Patents by Inventor Otto Chen
Otto Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11996276Abstract: An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.Type: GrantFiled: February 13, 2023Date of Patent: May 28, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Otto Chen, Chi-Ying Wu, Chia-Chih Chen
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Publication number: 20240133489Abstract: A brace clamp includes a first jaw; a second jaw pivotably coupled to the first jaw, wherein a clamp channel is defined between the first jaw and the second jaw, the clamp channel configured to receive a sway brace pipe therethrough; and a clamp fastener coupled to the first jaw; w the brace clamp is configurable in a disengaged configuration and an engaged configuration; and wherein, in the disengaged configuration, the first jaw is pivoted away from the second jaw and the clamp fastener is disengaged from the second jaw, and in the engaged configuration, the first jaw is pivoted towards the second jaw and the clamp fastener is engaged with the second jaw.Type: ApplicationFiled: October 18, 2022Publication date: April 25, 2024Inventors: John Otto Deutsch, Michael A. Budrow, Patrick Chien Chen, Aaron Jonathon Kracke
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Publication number: 20230197424Abstract: An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.Type: ApplicationFiled: February 13, 2023Publication date: June 22, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Otto CHEN, Chi-Ying WU, Chia-Chih CHEN
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Publication number: 20230139777Abstract: The present disclosure describes a wafer cooling/heating system that includes a load-lock and a thermo module. The load-lock uses a level stream design to improve temperature uniformity across one or more wafers during a cooling/heating process. The load-lock can include (i) a wafer holder configured to receive wafers at a front side of the load-lock; (ii) a gas diffuser with one or more nozzles along a back side of the load-lock, a side surface of the load-lock, or a combination thereof; and (iii) one or more exhaust lines. Further, the thermo module can be configured to control a temperature of a gas provided to the load-lock.Type: ApplicationFiled: December 30, 2022Publication date: May 4, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Otto CHEN, Chia-Chih Chen
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Publication number: 20230116329Abstract: A connector assembly includes a housing having a flange along a circumferential direction, the flange has a groove spaced radially from the housing, and a sealing element disposed in the groove and forming a seal between the flange and a panel that has an opening receiving the housing. The sealing element is pressed against the panel when the housing partially passes through the opening of the panel.Type: ApplicationFiled: October 7, 2022Publication date: April 13, 2023Applicant: Tyco Electronics (Shanghai) Co., Ltd.Inventors: Dalei (Otto) Chen, Hongbo (Daniel) Zhang
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Patent number: 11581169Abstract: An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.Type: GrantFiled: December 5, 2019Date of Patent: February 14, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Otto Chen, Chi-Ying Wu, Chia-Chih Chen
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Patent number: 11569099Abstract: The present disclosure describes a wafer cooling/heating system that includes a load-lock and a thermo module. The load-lock uses a level stream design to improve temperature uniformity across one or more wafers during a cooling/heating process. The load-lock can include (i) a wafer holder configured to receive wafers at a front side of the load-lock; (ii) a gas diffuser with one or more nozzles along a back side of the load-lock, a side surface of the load-lock, or a combination thereof; and (iii) one or more exhaust lines. Further, the thermo module can be configured to control a temperature of a gas provided to the load-lock.Type: GrantFiled: December 17, 2020Date of Patent: January 31, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Otto Chen, Chia-Chih Chen
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Publication number: 20220384214Abstract: A semiconductor fabrication facility is provided. The semiconductor fabrication facility includes a processing tool and a transmission assembly. The transmission assembly is connected to the processing tool and comprises a number of transmission lines used to supply electric power or a fluid to the processing tool or remove the fluid or an exhaust gas from the processing tool. The transmission lines includes a first transmission line and a second transmission line. The first transmission line has a first temperature and the second transmission line has a second temperature. The second temperature is higher than the first temperature. The first transmission line and the second transmission line are arranged such that a thermal energy of the second transmission line is able to be transmitted to the first transmission line to change the first temperature of the first transmission line.Type: ApplicationFiled: May 28, 2021Publication date: December 1, 2022Inventors: OTTO CHEN, YING-YEN TSENG, WEN-YU KU, CHIA-CHIH CHEN
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Publication number: 20210104419Abstract: The present disclosure describes a wafer cooling/heating system that includes a load-lock and a thermo module. The load-lock uses a level stream design to improve temperature uniformity across one or more wafers during a cooling/heating process. The load-lock can include (i) a wafer holder configured to receive wafers at a front side of the load-lock; (ii) a gas diffuser with one or more nozzles along a back side of the load-lock, a side surface of the load-lock, or a combination thereof; and (iii) one or more exhaust lines. Further, the thermo module can be configured to control a temperature of a gas provided to the load-lock.Type: ApplicationFiled: December 17, 2020Publication date: April 8, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Otto CHEN, Chia-Chih Chen
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Patent number: 10872789Abstract: The present disclosure describes a wafer cooling/heating system that includes a load-lock and a thermo module. The load-lock uses a level stream design to improve temperature uniformity across one or more wafers during a cooling/heating process. The load-lock can include (i) a wafer holder configured to receive wafers at a front side of the load-lock; (ii) a gas diffuser with one or more nozzles along a back side of the load-lock, a side surface of the load-lock, or a combination thereof; and (iii) one or more exhaust lines. Further, the thermo module can be configured to control a temperature of a gas provided to the load-lock.Type: GrantFiled: September 28, 2017Date of Patent: December 22, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Otto Chen, Chia-Chih Chen
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Publication number: 20200111651Abstract: An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.Type: ApplicationFiled: December 5, 2019Publication date: April 9, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Otto Chen, Chi-Ying Wu, Chia-Chih Chen
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Patent number: 10553411Abstract: An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.Type: GrantFiled: September 10, 2015Date of Patent: February 4, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Otto Chen, Chi-Ying Wu, Chiah-Chih Chen
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Publication number: 20190096713Abstract: The present disclosure describes a wafer cooling/heating system that includes a load-lock and a thermo module. The load-lock uses a level stream design to improve temperature uniformity across one or more wafers during a cooling/heating process. The load-lock can include (i) a wafer holder configured to receive wafers at a front side of the load-lock; (ii) a gas diffuser with one or more nozzles along a back side of the load-lock, a side surface of the load-lock, or a combination thereof; and (iii) one or more exhaust lines. Further, the thermo module can be configured to control a temperature of a gas provided to the load-lock.Type: ApplicationFiled: September 28, 2017Publication date: March 28, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Otto CHEN, Chia-Chih CHEN
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Publication number: 20170076920Abstract: An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.Type: ApplicationFiled: September 10, 2015Publication date: March 16, 2017Inventors: Otto CHEN, Joseph WU, C.C. CHEN
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Patent number: 7518129Abstract: A method for identifying a drifted dose integrator in an implantation system and an implantation system are provided. The implantation system includes a first dose integrator and a second dose integrator. The first dose integrator includes a first input configured to receive a first current generated from charges carried by implanted ions in a wafer, and a first output configured to output a first accumulated dosage value. The second dose integrator includes a second dose integrator including a second input configured to receive a second current generated from the charges carried by the implanted ions in the wafer, and a second output configured to output a second accumulated dosage value. The implantation system further includes a processing unit comparing the first accumulated dosage value and the second accumulated dosage value to detect a drift in one of the first and the second dose integrators.Type: GrantFiled: May 3, 2006Date of Patent: April 14, 2009Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jih-Hwa Wang, Otto Chen, Fang-Chi Chien, Tung-Li Lee, Pu-Fang Chen
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Publication number: 20070257210Abstract: A method for identifying a drifted dose integrator in an implantation system and an implantation system are provided. The implantation system includes a first dose integrator and a second dose integrator. The first dose integrator includes a first input configured to receive a first current generated from charges carried by implanted ions in a wafer, and a first output configured to output a first accumulated dosage value. The second dose integrator includes a second dose integrator including a second input configured to receive a second current generated from the charges carried by the implanted ions in the wafer, and a second output configured to output a second accumulated dosage value. The implantation system further includes a processing unit comparing the first accumulated dosage value and the second accumulated dosage value to detect a drift in one of the first and the second dose integrators.Type: ApplicationFiled: May 3, 2006Publication date: November 8, 2007Inventors: Jih-Hwa Wang, Otto Chen, Fang-Chi Chien, Tung-Li Lee, Pu-Fang Chen
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Publication number: 20050133736Abstract: An ion implantation apparatus. An ion implantation chamber has a movable work piece support holding one or more work pieces and a connecting housing between the ion implantation chamber and an accelerator thereof. A plurality of collectors with saw-toothed protrusions are mounted on the interior surface of the ion implantation chamber and the housing, and grounded to fix contaminant particles moving within the ion implantation apparatus.Type: ApplicationFiled: December 17, 2003Publication date: June 23, 2005Inventors: Otto Chen, Yao-Chia Yeh, Chun-Feng Shen, Chung-Tung Chen