Abstract: A method for manufacturing a semiconductor device including a first semiconductor zone optimised for electron conduction and a second semiconductor zone optimised for hole conduction, the method including providing a multilayer structure including a substrate and a silicon-germanium layer disposed on the substrate; defining in the multilayer structure a first region for containing the first semiconductor zone and a second region for containing the second semiconductor zone, and subjecting the multilayer structure to laser annealing so as to modify a portion of the multilayer structure located in the second region, the portion including prior to laser annealing a part of the silicon-germanium layer, the portion having after laser annealing a germanium concentration gradient with a germanium concentration which increases towards an upper face of the portion.

Abstract: A method for manufacturing a semiconductor device including a first semiconductor zone optimised for electron conduction and a second semiconductor zone optimised for hole conduction, the method including providing a multilayer structure including a substrate and a silicon-germanium layer disposed on the substrate; defining in the multilayer structure a first region for containing the first semiconductor zone and a second region for containing the second semiconductor zone; subjecting the multilayer structure to laser annealing so as to modify a portion of the multilayer structure located in the first region, the portion including prior to laser annealing a part of the silicon-germanium layer, the portion including after the laser annealing a germanium-depleted part and a germanium-enriched part disposed on the germanium-depleted part, and etching the germanium-enriched part so as to expose the germanium-depleted part.

Abstract: A method for manufacturing a field effect transistor including a silicon-germanium active layer and a gate oxide layer disposed on the active layer, the method including providing a stack including a substrate and a silicon-germanium first layer disposed on the substrate; forming the gate oxide layer on the stack; subjecting the stack to laser annealing so as to melt a region of the stack, the region including at least one part of the first layer, and recrystallising the molten region of the stack to obtain the silicon-germanium active layer in contact with the gate oxide layer, the active layer having a germanium concentration gradient.

Abstract: The invention relates to a method for producing ohmic contacts, of type including a metal, a semiconductor and tin, including: a) forming a first layer (6), of an alloy of the semiconductor and of tin; b) then, on the first layer, forming a second layer (8), of said metal; c) laser annealing the first layer and the second layer at an energy density between 0.1 and 2 J/cm2.

Abstract: A method for crystallising an amorphous layer included in a stack, extending directly in contact with a crystalline layer of the stack by forming an interface with the crystalline layer, and having a first face opposite the interface, and having a melting threshold EM corresponding to the energy density to be provided to the amorphous layer to achieve its melting, for a thickness Ep of the amorphous layer defined between the first face and the interface, the method including a crystallisation annealing of the amorphous layer by subjecting it, by zones, to laser pulses, and in each zone, the laser pulses are emitted by series, each laser pulse having an energy density EDi different from one series to another so as to maintain the energy density of the pulses of each series below the melting threshold.

Abstract: The invention relates to a method for forming a porous portion in a substrate, an implantation of ions in at least one region of a layer, for example based on a semiconductor material, so as to form a portion enriched with at least one gas in the implanted region, and then a laser annealing of the nanosecond type so as to form a porous portion. The use of the ion implantation makes it possible to dissociate the deposition of the layer based on semiconductor material from the incorporation of gas. A great variety of porous structures can be obtained by the method. These porous structures can be adapted for numerous applications according to the properties sought.

Abstract: Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.

Abstract: A method for transferring a thin layer from a donor substrate to a receiver substrate including the steps of implantation of species carried out in a uniform manner on the whole of the donor substrate to form therein an embrittlement plane which delimits the thin layer and a bulk part of the donor substrate, of placing in contact the donor substrate and the receiver substrate and of initiating and propagating a fracture wave along the embrittlement plane. The method comprises, before the placing in contact, a step of localised reduction of a capacity of the embrittlement plane to initiate the fracture wave. This step of localised reduction may be carried out by means of a localised laser annealing of the donor substrate.

Abstract: An optoelectronic device including a crystalline semiconductor layer based on GeSn and including a pin junction. This formed semiconductor layer includes a base portion; a single-crystal intermediate portion having an average value xpi1 of proportion of tin less than xps1, thus forming a barrier region against charge carriers flowing in an upper portion; and the single-crystal upper portion including a homogeneous medium with a proportion of tin xps1, and vertical structures having an average value xps2 of proportion of tin greater than xps1, thus forming regions for emitting or for receiving infrared radiation.

Abstract: A production method for a semi-conductor-on-insulator type multilayer stack includes ion implantation in a buried portion of a superficial layer of a support substrate, so as to form a layer enriched with at least one gas, intended to form a porous semi-conductive material layer, the thermal oxidation of a superficial portion of the superficial layer to form an oxide layer extending from the surface of the support substrate, the oxidation and the implantation of ions being arranged such that the oxide layer and the enriched layer are juxtaposed, and the assembly of the support substrate and of a donor substrate.

Abstract: The invention relates to a method of healing defects related to implantation of species in a donor substrate (1) made of a semiconducting material to form therein a plane of weakness (5) in it separating a thin layer (4) from a bulk part of the donor substrate. The method comprises a superficial amorphisation of the thin layer, followed by application of a heat treatment on the superficially amorphised thin layer. The method comprises application of laser annealing to the superficially amorphised thin layer after the heat treatment, to recrystallise it in the solid phase.

Abstract: A method for manufacturing a semiconductor-on-insulator type substrate for radiofrequency applications is provided, including the steps of: directly bonding a support substrate of a single crystal material and a donor substrate including a thin layer of a semiconductor material, one or more layers of dielectric material being at a bonding interface thereof; transferring the thin layer onto the support substrate; and forming an electric charge trap region in the support substrate in contact with the one or more layers of the dielectric material present at the bonding interface, by transforming a buried zone of the support substrate into a polycrystal.

Abstract: A method for modifying a strain state of at least one semiconductor layer includes providing a support over which is arranged at least one stack of layers including the semiconductor layer and a fusible layer, arranged between the semiconductor layer and the support. The method also includes melting at least one portion of the fusible layer the passage of said at least one portion of the fusible layer from a solid state into a liquid state, the semiconductor layer remaining in the solid state during the melting step. A laser beam may be used for the melting. The melting with the laser beam may also cause the modification of the strain state of the semiconductor layer.

Abstract: Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.

Abstract: The invention relates to a method for producing ohmic contacts, of type including a metal, a semiconductor and tin, including: a) forming a first layer (6), of an alloy of the semiconductor and of tin; b) then, on the first layer, forming a second layer (8), of said metal; c) laser annealing the first layer and the second layer at an energy density between 0.1 and 2 J/cm2.

Abstract: A method of healing defects generated in a semiconducting layer by implantation of species made in a substrate to form therein an embrittlement plane separating a solid part of the substrate from the semiconducting layer, the semiconducting layer having a front face through which the implanted species pass. The method comprises local annealing of the substrate causing heating of the semiconducting layer, the intensity of which decreases from the front face towards the embrittlement plane. The local annealing may comprise a laser irradiation of a front surface of the substrate.

Abstract: The invention relates to a method for forming a porous portion in a substrate, an implantation of ions in at least one region of a layer, for example based on a semiconductor material, so as to form a portion enriched with at least one gas in the implanted region, and then a laser annealing of the nanosecond type so as to form a porous portion. The use of the ion implantation makes it possible to dissociate the deposition of the layer based on semiconductor material from the incorporation of gas. A great variety of porous structures can be obtained by the method. These porous structures can be adapted for numerous applications according to the properties sought.

Abstract: A production method for a semi-conductor-on-insulator type multilayer stack includes ion implantation in a buried portion of a superficial layer of a support substrate, so as to form a layer enriched with at least one gas, intended to form a porous semi-conductive material layer, the thermal oxidation of a superficial portion of the superficial layer to form an oxide layer extending from the surface of the support substrate, the oxidation and the implantation of ions being arranged such that the oxide layer and the enriched layer are juxtaposed, and the assembly of the support substrate and of a donor substrate.

Abstract: A method for manufacturing a semiconductor-on-insulator type substrate for radiofrequency applications is provided, including the steps of: directly bonding a support substrate of a single crystal material and a donor substrate including a thin layer of a semiconductor material, one or more layers of dielectric material being at a bonding interface thereof; transferring the thin layer onto the support substrate; and forming an electric charge trap region in the support substrate in contact with the one or more layers of the dielectric material present at the bonding interface, by transforming a buried zone of the support substrate into a polycrystal.

Abstract: The invention relates to a method of healing defects related to implantation of species in a donor substrate (1) made of a semiconducting material to form therein a plane of weakness (5) in it separating a thin layer (4) from a bulk part of the donor substrate. The method comprises a superficial amorphisation of the thin layer, followed by application of a heat treatment on the superficially amorphised thin layer. The method comprises application of laser annealing to the superficially amorphised thin layer after the heat treatment, to recrystallise it in the solid phase.