Abstract: The present application encompasses methods and apparatus for heating a load such as clothes immersed in a medium such as water during a heating period. A method embodiment of the present invention comprises heating the load and medium within an enclosure by subjecting said load and medium to heated air originated from a conventional energy source; and applying heat to said load and medium within the enclosure via an AC electrical field, embodied as a capacitor, originated from an RF power source.

Abstract: The present application encompasses methods and apparatus for heating a load such as clothes immersed in a medium such as water during a heating period. A method embodiment of the present invention comprises heating the load and medium within an enclosure by subjecting said load and medium to heated air originated from a conventional energy source; and applying heat to said load and medium within the enclosure via an AC electrical field, embodied as a capacitor, originated from an RF power source.

Abstract: The present application encompasses methods and apparatus for heating a load such as clothes immersed in a medium such as water during a heating period. A method embodiment of the present invention comprises heating the load and medium within an enclosure by subjecting said load and medium to heated air originated from a conventional energy source; and applying heat to said load and medium within the enclosure via an AC electrical field, embodied as a capacitor, originated from an RF power source.

Abstract: The present application encompasses methods and apparatus for heating a load such as clothes immersed in a medium such as water during a heating period. A method embodiment of the present invention comprises heating the load and medium within an enclosure by subjecting said load and medium to heated air originated from a conventional energy source; and applying heat to said load and medium within the enclosure via an AC electrical field, embodied as a capacitor, originated from an RF power source.

Abstract: A method for RF dielectric heating an object having a variable weight including a medium is provided The method comprises: (A) placing the object having the variable weight including the medium into an enclosure; (B) adding an ionic substance to the medium; (C) initiating a heating process by subjecting the medium including the object to a variable AC electrical field; and (D) controlling the heating process. The method further comprises using an air flow having an ambient temperature, or being heated before getting into the enclosure, to carry away the evaporated medium from the enclosure.

Abstract: A method for heating an object having a variable weight that includes a medium is provided. The method comprises: (A) placing the object having the variable weight including medium into an enclosure; (B) initiating a heating process by subjecting medium including the object having the variable weight to a variable AC electrical field; and (C) controlling the heating process. The object has substantially absorbed medium in a first “cool” state and therefore includes a maximum weight in the first “cool” state due to absorption of medium. The object is substantially free from medium in a second “heated” state due to substantial release of medium from the object, wherein the released medium is evaporated during the heating process. The heating process is completed when the object is substantially transitioned into the second “heated” state. The method further comprises using an air flow having an ambient temperature inside the enclosure to carry away the evaporated medium from the enclosure.

Abstract: A method for heating a medium that includes an object having a variable weight is provided. The method comprises (A) placing medium including an object having variable weight into a variable enclosure having adjustable dimensions; (B) initiating a heating process by subjecting the medium including the object to a variable AC electrical field; (C) substantially continuously measuring an impedance of medium including the object during the heating process; (D) adjusting dimensions of said variable enclosure to optimize the heating process; (E) adjusting parameters of the variable AC electrical field to optimize the heating process; and (F) controlling the heating process.

Abstract: A method for RF dielectric heating an object having a variable weight including a medium is provided The method comprises: (A) placing the object having the variable weight including the medium into an enclosure; (B) adding an ionic substance to the medium; (C) initiating a heating process by subjecting the medium including the object to a variable AC electrical field; and (D) controlling the heating process. The method further comprises using an air flow having an ambient temperature, or being heated before getting into the enclosure, to carry away the evaporated medium from the enclosure.

Abstract: A method for heating an object having a variable weight that includes a medium is provided. The method comprises: (A) placing the object having the variable weight including medium into an enclosure; (B) initiating a heating process by subjecting medium including the object having the variable weight to a variable AC electrical field; and (C) controlling the heating process. The object has substantially absorbed medium in a first “cool” state and therefore includes a maximum weight in the first “cool” state due to absorption of medium. The object is substantially free from medium in a second “heated” state due to substantial release of medium from the object, wherein the released medium is evaporated during the heating process. The heating process is completed when the object is substantially transitioned into the second “heated” state. The method further comprises using an air flow having an ambient temperature inside the enclosure to carry away the evaporated medium from the enclosure.

Abstract: A method for heating a medium that includes an object having a variable weight is provided. The method comprises (A) placing medium including an object having variable weight into a variable enclosure having adjustable dimensions; (B) initiating a heating process by subjecting the medium including the object to a variable AC electrical field; (C) substantially continuously measuring an impedance of medium including the object during the heating process; (D) adjusting dimensions of said variable enclosure to optimize the heating process; (E) adjusting parameters of the variable AC electrical field to optimize the heating process; and (F) controlling the heating process.

Abstract: An IGFET device (lateral DMOS transistor) with reduced cell dimensions which is especially suitable for RF and microwave applications, includes a semiconductor substrate having an epitaxial layer with a device formed in a surface of the epitaxial layer. A sinker contact is provided from the surface to the epitaxial layer to the substrate for use in grounding the source region to the grounded substrate. The sinker contact is aligned with the source region and spaced from the width of the channel region whereby lateral diffusion in forming the sinker contact does not adversely affect the pitch of the cell structure. The reduced pitch increases output power and reduces parasitic capacitance whereby the device is well-suited for low side switches and as an RF/microwave power transistor.

Abstract: An IGFET device (lateral DMOS transistor) with reduced cell dimensions which is especially suitable for RF and microwave applications, includes a semiconductor substrate having an epitaxial layer with a device formed in a surface of the epitaxial layer. A sinker contact is provided from the surface to the epitaxial layer to the substrate for use in grounding the source region to the grounded substrate. The sinker contact is aligned with the source region and spaced from the width of the channel region whereby lateral diffusion in forming the sinker contact does not adversely affect the pitch of the cell structure. The reduced pitch increases output power and reduces parasitic capacitance whereby the device is well-suited for low side switches and as an RF/microwave power transistor.

Abstract: An RF power device including a DMOS field effect transistor has increased efficiency and reduced distortion. A capacitor is connected between the gate and source input of the transistor which swamps non-linear variations of the parasitic capacitance (C.sub.GD) between the gate and drain, thereby offsetting the Miller effect of the feedback provided by the MOS transistor parasitic capacitance. The capacitor, the Ciss of the MOS transistor, and the inductance of input leads provide a device input resonant frequency between the input signal fundamental frequency and the first harmonic.

Abstract: Disclosed is a method of improving semiconductor device yield by enhancing photoresist adherence to semiconductor substrates during device fabrication. The surface of a layer, such as silicon oxide of silicon nitride, on a semiconductor substrate is coated with a thin layer of oxygen-reactive metal prior to applying photoresist material thereto. The metal is selected from the group consisting of tungsten, titanium, chromium, and combinations thereof; the thickness of the layer of oxygen-reactive metal is of the order of 50-100 .ANG.. The metal coating facilitates the adhesion of the resist material and reduces undercutting of the layer to be etched.

Abstract: An improved dual metallization process in which self-aligned tungsten contacts are formed to closely-spaced emitter or source sites in RF power silicon devices. Low-resistivity ohmic contacts are made by selectively depositing tungsten on the exposed silicon surfaces as a first metal layer without a photomasking process and after a dielectric layer deposition and via opening process. The metallization process is completed by depositing a second metal or polysilicon layer on the dielectric layer and through vias to selected tungsten contacts. The tungsten combines with doped silicon in the emitter or source regions to form the low-resistivity ohmic contacts without the requirement of a platinum or palladium deposition and siliciding step as in prior art. The tungsten is preferably chemical-vapor-deposited in a two-temperature step when a first few hundred Angstroms of tungsten are grown at a low temperature on the order of 250.degree. C.-350.degree. C.