Abstract: A bit line voltage regulation circuit achieves uniform program features and precise cell distribution by providing a high voltage to a bit line regardless of a cell state. For this purpose, the regulation circuit includes a boosting unit for generating the high voltage, a switching unit, connected between the boosting unit and the bit line of a memory cell array, for transferring the high voltage to the bit line and an amplifying unit, for detecting a voltage drop at a detection node on the bit line caused by resistance on the bit line, amplifying the detected voltage drop to produce an amplified voltage driving the switching unit.

Abstract: There is disclosed a multi-bit flash memory cell and programming method using the same. In order to solve the problems that the size of a cell per unit is increased, reliability of a device is degraded due to a high operating voltage and a circuit necessary for driving the cell becomes complicated, the multi-bit flash memory cell and programming method using the same according to the present invention stores information of various states, by interchangeably programs a drain and a source in a cell array of virtual ground type, in a structure in which that two types of cells look like connected serially by doping a floating gate in a flash memory cell with two regions of a N type and a P to type.