Abstract: An uneven pattern detector has a structure wherein (a) detecting elements, each being provided with a TFT which is a switching element and a detecting electrode, are arranged in a matrix manner, and (b) a CSA connected to each data line detects charged or discharged electric charges at the respective detecting elements on respective rows sequentially selected by a gate line, whereby a capacitance (a coupled capacitance of Cf and Cx) reflecting fingerprint unevenness on a finger as a detection object can be detected. In the uneven pattern detector, each of the detecting elements is provided with an auxiliary capacitor electrode located so as to face the detecting electrode. This forms an auxiliary capacitor Cs between the auxiliary capacitor electrode and the detecting electrode.

Abstract: The image reading device of the present invention includes (i) a sensor substrate which functions as a photoelectric transfer element having a photodetecting TFT and a pixel capacitor and (ii) a driving IC for applying a voltage to a gate electrode of the photodetecting TFT so as to drive the photodetecting TFT into an ON state or an OFF state. The driving IC applies a voltage, whose polarity is opposite to average polarity of a voltage making the photodetecting TFT in the OFF state, to the gate electrode of the photodetecting TFT in an arbitrary period. Thus, it is possible to provide the image reading device which can suppress variation of a photodetecting TFT property (resistance value) which is observed in a short time.

Abstract: A detector panel having a bias application electrode and a converter layer formed on a supporting substrate, and a readout panel (active matrix panel), are bonded to each other directly through a single layer of electroconductive resin. That is, a pattern of photosensitive resin is formed before-hand on reading electrodes of the readout panel, and this readout panel and the converter layer are bonded together directly. Since the converter layer has no pixel electrodes formed thereon, the converter layer need not be smoothed, and the two panels need not be positionally adjusted to each other with high precision.

Abstract: What are formed on an insulating substrate are gate electrodes and data electrodes provided in a grid pattern, a TFT provided in each grid and connected to the gate electrode and the data electrode, an interlayer insulating film formed on the TFT and including a contact hole penetrating the film itself, and a sense electrode provided on the interlayer insulating film and passing through the contact hole. On the interlayer insulating film, an upper layer insulating film is formed so as to cover the sense electrode. A surface of the interlayer insulating film in which surface the sense electrode is formed is flat. On this account, it is possible to provide an uneven pattern sensing device capable of smoothing out a surface thereof without any increase of the manufacturing process and limitation of a choice of materials for a protective film.

Abstract: A composite active-matrix substrate includes: a plurality of active-matrix substrates which are disposed adjacent to one another; a base substrate which is disposed to oppose a bottom surface of the active-matrix substrates; a sealant which is disposed in the form of a frame between the active-matrix substrate and the base substrate; a first filler which fills a spacing surrounded by the active-matrix substrate, the base substrate, and the sealant; and a second filler which fills a gap between edges of the active-matrix substrates. The sealant prevents the first filler from seeping out. In this way, seeping of an adhesive filler can be prevented in the arrangement where a plurality of active-matrix substrates are fixed on the base substrate using the adhesive filler. An electromagnetic wave capturing device according to the present invention uses such a composite active-matrix substrate.

Abstract: In a two-dimensional image detecting device, an active-matrix substrate and an opposing substrate are bonded to each other via conductive connecting members and space keeping members, that are disposed respectively for pixels, such that pixel electrodes and electrical charge collecting electrodes oppose each other. The pixel electrodes are formed on the active-matrix substrate, and the electrical charge collecting electrodes are formed on the opposing substrate. Further, when a resin material of the space keeping members is soft, reinforcing members, which have electrical insulation and are hardly deformed in a thermocompression bonding, are dispersed into the resin material, so that the space keeping ability is fully exhibited. According to this arrangement, it is possible to improve the responsivity so as to respond to a moving image. Additionally, an even space can be achieved between the substrates, and it is possible to prevent a connecting defect and a defect caused by a leak between the substrates.

Abstract: An active-matrix substrate is provided with electrode wires disposed in a lattice form, a plurality of switching elements disposed respectively at intersections of the electrode wires, and connecting terminals for connecting the electrode wires to the outside, the electrode wires include metal electrodes, and at least parts of the connecting terminals have a property of transmitting light. A two-dimensional image detector includes the active-matrix substrate and the amorphous semiconductor layer, which is formed on the active-matrix substrate and has electromagnetic wave conductivity. The connecting terminals are connected with the outside via an anisotropic conductive adhesive having photo-reactivity. A display device includes the active-matrix substrate and an opposing substrate which is disposed so as to oppose the active-matrix substrate via an electro-optical medium, and the connecting terminals are connected to the outside via an anisotropic conductive adhesive having photo-reactivity.

Abstract: A composite active-matrix substrate includes: a plurality of active-matrix substrates which are disposed adjacent to one another; a base substrate which is disposed to oppose a bottom surface of the active-matrix substrates; a sealant which is disposed in the form of a frame between the active-matrix substrate and the base substrate; a first filler which fills a spacing surrounded by the active-matrix substrate, the base substrate, and the sealant; and a second filler which fills a gap between edges of the active-matrix substrates. The sealant prevents the first filler from seeping out. In this way, seeping of an adhesive filler can be prevented in the arrangement where a plurality of active-matrix substrates are fixed on the base substrate using the adhesive filler. An electromagnetic wave capturing device according to the present invention uses such a composite active-matrix substrate.

Abstract: The present two-dimensional image sensor is constituted by: a photoconductive film for converting electromagnetic radiation carrying image information to electric charge; an active matrix substrate including: a pixel accommodating layer for accommodating pixel electrodes connected to the photoconductive film to accumulate the electric charge in the photoconductive film; a wiring layer, located opposite the pixel electrodes across the pixel accommodating layer, for providing gate lines, source lines, etc. to detect the accumulated electric charge; and first and second insulating protection layers interposed between the pixel accommodating layer and the wiring layer; and a common electrode, located opposite the pixel accommodating layer across the photoconductive film, for developing an electric field between itself and the pixel electrodes, wherein: the common electrode is provided in a pixel region in which the pixel electrodes are disposed.

Abstract: A TFT array is formed on a glass substrate (step P1). A surface protection layer is formed on the glass substrate so as to cover the TFT array (step P2). The glass substrate is divided to form active matrix, substrates with the surface protection layer being provided (step P3). The divided active matrix substrate is chamfered along its edges (step P4). The surface protection layer is removed from the active matrix substrate (step P5). An X-ray conductive layer is formed on the TFT array where the surface protection layer has been removed (step P6). By these steps, pollutants produced during the division and chamfering of the glass substrate are prevented from polluting the TFT array and the X-ray conductive layer, and the active element array and the semiconductor layer is prevented from deteriorating in terms of performance in manufacturing process for a two-dimensional image detector.

Abstract: A TFT array is formed on a glass substrate (step P1) A surface protection layer is formed on the glass substrate so as to cover the TFT a-ray (step P2). The glass substrate is divided to form active matrix substrates with the surface protection layer being provided (step P3). The divided active matrix substrate is chamfered along its edges (step P4). The surface protection layer is removed from the active matrix substrate (step P5). An X-ray conductive layer is formed on the TFT array where the surface protection layer has been removed (step P6). By these steps, pollutants produced during the division and chamfering of the glass substrate are prevented from polluting the TFT array and the X-ray conductive layer, and the active element array and the semiconductor layer is prevented from deteriorating in terms of performance in manufacturing process for a two-dimensional image detector.

Abstract: The invention provides a two-dimensional image detector having superior uniformity in thickness and composition of a photoconductive layer with respect to the entire substrate, and a method of productively (efficiently) and inexpensively manufacturing such a two-dimensional image detector. The two-dimensional image detector includes at least an active matrix substrate 1 having a plurality of pixel electrodes 10, and a photoconductive layer 2 stacked on the pixel electrodes 10, wherein the photoconductive layer 2 is transferred to the active matrix substrate 1 after being formed in a predetermined thickness on a transfer substrate. That is, a fabrication method of the two-dimensional image detector is the method in which the photoconductive layer 2 is formed in advance in a predetermined thickness on the transfer substrate and then transferred on the active matrix substrate 1. The photoconductive layer 2 includes a mixture of particulate photoconductors and a binder.

Abstract: An active-matrix substrate is provided with electrode wires disposed in a lattice form, a plurality of switching elements disposed respectively at intersections of the electrode wires, and connecting terminals for connecting the electrode wires to the outside, the electrode wires include metal electrodes, and at least parts of the connecting terminals have a property of transmitting light. A two-dimensional image detector includes the active-matrix substrate and the amorphous semiconductor layer, which is formed on the active-matrix substrate and has electromagnetic wave conductivity. The connecting terminals are connected with the outside via an anisotropic conductive adhesive having photo-reactivity. A display device includes the active-matrix substrate and an opposing substrate which is disposed so as to oppose the active-matrix substrate via an electro-optical medium, and the connecting terminals are connected to the outside via an anisotropic conductive adhesive having photo-reactivity.

Abstract: A TFT array is formed on a glass substrate (step P1) A surface protection layer is formed on the glass substrate so as to cover the TFT a-ray (step P2). The glass substrate is divided to form active matrix substrates with the surface protection layer being provided (step P3). The divided active matrix substrate is chamfered along its edges (step P4). The surface protection layer is removed from the active matrix substrate (step P5). An X-ray conductive layer is formed on the TFT array where the surface protection layer has been removed (step P6). By these steps, pollutants produced during the division and chamfering of the glass substrate are prevented from polluting the TFT array and the X-ray conductive layer, and the active element array and the semiconductor layer is prevented from deteriorating in terms of performance in manufacturing process for a two-dimensional image detector.

Abstract: A TFT array is formed on a glass substrate (step P1). A surface protection layer is formed on the glass substrate so as to cover the TFT array (step P2). The glass substrate is divided to form active matrix substrates with the surface protection layer being provided (step P3). The divided active matrix substrate is chamfered along its edges (step P4). The surface protection layer is removed from the active matrix substrate (step P5). An X-ray conductive layer is formed on the TFT array where the surface protection layer has been removed (step P6). By these steps, pollutants produced during the division and chamfering of the glass substrate are prevented from polluting the TFT array and the X-ray conductive layer, and the active element array and the semiconductor layer is prevented from deteriorating in terms of performance in manufacturing process for a two-dimensional image detector.

Abstract: When TCP substrates serving as external circuits are packaged by thermocompression bonding onto input/output terminals on an active-matrix substrate including an a-Se film serving as an amorphous semiconductor layer, a cooling operation is performed by a cooling medium discharging nozzle on at least a part between the a-Se film and a thermocompression bonding part disposed between the TCP substrates and the input/output terminals on the active-matrix substrate. Thus, during the thermocompression bonding, a temperature of the a-Se film is maintained below its crystallizing temperature so as to prevent exfoliation of the amorphous semiconductor film and deterioration in characteristics thereof, upon packaging the external circuits by thermocompression bonding onto the input/output terminals on the substrate including the amorphous semiconductor film.

Abstract: A TFT array is formed on a glass substrate (step P1). A surface protection layer is formed on the glass substrate so as to cover the TFT array (step P2). The glass substrate is divided to form active matrix substrates with the surface protection layer being provided (step P3). The divided active matrix substrate is chamfered along its edges (step P4). The surface protection layer is removed from the active matrix substrate (step P5). An X-ray conductive layer is formed on the TFT array where the surface protection layer has been removed (step P6). By these steps, pollutants produced during the division and chamfering of the glass substrate are prevented from polluting the TFT array and the X-ray conductive layer, and the active element array and the semiconductor layer is prevented from deteriorating in terms of performance in manufacturing process for a two-dimensional image detector.

Abstract: An active-matrix substrate is provided with electrode wires disposed in a lattice form, a plurality of switching elements disposed respectively at intersections of the electrode wires, and connecting terminals for connecting the electrode wires to the outside, the electrode wires include metal electrodes, and at least parts of the connecting terminals have a property of transmitting light. A two-dimensional image detector includes the active-matrix substrate and the amorphous semiconductor layer, which is formed on the active-matrix substrate and has electromagnetic wave conductivity. The connecting terminals are connected with the outside via an anisotropic conductive adhesive having photo-reactivity. A display device includes the active-matrix substrate and an opposing substrate which is disposed so as to oppose the active-matrix substrate via an electro-optical medium, and the connecting terminals are connected to the outside via an anisotropic conductive adhesive having photo-reactivity.

Abstract: An uneven pattern detector has a structure wherein (a) detecting elements, each being provided with a TFT which is a switching element and a detecting electrode, are arranged in a matrix manner, and (b) a CSA connected to each data line detects charged or discharged electric charges at the respective detecting elements on respective rows sequentially selected by a gate line, whereby a capacitance (a coupled capacitance of Cf and Cx) reflecting fingerprint unevenness on a finger as a detection object can be detected. In the uneven pattern detector, each of the detecting elements is provided with an auxiliary capacitor electrode located so as to face the detecting electrode. This forms an auxiliary capacitor Cs between the auxiliary capacitor electrode and the detecting electrode.

Abstract: A composite active-matrix substrate includes: a plurality of active-matrix substrates which are disposed adjacent to one another; a base substrate which is disposed to oppose a bottom surface of the active-matrix substrates; a sealant which is disposed in the form of a frame between the active-matrix substrate and the base substrate; a first filler which fills a spacing surrounded by the active-matrix substrate, the base substrate, and the sealant; and a second filler which fills a gap between edges of the active-matrix substrates. The sealant prevents the first filler from seeping out. In this way, seeping of an adhesive filler can be prevented in the arrangement where a plurality of active-matrix substrates are fixed on the base substrate using the adhesive filler. An electromagnetic wave capturing device according to the present invention uses such a composite active-matrix substrate.