Patents by Inventor P. Shiv HALASYAMANI

P. Shiv HALASYAMANI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11262640
    Abstract: A device comprising a nonlinear optical (NLO) material according to the formula XLi2Al4B6O20F. A device comprising a nonlinear optical material (NLO) according to the formula KSrCO3F, wherein the NLO comprises at least one single crystal. A nonlinear optical material selected from the group consisting of KSrCO3F Rb3Ba3Li2Al4B6O20F and K3Sr3Li2Al4B6O20F.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: March 1, 2022
    Assignee: UNIVERSITY OF HOUSTON SYSTEM
    Inventors: P. Shiv Halasyamani, Hongwei Yu, Hongping Wu, Weiguo Zhang
  • Publication number: 20210200058
    Abstract: A device comprising a nonlinear optical (NLO) material according to the formula XLi2Al4B6O20F. A device comprising a nonlinear optical material (NLO) according to the formula KSrCO3F, wherein the NLO comprises at least one single crystal. A nonlinear optical material selected from the group consisting of KSrCO3F Rb3Ba3Li2Al4B6O20F and K3Sr3Li2Al4B6O20F.
    Type: Application
    Filed: March 9, 2018
    Publication date: July 1, 2021
    Applicant: University of Houston System
    Inventors: P. Shiv Halasyamani, Hongwei Yu, Hongping Wu, Weiguo Zhang
  • Patent number: 10409138
    Abstract: Disclosed is a nonlinear optical (NLO) material for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula AqByCz and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba3ZnB5PO14.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: September 10, 2019
    Assignee: UNIVERSITY OF HOUSTON SYSTEM
    Inventors: P. Shiv Halasyamani, Hongwei Yu
  • Publication number: 20190212630
    Abstract: Disclosed is a nonlinear optical (NLO) material for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula AqByCz and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba3ZnB5PO14.
    Type: Application
    Filed: March 19, 2019
    Publication date: July 11, 2019
    Applicant: University of Houston System
    Inventors: P. Shiv Halasyamani, Hongwei Yu
  • Patent number: 10281796
    Abstract: Disclosed is a nonlinear optical (NLO) material for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula AqByCz and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba3ZnB5PO14.
    Type: Grant
    Filed: September 3, 2018
    Date of Patent: May 7, 2019
    Assignee: UNIVERSITY OF HOUSTON SYSTEM
    Inventors: P. Shiv Halasyamani, Hongwei Yu
  • Publication number: 20180373120
    Abstract: Disclosed is a nonlinear optical (NLO) material for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula AqByCz and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba3ZnB5PO14.
    Type: Application
    Filed: September 3, 2018
    Publication date: December 27, 2018
    Applicant: University of Houston System
    Inventors: P. Shiv Halasyamani, Hongwei Yu
  • Patent number: 10133148
    Abstract: Disclosed is a nonlinear optical material (NLO) for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula AqByCz and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba3ZnB5PO14.
    Type: Grant
    Filed: April 13, 2016
    Date of Patent: November 20, 2018
    Assignee: UNIVERSITY OF HOUSTON SYSTEM
    Inventors: P. Shiv Halasyamani, Hongwei Yu
  • Patent number: 10047456
    Abstract: A monolithic crystal having the atomic formula WnXmYpZr, with at least one dimension greater than about 10 mm. A method for top seed, solution growth of a monolithic crystal, wherein the method includes the steps of: preparing a precursor, forming a seed crystal, and forming the monolithic crystal. Some configurations of the method include the differential control of the crystal flux temperature in a furnace and the rotational frequency of a seed crystal in the crystal flux.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: August 14, 2018
    Assignee: UNIVERSITY OF HOUSTON SYSTEM
    Inventors: P. Shiv Halasyamani, Weiguo Zhang
  • Publication number: 20180120671
    Abstract: Disclosed is a nonlinear optical material (NLO) for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula AqByCz and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba3ZnB5PO14.
    Type: Application
    Filed: April 13, 2016
    Publication date: May 3, 2018
    Applicant: University of Houston System
    Inventors: P. Shiv Halasyamani, Hongwei Yu
  • Publication number: 20150252490
    Abstract: A monolithic crystal having the atomic formula WnXmYpZr, with at least one dimension greater than about 10 mm. A method for top seed, solution growth of a monolithic crystal, wherein the method includes the steps of: preparing a precursor, forming a seed crystal, and forming the monolithic crystal. Some configurations of the method include the differential control of the crystal flux temperature in a furnace and the rotational frequency of a seed crystal in the crystal flux.
    Type: Application
    Filed: May 20, 2015
    Publication date: September 10, 2015
    Applicant: University of Houston System
    Inventors: P. Shiv Halasyamani, Weiguo Zhang
  • Patent number: 8999189
    Abstract: A method for synthesis of a ferroelectric material characterized by the general formula AxByFz where A is an alkaline earth metal, B is transition metal or a main group metal, x and y each range from about 1 to about 5, and z ranges from about 1 to about 20 comprising contacting an alkaline earth metal fluoride, a difluorometal compound and a fluoroorganic acid in a medium to form a reaction mixture; and subjecting the reaction mixture to conditions suitable for hydrothermal crystal growth.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: April 7, 2015
    Assignee: University of Houston System
    Inventors: P. Shiv Halasyamani, Hong-Young Chang
  • Publication number: 20110220836
    Abstract: A method for synthesis of a ferroelectric material characterized by the general formula AxByFz where A is an alkaline earth metal, B is transition metal or a main group metal, x and y each range from about 1 to about 5, and z ranges from about 1 to about 20 comprising contacting an alkaline earth metal fluoride, a difluorometal compound and a fluoroorganic acid in a medium to form a reaction mixture; and subjecting the reaction mixture to conditions suitable for hydrothermal crystal growth.
    Type: Application
    Filed: February 28, 2011
    Publication date: September 15, 2011
    Applicant: UNIVERSITY OF HOUSTON SYSTEM
    Inventors: P. Shiv HALASYAMANI, Hong-Young CHANG