Abstract: A solar cell (1) according to the invention is formed by stacking a first electrode layer (1C), a semiconductor layer (1A), and a second electrode layer (1D). The first electrode layer (1C) is placed on a light-irradiated surface side of the semiconductor layer (1A). The first electrode layer (1C) and the semiconductor layer (1A) are joined together with a Schottky junction interface in between. The second electrode layer (1D) is placed on an opposite side of the semiconductor layer (1A) from the light-irradiated surface. The second electrode layer (1D) and the semiconductor layer (1A) are joined together in ohmic contact with each other. The first electrode layer (1C) includes a visible light absorbing material.

Abstract: An object and project of the present invention is to provide a method for producing silicon fine particles and a method for controlling a particle diameter of silicon fine particles which enable efficient production of silicon fine particles having a uniform particle diameter. A the characteristics of the present invention is producing silicon fine particles having a smaller particle diameter than silicon particles and controlling a particle diameter of silicon fine particles by immersing the silicon particles into an etching solution and irradiating the silicon particles immersed in the etching solution with light having a larger energy than a band gap energy of the silicon particles.

Abstract: An object and project of the present invention is to provide a method for producing silicon fine particles and a method for controlling a particle diameter of silicon fine particles which enable efficient production of silicon fine particles having a uniform particle diameter.

Abstract: (1) Disclosed is a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said thin film transistor being characterized in that the channel layer is formed of an indium oxide film that is doped with tungsten and zinc and/or tin. (2) Disclosed is a bipolar thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said bipolar thin film transistor being characterized in that the channel layer is a laminate of an organic material film and a metal oxide film that contains indium doped with at least one of tungsten, tin or titanium and has an electrical resistivity that is controlled in advance.

Abstract: In the particles for display media used for an information display panel, in which at least one group of display media are sealed between two opposed substrates, at least one of two substrates being transparent, and, in which the display media, to which an electrostatic field is applied, are made to move so as to display information such as an image, a material having electric properties of a semiconductor is provided on a surface of the particles. According to the invention, since use is made of the particle whose surface has electric properties of a semiconductor, it is possible to maintain stably a surface charge of the particle for display media. As a result, it is possible to obtain an information display panel having a stable information display state such as an image.

Abstract: In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. Therefore, it is possible to obtain the thin-film transistor, which can manufacture an element to a polymer substrate without using a high temperature process and which can achieve a high performance and a high reliability at low cost.

Abstract: An electrolyte for dye-sensitized solar cells, wherein an oxidation-reduction substance is carried by a vulcanized rubber, a phosphazene polymer, a porous body comprising a high molecular material which has a three-dimensional continuous network skeleton structure, or an EVA resin film. A dye-sensitized solar cell comprising dye-sensitized semiconductor electrodes 2, 3, a counter electrode 4 arranged at an opposed position to the electrodes, and an electrolyte 6 between the electrodes 2, 3 and the electrode 4. A solid electrolyte for dye-sensitized solar cells effective in improving the generation efficiency, durability, and safety of dye-sensitized solar cells and can be manufactured inexpensively.