Abstract: Provided are bypass diode assemblies for use in photovoltaic modules. Also provided are methods of fabricating such assemblies and a method of fabricating photovoltaic modules using such assemblies. A diode assembly may include an insulating strip, at least one lead-diode assembly having a diode and two leads, and at least two interconnecting conductors overlapping with and electrically contacting the leads of the lead-diode assembly. The insulating strip supports the lead-diode assembly and conductors and at least partially insulates these components from photovoltaic cells. Specifically, during module fabrication, the interconnecting conductors make electrical connections to the back sides of the cells through cutouts in the insulating strip. The electrical connections may be made to every cell in a row or a subset of selected cells in that row. In certain embodiments, the same interconnecting conductor is connected to two or more cells positioned in adjacent rows.

Abstract: Provided are bypass diode assemblies for use in photovoltaic modules. Also provided are methods of fabricating such assemblies and a method of fabricating photovoltaic modules using such assemblies. A diode assembly may include an insulating strip, at least one lead-diode assembly having a diode and two leads, and at least two interconnecting conductors overlapping with and electrically contacting the leads of the lead-diode assembly. The insulating strip supports the lead-diode assembly and conductors and at least partially insulates these components from photovoltaic cells. Specifically, during module fabrication, the interconnecting conductors make electrical connections to the back sides of the cells through cutouts in the insulating strip. The electrical connections may be made to every cell in a row or a subset of selected cells in that row. In certain embodiments, the same interconnecting conductor is connected to two or more cells positioned in adjacent rows.

Abstract: Provided herein are methods of scribing a solar cell structure to create isolated solar cells. The methods involve scanning and high frequency dithering of a laser beam across a solar cell structure such that the beam creates a stepped scribed line profile. In certain embodiments, a structure including an absorber layer sandwich between two contact layers is provided. The scanned dithered laser beam ablates all of these layers on one part of the scribe line while the back contact layer on another part of the scribe line, leaving an exposed back contact layer. The scribe electrically isolates solar cell structures on either side of the scribe line from each other, while providing a contact point to the back contact layer of one of solar cell structure for subsequent cell-cell interconnection.

Abstract: Provided herein are methods and systems for scribing solar cell structures to create isolated solar cells. According to various embodiments, the methods involve scanning an excimer laser beam along a scribe line of a solar cell structure to ablate electrically active layers of the structure. A photomask having variable transmittance is disposed between the beam source and the solar cell structure. The transmittance is calibrated to produce variable fluence levels such that a stepped scribed profile is obtained. In certain embodiments, a front contact/absorber/back contact stack is removed along a portion of the scribe line, while a front contact/absorber stack is simultaneously removed along a parallel portion, with the back contact layer unremoved. In this manner, the scribe electrically isolates solar cells on either side of the scribe line, while providing a contact point to the back contact layer of one of the solar cells for subsequent cell-cell interconnection.

Abstract: Provided herein are improved methods of laser scribing photovoltaic structures to form monolithically integrated photovoltaic modules. The methods involve forming P1, P2 or P3 scribes by an ablative scribing mechanism having low melting, and in certain embodiments, substantially no melting. In certain embodiments, the methods involve generating an ablation shockwave at an interface of the film to be removed and the underlying layer. The film is then removed by mechanical shock. According to various embodiments, the ablation shockwave is generated by using a laser beam having a wavelength providing an optical penetration depth on the order of the film thickness and a minimum threshold intensity. In some embodiments, photovoltaic materials can be scribed using picosecond pulse widths and certain wavelength and laser fluence levels.

Abstract: Provided herein are methods of scribing a solar cell structure to create isolated solar cells. The methods involve scanning and high frequency dithering of a laser beam across a solar cell structure such that the beam creates a stepped scribed line profile. In certain embodiments, a structure including an absorber layer sandwich between two contact layers is provided. The scanned dithered laser beam ablates all of these layers on one part of the scribe line while the back contact layer on another part of the scribe line, leaving an exposed back contact layer. The scribe electrically isolates solar cell structures on either side of the scribe line from each other, while providing a contact point to the back contact layer of one of solar cell structure for subsequent cell-cell interconnection.

Abstract: Provided herein are methods and systems for scribing solar cell structures to create isolated solar cells. According to various embodiments, the methods involve scanning an excimer laser beam along a scribe line of a solar cell structure to ablate electrically active layers of the structure. A photomask having variable transmittance is disposed between the beam source and the solar cell structure. The transmittance is calibrated to produce variable fluence levels such that a stepped scribed profile is obtained. In certain embodiments, a front contact/absorber/back contact stack is removed along a portion of the scribe line, while a front contact/absorber stack is simultaneously removed along a parallel portion, with the back contact layer unremoved. In this manner, the scribe electrically isolates solar cells on either side of the scribe line, while providing a contact point to the back contact layer of one of the solar cells for subsequent cell-cell interconnection.

Abstract: Provided are bypass diode assemblies for use in photovoltaic modules. Also provided are methods of fabricating such assemblies and a method of fabricating photovoltaic modules using such assemblies. A diode assembly may include an insulating strip, at least one lead-diode assembly having a diode and two leads, and at least two interconnecting conductors overlapping with and electrically contacting the leads of the lead-diode assembly. The insulating strip supports the lead-diode assembly and conductors and at least partially insulates these components from photovoltaic cells. Specifically, during module fabrication, the interconnecting conductors make electrical connections to the back sides of the cells through cutouts in the insulating strip. The electrical connections may be made to every cell in a row or a subset of selected cells in that row. In certain embodiments, the same interconnecting conductor is connected to two or more cells positioned in adjacent rows.

Abstract: Provided herein are improved methods of laser scribing photovoltaic structures to form monolithically integrated photovoltaic modules. The methods involve forming P1, P2 or P3 scribes by an ablative scribing mechanism having low melting, and in certain embodiments, substantially no melting. In certain embodiments, the methods involve generating an ablation shockwave at an interface of the film to be removed and the underlying layer. The film is then removed by mechanical shock. According to various embodiments, the ablation shockwave is generated by using a laser beam having a wavelength providing an optical penetration depth on the order of the film thickness and a minimum threshold intensity. In one embodiment, material including an absorber layer is scribed using an infrared laser source and a picosecond pulse width.

Abstract: A laser-based technique for rapid etching of a semi-insulating substrate is described wherein a vertically suspended semiconductive sample is placed in an etchant solution. An intermittent laser beam is applied thereto whereby gas bubbles formed during the application of the laser beam to the laser reaction zone are displaced during the dark period of the intermittent laser beam.