one of said paths to prevent or enable current flow through the at least one of the paths.
    Type: Application
    Filed: November 29, 2001
    Publication date: May 29, 2003
    Inventors: Osamu Samuel Nakagawa, Norman Chang, Shen Lin, Weize Xie, Xuejue Huang
  • Patent number: 6567960
    Abstract: An RLC module is configured to provide a simplified circuit modeling of a selected circuit net (or portion) of an electronic circuit. The RLC module may be configured to substitute an RLC circuit model for the selected circuit net, where the effective values of the capacitance and inductance for the RLC circuit model are retrieved from a table of capacitance and inductance values. A set of interconnect geometry factors (e.g., line length, line width, driver/receiver length, etc.) that describes the circuit net is used as an index into the table of capacitance and inductance values. The retrieved values of the effective capacitance and inductances values may be used to calculate a delay for the RLC circuit model. The RLC module may provide the capability to quickly calculate a delay for a selected circuit net without using computationally intensive calculations for inductance and capacitance values of circuit nets.
    Type: Grant
    Filed: October 9, 2001
    Date of Patent: May 20, 2003
    Assignee: Hewlett-Packard Development L.P.
    Inventors: Norman Chang, Yu Cao, Osamu Samuel Nakagawa, Shen Lin, Weize Xie
  • Publication number: 20030084353
    Abstract: Power surges in electrical systems, such as microprocessors, may be reduced by gradually applying power to resources, such as the floating point unit, to an active state. Also, performance penalty may be minimized by predicting ahead of time when a resource will be needed. In this manner, the power to the resource may be gradually applied so that the resource is active when it is actually needed. Modules may be included that predicts when a resource is needed based on instructions prefetched instruction from a pipeline of a microprocessor. Based on the prediction, power control modules may control the power to the necessary resource gradually.
    Type: Application
    Filed: October 31, 2001
    Publication date: May 1, 2003
    Inventors: Norman Chang, Zhenyu Tang, Osamu Samuel Nakagawa, Shen Lin, Weize Xie
  • Publication number: 20030070148
    Abstract: An RLC module is configured to provide a simplified circuit modeling of a selected circuit net (or portion) of an electronic circuit. The RLC module may be configured to substitute an RLC circuit model for the selected circuit net, where the effective values of the capacitance and inductance for the RLC circuit model are retrieved from a table of capacitance and inductance values. A set of interconnect geometry factors (e.g., line length, line width, driver/receiver length, etc.) that describes the circuit net is used as an index into the table of capacitance and inductance values. The retrieved values of the effective capacitance and inductances values may be used to calculate a delay for the RLC circuit model. The RLC module may provide the capability to quickly calculate a delay for a selected circuit net without using computationally intensive calculations for inductance and capacitance values of circuit nets.
    Type: Application
    Filed: October 9, 2001
    Publication date: April 10, 2003
    Inventors: Norman Chang, Yu Cao, Osamu Samuel Nakagawa, Shen Lin, Weize Xie
  • Publication number: 20030030467
    Abstract: A logic gate circuit and related methods and apparatus exhibit reduced voltage swing and thereby consume less power. The circuit is connected to a plurality of input signals and a clock signal. The circuit produces an output. The circuit comprises a node, a pull-down network and an N-type CMOS transistor. The pull-down network is connected to the node, a first reference voltage, the plurality of inputs and the clock signal. The N-type CMOS transistor is connected between the node and a second reference voltage. The N-type CMOS transistor is also connected to a complement of the clock signal. A method of the invention accepts a complement of a clock signal and pre-charges a node to a voltage less than a power supply voltage, in response to the complement of the clock signal. The method also accepts a plurality of input signals and accepts the clock signal. The method conditionally discharges the node, in response to the clock signal, on the basis of the plurality of input signals.
    Type: Application
    Filed: August 3, 2001
    Publication date: February 13, 2003
    Inventors: Osamu Samuel Nakagawa, Norman Chang, Shen Lin, Weize Xie, Keumyung Lee
  • Publication number: 20030001188
    Abstract: A method or process of manufacturing on-chip capacitors on a VLSI device (or chip) is improved by utilizing a high-dielectric constant metal-insulator-metal (MIM) capacitor manufacturing process. The high-k constant MIM capacitor may include a lower electrode in a first metal layer of a VLSI device, a substantially thin layer of high-k insulator (e.g., silicon nitride at an interface of the first metal layer and a via, and an upper electrode form in a second metal layer. The via provides a channel between the second metal layer to the high-k insulator. The on-chip capacitors may be fabricated in a variety of configurations such as a parallel line, parallel plate or in a cross-over area of two different metal lines.
    Type: Application
    Filed: June 27, 2001
    Publication date: January 2, 2003
    Inventor: Osamu Samuel Nakagawa
  • Publication number: 20030003665
    Abstract: A method or process of manufacturing on-chip bypass capacitors on a VLSI device (or chip) is improved by utilizing a high-dielectric constant metal-insulator-metal (MIM) capacitor manufacturing process. The high-k constant MIM capacitor may include a lower electrode in a first metal layer of a VLSI device, a substantially thin layer of high-k insulator (e.g., silicon nitride at an interface of the first metal layer and a via, and an upper electrode form in a second metal layer. The via provides a channel between the second metal layer to the high-k insulator.
    Type: Application
    Filed: June 27, 2001
    Publication date: January 2, 2003
    Inventor: Osamu Samuel Nakagawa
  • Patent number: 6462607
    Abstract: A ramp loading circuit for slowing current change in a circuit block. The circuit may include a plurality of load circuits placed in parallel with the circuit block and a control circuit. Each load circuit may provide a path for current flow when the load circuit is activated. Each load circuit may also be configured to allow a gradual decrease in current flow through the path when the load circuit is deactivated. The control circuit may be configured to deactivate each load circuit before the circuit block enters the sleep mode.
    Type: Grant
    Filed: November 29, 2001
    Date of Patent: October 8, 2002
    Assignee: Hewlett-Packard Company
    Inventor: Osamu Samuel Nakagawa