Abstract: The present invention is directed toward an edge detecting photodiode that includes a waveguide comprising a p-doped InP cladding layer, an n-doped InP cladding layer, a p-side waveguide layer, an n-side waveguide layer, and an InGaAs absorption layer therebetween, in which the absorption layer is doped to have an absorption region and a depletion region that, when under bias, will overlap by an amount sufficient to substantially balance the transit time of positive and negative charged carriers across the waveguide. The photodiode is preferably formed on an InP substrate. The photodiode preferably has a planar polymer layer in contact with the InP substrate. The polymer layer also preferably has a ridge formed therein for the photodiode waveguide. The polymer layer may have a coplanar transmission line deposited thereon, and a pair of metal-insulator-metal (“MIM”) capacitors may be incorporated into the coplanar transmission line.

Abstract: The present invention provides an improved optoelectronic device and a method of manufacture therefor. The optoelectronic device includes a doped buffer layer located over a substrate having an optical window formed therein and an absorber layer located over the doped buffer layer. The optoelectronic device further includes a doped region located over the absorber layer and having a dopant tail that extends substantially through the absorber layer, and the doped buffer layer and the dopant tail are doped to augment an optical power threshold for bandwidth collapse of the optoelectronic device.